High-Performance Extremely Low-k Film Integration Technology with Metal Hard Mask Process for Cu Interconnects

2016 ◽  
Vol 5 (10) ◽  
pp. P578-P583 ◽  
Author(s):  
Naoki Torazawa ◽  
Susumu Matsumoto ◽  
Takeshi Harada ◽  
Yasunori Morinaga ◽  
Daisuke Inagaki ◽  
...  
Keyword(s):  
High Performance ◽  
Hard Mask ◽  
Integration Technology ◽  
Cu Interconnects ◽  
Low K

High-Performance Metal Hard Mask Process Using Fiber-Textured TiN Film for Cu Interconnects

2016 ◽  
Vol 5 (9) ◽  
pp. P489-P494 ◽  
Author(s):  
Naoki Torazawa ◽  
Takeshi Harada ◽  
Tatsuya Kabe ◽  
Daisuke Inagaki ◽  
Yasunori Morinaga ◽  
...  
Keyword(s):  
High Performance ◽  
Hard Mask ◽  
Cu Interconnects ◽  
Tin Film

scholarly journals Copper-graphene heterostructure for back-end-of-line compatible high-performance interconnects

2021 ◽  
Vol 5 (1) ◽  
Author(s):  
Myungwoo Son ◽  
Jaewon Jang ◽  
Yongsu Lee ◽  
Jungtae Nam ◽  
Jun Yeon Hwang ◽  
...  
Keyword(s):  
High Performance ◽  
Direct Synthesis ◽  
Chemical Vapor ◽  
Multilayer Graphene ◽  
Time To Failure ◽  
Practical Applications ◽  
Cu Interconnects ◽  
Pressure Chemical ◽  
Cu Interconnect ◽  
Pure Cu

AbstractHere, we demonstrate the fabrication of a Cu-graphene heterostructure interconnect by the direct synthesis of graphene on a Cu interconnect with an enhanced performance. Multilayer graphene films were synthesized on Cu interconnect patterns using a liquid benzene or pyridine source at 400 °C by atmospheric pressure chemical vapor deposition (APCVD). The graphene-capped Cu interconnects showed lower resistivity, higher breakdown current density, and improved reliability compared with those of pure Cu interconnects. In addition, an increase in the carrier density of graphene by doping drastically enhanced the reliability of the graphene-capped interconnect with a mean time to failure of >106 s at 100 °C under a continuous DC stress of 3 MA cm−2. Furthermore, the graphene-capped Cu heterostructure exhibited enhanced electrical properties and reliability even if it was a damascene-patterned structure, which indicates compatibility with practical applications such as next-generation interconnect materials in CMOS back-end-of-line (BEOL).

Electromigration failure mode concerning negative resistance shift of Cu interconnects buried in porous low-k dielectric

2017 ◽  
Vol 110 (8) ◽  
pp. 083502 ◽  
Author(s):  
Hui Zheng ◽  
Binfeng Yin ◽  
Hewei Yu ◽  
Leigang Chen ◽  
Lin Gao ◽  
...  
Keyword(s):  
Failure Mode ◽  
Negative Resistance ◽  
Cu Interconnects ◽  
Low K

High-performance intrinsic low-k polymer via the synergistic effect of its three units: adamantyl, perfluorocyclobutylidene and benzocyclobutene

RSC Advances ◽  
2016 ◽  
Vol 6 (73) ◽  
pp. 68560-68567 ◽  
Author(s):  
Lingqiang Kong ◽  
Tianke Qi ◽  
Zhidong Ren ◽  
Yunxia Jin ◽  
Yan Li ◽  
...  
Keyword(s):  
Synergistic Effect ◽  
High Performance ◽  
Low K

Intrinsic highly cross-linked low-k benzocyclobutene polymer functionalized with adamantyl and perfluorocyclobutylidene.

Sign in / Sign up

Export Citation Format

Share Document