Monolithic integration of thermally stable enhancement-mode and depletion-mode InAlAs/InGaAs/InP HEMTs utilizing Ir-gate and Ag-ohmic contact technologies

2006 ◽  
Author(s):  
Weifeng Zhao ◽  
Niu Jin ◽  
Guang Chen ◽  
Liang Wang ◽  
Ilesanmi Adesida
Keyword(s):  
Ohmic Contact ◽  
Monolithic Integration ◽  
Thermally Stable ◽  
Enhancement Mode

Low Ohmic Contact Resistancem-Plane AlGaN/GaN Heterojunction Field-Effect Transistors with Enhancement-Mode Operations

2010 ◽  
Vol 3 (10) ◽  
pp. 101002 ◽  
Author(s):  
Tetsuya Fujiwara ◽  
Stacia Keller ◽  
James S. Speck ◽  
Steven P. DenBaars ◽  
Umesh K. Mishra
Keyword(s):  
Ohmic Contact ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Enhancement Mode ◽  
Heterojunction Field Effect Transistors

Microstructure Analysis of Thermally Stable Ohmic Contact to Both n and p+-GaAs

1992 ◽  
Vol 281 ◽  
Author(s):  
W. Y. Han ◽  
H. S. Lee ◽  
Y. Lu ◽  
M. W. Cole ◽  
L. M. Casas ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Ohmic Contact ◽  
Auger Electron ◽  
Specific Contact Resistance ◽  
Thermally Stable ◽  
Depth Profiles ◽  
Transmission Electron ◽  
Specific Contact ◽  
Electron Spectrometry

ABSTRACTA thermally stable Pd/Ge/Ti/Pt/ ohmic contact with low specific contact resistance was formed on both n and p+-GaAs. The lowest specific contact resistances were 4.7×10−7 and 6.4×10−7 Ω.cm2 for the n and p+-GaAs, respectively, when the n-GaAs was doped with Si to 2×1018cm−3, and the p+-GaAs was doped with carbon to 5×1019 cm−3. Interfacial reactions and element diffusions of the contacts were investigated by using transmission electron microscopy, Auger electron spectrometry with depth profiles. All the contacts were thermally stable at 300 °C for 20 hours, and it appeared that the p-contacts were more stable than the n-contacts.

Thermally stable and nonspiking Pd/Sb(Mn) ohmic contact top‐GaAs

1991 ◽  
Vol 58 (15) ◽  
pp. 1617-1619 ◽  
Author(s):  
C. C. Han ◽  
X. Z. Wang ◽  
S. S. Lau ◽  
R. M. Potemski ◽  
M. A. Tischler ◽  
...  
Keyword(s):  
Ohmic Contact ◽  
Thermally Stable

scholarly journals 200 V Enhancement-Mode p-GaN HEMTs Fabricated on 200 mm GaN-on-SOI With Trench Isolation for Monolithic Integration

2017 ◽  
Vol 38 (7) ◽  
pp. 918-921 ◽  
Author(s):  
Xiangdong Li ◽  
Marleen Van Hove ◽  
Ming Zhao ◽  
Karen Geens ◽  
Vesa-Pekka Lempinen ◽  
...  
Keyword(s):  
Monolithic Integration ◽  
Enhancement Mode ◽  
Trench Isolation ◽  
Gan Hemts

A low-resistance, thermally stable Ohmic contact to n‐GaSb

2005 ◽  
Vol 98 (3) ◽  
pp. 033703 ◽  
Author(s):  
J. A. Robinson ◽  
S. E. Mohney
Keyword(s):  
Ohmic Contact ◽  
Thermally Stable ◽  
Low Resistance

scholarly journals Low-resistance and thermally stable ohmic contact on p-type GaN using Pd/Ni metallization

2001 ◽  
Vol 79 (12) ◽  
pp. 1822-1824 ◽  
Author(s):  
Ho Won Jang ◽  
Ki Hong Kim ◽  
Jong Kyu Kim ◽  
Soon-Won Hwang ◽  
Jung Ja Yang ◽  
...  
Keyword(s):  
Ohmic Contact ◽  
Thermally Stable ◽  
Low Resistance ◽  
P Type

ChemInform Abstract: Design and Characterization of a Thermally Stable Ohmic Contact Metallization on n-GaAs.

ChemInform ◽  
1990 ◽  
Vol 21 (19) ◽  
Author(s):  
R. P. GUPTA ◽  
W. S. KHOKLE ◽  
J. WUERFL ◽  
H. L. HARTNAGEL
Keyword(s):  
Ohmic Contact ◽  
Thermally Stable ◽  
Contact Metallization
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