High accuracy and rapid dose measurements for ultra-low energy ion implantation using low energy x-ray emission spectroscopy

2002 ◽  
Author(s):  
S.F. Corcoran ◽  
C. Hombourger ◽  
P. Staub ◽  
M. Schuhmacher
Keyword(s):  
Ion Implantation ◽  
Emission Spectroscopy ◽  
High Accuracy ◽  
Low Energy ◽  
X Ray ◽  
Dose Measurements

scholarly journals The use of fricke dosimetry for low energy x-rays

2006 ◽  
Vol 49 (spe) ◽  
pp. 17-23 ◽  
Author(s):  
Carlos de Austerlitz ◽  
Viviane Souza ◽  
Heldio Pereira Villar ◽  
Aloisio Cordilha
Keyword(s):  
Ionization Chamber ◽  
Parallel Plate ◽  
Low Energy ◽  
Calibration Factor ◽  
X Rays ◽  
Measuring Systems ◽  
X Ray ◽  
Dose Measurements

The performance of four X-ray qualities generated in a Pantak X-ray machine operating at 30-100 kV was determined with a parallel-plate ionization chamber and a Fricke dosimeter. X-ray qualities used were those recommended by Deutsch Internationale Normung DIN 6809 and dose measurements were carried out with Plexiglas® simulators. Results have shown that the Fricke dosimeter can be used not only for soft X-ray dosimetry, but also for the maintenance of low-energy measuring systems' calibration factor.

X-ray-emission study of the structure of Si:H layers formed by low-energy hydrogen-ion implantation

2002 ◽  
Vol 36 (5) ◽  
pp. 568-573 ◽  
Author(s):  
V. R. Galakhov ◽  
I. V. Antonova ◽  
S. N. Shamin ◽  
V. I. Aksenova ◽  
V. I. Obodnikov ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Low Energy ◽  
Hydrogen Ion ◽  
X Ray ◽  
Emission Study ◽  
Hydrogen Ion Implantation

Soft X-ray emission spectroscopy of low-dimensional SiO2 /Si interfaces after Si+ ion implantation and ion beam mixing

2010 ◽  
Vol 207 (3) ◽  
pp. 743-747 ◽  
Author(s):  
D. A. Zatsepin ◽  
S. Kaschieva ◽  
M. Zier ◽  
B. Schmidt ◽  
H.-J. Fitting
Keyword(s):  
Ion Implantation ◽  
Emission Spectroscopy ◽  
Ion Beam ◽  
Ion Beam Mixing ◽  
X Ray ◽  
Low Dimensional ◽  
Si Ion Implantation

A synthetic diamond probe for low-energy X-ray dose measurements

2007 ◽  
Vol 65 (5) ◽  
pp. 545-552 ◽  
Author(s):  
M. Assiamah ◽  
T.L. Nam ◽  
R.J. Keddy
Keyword(s):  
Synthetic Diamond ◽  
Low Energy ◽  
X Ray ◽  
Dose Measurements ◽  
Diamond Probe

X-Ray Induced Depth Profiling of Ion Implantations into Various Semiconductor Materials

2012 ◽  
Vol 195 ◽  
pp. 274-276 ◽  
Author(s):  
Philipp Hönicke ◽  
Matthias Müller ◽  
Burkhard Beckhoff
Keyword(s):  
Ion Implantation ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Measurement Techniques ◽  
Depth Profiling ◽  
Low Energy ◽  
Semiconductor Materials ◽  
Leakage Currents ◽  
X Ray ◽  
20 Nm

The continuing shrinking of the component dimensions in ULSI technology requires junction depths in the 20-nm regime and below to avoid leakage currents. These ultra shallow dopant distributions can be formed by ultra-low energy (ULE) ion implantation. However, accurate measurement techniques for ultra-shallow dopant profiles are required in order to characterize ULE implantation and the necessary rapid thermal annealing (RTA) processes.

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