High-performance metal hard mask process using novel TiN film for 32-nm node Cu interconnect and beyond

2011 ◽  
Author(s):  
Naoki Torazawa ◽  
Toru Hinomura ◽  
Takeshi Harada ◽  
Tatsuya Kabe ◽  
Daisuke Inagaki ◽  
...  
Keyword(s):  
High Performance ◽  
Hard Mask ◽  
Tin Film ◽  
Cu Interconnect

High-Performance Metal Hard Mask Process Using Fiber-Textured TiN Film for Cu Interconnects

2016 ◽  
Vol 5 (9) ◽  
pp. P489-P494 ◽  
Author(s):  
Naoki Torazawa ◽  
Takeshi Harada ◽  
Tatsuya Kabe ◽  
Daisuke Inagaki ◽  
Yasunori Morinaga ◽  
...  
Keyword(s):  
High Performance ◽  
Hard Mask ◽  
Cu Interconnects ◽  
Tin Film

scholarly journals Copper-graphene heterostructure for back-end-of-line compatible high-performance interconnects

2021 ◽  
Vol 5 (1) ◽  
Author(s):  
Myungwoo Son ◽  
Jaewon Jang ◽  
Yongsu Lee ◽  
Jungtae Nam ◽  
Jun Yeon Hwang ◽  
...  
Keyword(s):  
High Performance ◽  
Direct Synthesis ◽  
Chemical Vapor ◽  
Multilayer Graphene ◽  
Time To Failure ◽  
Practical Applications ◽  
Cu Interconnects ◽  
Pressure Chemical ◽  
Cu Interconnect ◽  
Pure Cu

AbstractHere, we demonstrate the fabrication of a Cu-graphene heterostructure interconnect by the direct synthesis of graphene on a Cu interconnect with an enhanced performance. Multilayer graphene films were synthesized on Cu interconnect patterns using a liquid benzene or pyridine source at 400 °C by atmospheric pressure chemical vapor deposition (APCVD). The graphene-capped Cu interconnects showed lower resistivity, higher breakdown current density, and improved reliability compared with those of pure Cu interconnects. In addition, an increase in the carrier density of graphene by doping drastically enhanced the reliability of the graphene-capped interconnect with a mean time to failure of >106 s at 100 °C under a continuous DC stress of 3 MA cm−2. Furthermore, the graphene-capped Cu heterostructure exhibited enhanced electrical properties and reliability even if it was a damascene-patterned structure, which indicates compatibility with practical applications such as next-generation interconnect materials in CMOS back-end-of-line (BEOL).

High-Performance Extremely Low-k Film Integration Technology with Metal Hard Mask Process for Cu Interconnects

2016 ◽  
Vol 5 (10) ◽  
pp. P578-P583 ◽  
Author(s):  
Naoki Torazawa ◽  
Susumu Matsumoto ◽  
Takeshi Harada ◽  
Yasunori Morinaga ◽  
Daisuke Inagaki ◽  
...  
Keyword(s):  
High Performance ◽  
Hard Mask ◽  
Integration Technology ◽  
Cu Interconnects ◽  
Low K

Development of Robust Batch-Fabrication Process for High Performance SThM Probe and Quantitative Performance Evaluation

2009 ◽  
Author(s):  
Kwangseok Hwang ◽  
Kyeongtae Kim ◽  
Jaehoon Chung ◽  
Ohmyoung Kwon ◽  
Byeonghee Lee ◽  
...  
Keyword(s):  
High Performance ◽  
Synergistic Effects ◽  
Fabrication Process ◽  
High Yield ◽  
High Concentration ◽  
Crystal Surfaces ◽  
Hard Mask ◽  
Batch Fabrication ◽  
Key Steps ◽  
Tip Radius

To guarantee the reproducibility, uniformity and high yield of the fabrication results even with the unavoidable disturbances during the process, the robustness of the batch fabrication process of SThM probes has been improved. First, the shape of the hard mask used for the anisotropic tip etching was redesigned to fit to certain crystal surfaces of silicon wafer so that the sharpness of the tip is kept for a while even after the hard mask falls apart during the bulk tip etch process. Second, the aspect ratio of the tip was maximized by utilizing high concentration KOH solution. Third, the uniformity of etch rate across the wafer was improved by using ultrasonic bath during the anisotropic wet tip etching step. Through the synergistic effects of the modifications of the key steps, the tip fabrication process has become very robust and uniform. Taking advantage of the robustness of the process, we reduced the tip radius of the SThM probe down to 50 nm and the diameter of the thermocouple junction located at the end of the tip to 100 nm. As a result, the sensitivity and the spatial resolution of the new probe were demonstrated to be improved more than two times.

Conversion of a Patterned Organic Resist into a High Performance Inorganic Hard Mask for High Resolution Pattern Transfer

ACS Nano ◽  
2018 ◽  
Vol 12 (11) ◽  
pp. 11152-11160 ◽  
Author(s):  
Jean-François de Marneffe ◽  
Boon Teik Chan ◽  
Martin Spieser ◽  
Guy Vereecke ◽  
Sergej Naumov ◽  
...  
Keyword(s):  
High Resolution ◽  
High Performance ◽  
Pattern Transfer ◽  
Hard Mask
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