Effect of CH4 plasma on porous dielectric modification & pore sealing for advanced interconnect technology nodes

2006 ◽  
Author(s):  
M. Aimadeddine ◽  
V. Arnal ◽  
R. Roy ◽  
A. Farcy ◽  
T. David ◽  
...  
Keyword(s):  
Pore Sealing ◽  
Technology Nodes ◽  
Interconnect Technology

scholarly journals Failure Localization Techniques for 7nm & 16nm Process Nodes in Monolithic & 2.5D SSIT Package Technology Using OBIRCH, LVP and Advance Die Thinning Method

2021 ◽  
Author(s):  
Daniel Nuez ◽  
Phoumra Tan ◽  
Daisy Lu ◽  
Benhai Zhang ◽  
Joshua Miller ◽  
...  
Keyword(s):  
Spatial Resolution ◽  
High Performance ◽  
Semiconductor Industry ◽  
Diagnostic Techniques ◽  
Diagnostic Equipment ◽  
Technology Nodes ◽  
Thinning Process ◽  
Interconnect Technology ◽  
Preparation Techniques ◽  
Failure Localization

Abstract High performance IC's have driven the semiconductor industry towards the sub-nanometer technology nodes for several years. At 16nm and beyond, the spatial resolution and sensitivity of some diagnostic equipment used for failure analysis have reached certain limitations. The accuracy of isolating a faulty signal in a tightly packed group of transistors in a die becomes more challenging. However, with the improvement of SIL (Solid Immersion Lens) based lens technology with higher N.A. (Numeric Aperture), combined with precision die thinning process, allowed some very promising results. This paper demonstrates successful diagnostic techniques utilizing the SIL lens and a variety of die thinning preparation techniques on 7nm and 16nm process nodes in both monolithic and 2.5D SSIT (Stacked Silicon Interconnect Technology) packages.

Dual Damascene Process for FatWires in Copper/FSG Technology

2003 ◽  
Vol 766 ◽  
Author(s):  
J. Gambino ◽  
T. Stamper ◽  
H. Trombley ◽  
S. Luce ◽  
F. Allen ◽  
...  
Keyword(s):  
Line Width ◽  
Lower Cost ◽  
Process Window ◽  
Cmos Process ◽  
Dual Damascene ◽  
Damascene Process ◽  
Interconnect Technology

AbstractA trench-first dual damascene process has been developed for fat wires (1.26 μm pitch, 1.1 μm thickness) in a 0.18 μm CMOS process with copper/fluorosilicate glass (FSG) interconnect technology. The process window for the patterning of vias in such deep trenches depends on the trench depth and on the line width of the trench, with the worse case being an intermediate line width (lines that are 3X the via diameter). Compared to a single damascene process, the dual damascene process has comparable yield and reliability, with lower via resistance and lower cost.

Low-Dielectric-Constant Materials for ULSI Interlayer-Dielectric Applications

MRS Bulletin ◽  
1997 ◽  
Vol 22 (10) ◽  
pp. 19-27 ◽  
Author(s):  
Wei William Lee ◽  
Paul S. Ho
Keyword(s):  
Packing Density ◽  
Propagation Delay ◽  
Single Chip ◽  
Crosstalk Noise ◽  
Metal Line ◽  
Total Delay ◽  
Interlayer Dielectric ◽  
Low Dielectric ◽  
Interconnect Delay ◽  
Interconnect Technology

Continuing improvement of microprocessor performance historically involves a decrease in the device size. This allows greater device speed, an increase in device packing density, and an increase in the number of functions that can reside on a single chip. However higher packing density requires a much larger increase in the number of interconnects. This has led to an increase in the number of wiring levels and a reduction in the wiring pitch (sum of the metal line width and the spacing between the metal lines) to increase the wiring density. The problem with this approach is that—as device dimensions shrink to less than 0.25 μm (transistor gate length)—propagation delay, crosstalk noise, and power dissipation due to resistance-capacitance (RC) coupling become significant due to increased wiring capacitance, especially interline capacitance between the metal lines on the same metal level. The smaller line dimensions increase the resistivity (R) of the metal lines, and the narrower interline spacing increases the capacitance (C) between the lines. Thus although the speed of the device will increase as the feature size decreases, the interconnect delay becomes the major fraction of the total delay and limits improvement in device performance.To address these problems, new materials for use as metal lines and interlayer dielectrics (ILD) as well as alternative architectures have been proposed to replace the current Al(Cu) and SiO2 interconnect technology.

Electrical Characterization of Different Failure Modes in Sub-100 nm Devices Using Nanoprobing Technique

2009 ◽  
Author(s):  
E. Hendarto ◽  
S.L. Toh ◽  
J. Sudijono ◽  
P.K. Tan ◽  
H. Tan ◽  
...  
Keyword(s):  
Electron Microscope ◽  
Focused Ion Beam ◽  
Failure Modes ◽  
Ion Beam ◽  
Electrical Characterization ◽  
Nickel Silicide ◽  
Fault Isolation ◽  
Technology Nodes ◽  
Scanning Electron

Abstract The scanning electron microscope (SEM) based nanoprobing technique has established itself as an indispensable failure analysis (FA) technique as technology nodes continue to shrink according to Moore's Law. Although it has its share of disadvantages, SEM-based nanoprobing is often preferred because of its advantages over other FA techniques such as focused ion beam in fault isolation. This paper presents the effectiveness of the nanoprobing technique in isolating nanoscale defects in three different cases in sub-100 nm devices: soft-fail defect caused by asymmetrical nickel silicide (NiSi) formation, hard-fail defect caused by abnormal NiSi formation leading to contact-poly short, and isolation of resistive contact in a large electrical test structure. Results suggest that the SEM based nanoprobing technique is particularly useful in identifying causes of soft-fails and plays a very important role in investigating the cause of hard-fails and improving device yield.

Dynamic Photon Emission on FinFET Devices Through Novel Scan Test Approaches

2019 ◽  
Author(s):  
Ranganathan Gopinath ◽  
Ravikumar Venkat Krishnan ◽  
Lua Winson ◽  
Phoa Angeline ◽  
Jin Jie
Keyword(s):  
Test Pattern ◽  
Photon Emission ◽  
Pattern Generator ◽  
Lower Probability ◽  
Automated Test Equipment ◽  
Use Patterns ◽  
Infra Red ◽  
Automatic Test Pattern Generator ◽  
Technology Nodes ◽  
Established Technique

Abstract Dynamic Photon Emission Microscopy (D-PEM) is an established technique for isolating short and open failures, where photons emitted by transistors are collected by sensitive infra-red detectors while the device under test is electrically exercised with automated test equipment (ATE). Common tests, such as scan, use patterns that are generated through Automatic Test Pattern Generator (ATPG) in compressed mode. When these patterns are looped for D-PEM, it results in indeterministic states within cells during the load or unload sequences, making interpretation of emission challenging. Moreover, photons are emitted with lower probability and lesser energies for smaller technology nodes such as the FinFET. In this paper, we will discuss executing scan tests in manners that can be used to bring out emission which did not show up in conventional test loops.

SEM-Based Nanoprobing on 40, 32 and 28 nm CMOS Devices Challenges for Semiconductor Failure Analysis

2013 ◽  
Author(s):  
Erik Paul ◽  
Holger Herzog ◽  
Sören Jansen ◽  
Christian Hobert ◽  
Eckhard Langer
Keyword(s):  
Electron Microscope ◽  
High Resolution ◽  
Scanning Electron Microscope ◽  
Failure Analysis ◽  
Case Studies ◽  
State Of The Art ◽  
Root Cause ◽  
Highly Efficient ◽  
Technology Nodes ◽  
Scanning Electron

Abstract This paper presents an effective device-level failure analysis (FA) method which uses a high-resolution low-kV Scanning Electron Microscope (SEM) in combination with an integrated state-of-the-art nanomanipulator to locate and characterize single defects in failing CMOS devices. The presented case studies utilize several FA-techniques in combination with SEM-based nanoprobing for nanometer node technologies and demonstrate how these methods are used to investigate the root cause of IC device failures. The methodology represents a highly-efficient physical failure analysis flow for 28nm and larger technology nodes.

A Sample Preparation on Decapsulation Methodology for Effective Failure Analysis on Thin Small Leadless (TSLP) Flip Chip Package with Copper Pillar (CuP) Bump Interconnect Technology

2014 ◽  
Author(s):  
Gwee Hoon Yen ◽  
Ng Kiong Kay
Keyword(s):  
Sample Preparation ◽  
Failure Analysis ◽  
Flip Chip ◽  
Fault Localization ◽  
Cost Effective ◽  
Fault Isolation ◽  
Voltage Contrast ◽  
Interconnect Technology

Abstract Today, failure analysis involving flip chip [1] with copper pillar bump packaging technologies would be the major challenges faced by analysts. Most often, handling on the chips after destructive chemical decapsulation is extremely critical as there are several failure analysis steps to be continued such as chip level fault localization, chip micro probing for fault isolation, parallel lapping [2, 3, 4] and passive voltage contrast. Therefore, quality of sample preparation is critical. This paper discussed and demonstrated a quick, reliable and cost effective methodology to decapsulate the thin small leadless (TSLP) flip chip package with copper pillar (CuP) bump interconnect technology.

Use of Second Harmonic and Thermal Effects of Laser Voltage Probing for Better Fault Isolation

2016 ◽  
Author(s):  
Ramya Yeluri ◽  
Ravishankar Thirugnanasambandam ◽  
Cameron Wagner ◽  
Jonathan Urtecho ◽  
Jan M. Neirynck
Keyword(s):  
Duty Cycle ◽  
Thermal Effects ◽  
Second Harmonic ◽  
Fault Isolation ◽  
Advanced Technology ◽  
Temperature Dependent ◽  
First Case ◽  
Improve Accuracy ◽  
Degradation Monitoring ◽  
Technology Nodes

Abstract Laser voltage probing (LVP) has been extensively used for fault isolation over the last decade; however fault isolation in practice primarily relies on good-to-bad comparisons. In the case of complex logic failures at advanced technology nodes, understanding the components of the measured data can improve accuracy and speed of fault isolation. This work demonstrates the use of second harmonic and thermal effects of LVP to improve fault isolation with specific examples. In the first case, second harmonic frequency is used to identify duty cycle degradation. Monitoring the relative amplitude of the second harmonic helps identify minute deviations in the duty cycle with a scan over a region, as opposed to collecting multiple high resolution waveforms at each node. This can be used to identify timing degradation such as signal slope variation as well. In the second example, identifying abnormal data at the failing device as temperature dependent effect helps refine the fault isolation further.

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