scholarly journals Low-resistance and thermally stable ohmic contact on p-type GaN using Pd/Ni metallization

2001 ◽  
Vol 79 (12) ◽  
pp. 1822-1824 ◽  
Author(s):  
Ho Won Jang ◽  
Ki Hong Kim ◽  
Jong Kyu Kim ◽  
Soon-Won Hwang ◽  
Jung Ja Yang ◽  
...  
Keyword(s):  
Ohmic Contact ◽  
Thermally Stable ◽  
Low Resistance ◽  
P Type

Thermally Stable, Low Resistance Indium-Based Ohmic Contacts to n and p-Type GaAs

1990 ◽  
Vol 181 ◽  
Author(s):  
Masanori Murakami ◽  
P.-E. Hallali ◽  
W. H. Price ◽  
M. Norcott ◽  
N. Lustig ◽  
...  
Keyword(s):  
Ohmic Contact ◽  
Ohmic Contacts ◽  
Interfacial Microstructure ◽  
Device Fabrication ◽  
Misfit Dislocations ◽  
Thermally Stable ◽  
Excellent Thermal Stability ◽  
Low Resistance ◽  
P Type ◽  
Contact Metal

ABSTRACTRecently, thermally stable, low resistance In-based ohmic contacts to n-type GaAs have been developed in our laboratories by depositing a small amount of In with refractory metals in a conventional evaporator, followed by rapid thermal annealing. By correlating the interfacial microstructure to the electrical properties, InxGa1-xAs phases grown epitaxially on the GaAs were found to be essential for reduction of the contact resistance (Rc). This low resistance was believed to be due to separation of the high barrier (φb) at the metal/GaAs contact into two low barriers at the metal/InxGa1-xAs and InxGa1-xAs/GaAs interfaces. In this paper the effects of the In concentration (x) in the InxGa1-xAs phases and addition of dopants to the contact metal are presented. High In concentration is desirable to reduce the φb at the metal/InxGa1-xAs interface. Such contacts were prepared by sputter-depositing InAs with other contact elements, but the low Rc values were not obtained. The reason was explained to be due to an increase in the φb at the InxGa1-xAs/GaAs interface due to the formation of misfit dislocations. However, addition of a small amount of Si to the contact metals reduced significantly the Rc value. This contact demonstrated excellent thermal stability: no deterioration was observed at 400°C for more than 100 hrs. In addition, the use of this Ni(Si)InW contact metal allowed us to fabricate the low resistance ohmic contacts by one-step (simultaneous) annealing for “implant-activation” and “ohmic contact formation”, which simplifies significantly GaAs device fabrication process steps. For p-type ohmic contacts, low resistance contacts were fabricated by depositing the same NilnW contact material to p-type GaAs. This contact was also thermally stable during subsequent annealing at 400°C. Within our knowledge this is believed to be the first demonstration of low resistance, thermally stable ohmic contact fabrication using the same materials for both n and p-type GaAs.

A low-resistance, thermally stable Ohmic contact to n‐GaSb

2005 ◽  
Vol 98 (3) ◽  
pp. 033703 ◽  
Author(s):  
J. A. Robinson ◽  
S. E. Mohney
Keyword(s):  
Ohmic Contact ◽  
Thermally Stable ◽  
Low Resistance

scholarly journals Low resistance Ohmic contact to p-type crystalline silicon via nitrogen-doped copper oxide films

2016 ◽  
Vol 109 (5) ◽  
pp. 052102 ◽  
Author(s):  
Xinyu Zhang ◽  
Yimao Wan ◽  
James Bullock ◽  
Thomas Allen ◽  
Andres Cuevas
Keyword(s):  
Copper Oxide ◽  
Ohmic Contact ◽  
Crystalline Silicon ◽  
Oxide Films ◽  
Nitrogen Doped ◽  
Low Resistance ◽  
P Type

Low resistance ohmic contact for p‐type ZnTe using Au electrode

1995 ◽  
Vol 67 (9) ◽  
pp. 1277-1279 ◽  
Author(s):  
Takeo Ohtsuka ◽  
Masashi Yoshimura ◽  
Katsuhiko Morita ◽  
Masataka Koyama ◽  
Takafumi Yao
Keyword(s):  
Ohmic Contact ◽  
Au Electrode ◽  
Low Resistance ◽  
P Type

Improved Low Resistance Contacts of Ni/Au and Pd/Au to P-Type GaN Using a Cryogenic Treatment

1999 ◽  
Vol 595 ◽  
Author(s):  
Mi-Ran Park ◽  
Wayne A. Anderson ◽  
Seong-Ju Park
Keyword(s):  
Contact Resistance ◽  
Ohmic Contact ◽  
Cryogenic Treatment ◽  
Microstructural Analysis ◽  
Chemical Vapor ◽  
Specific Contact Resistance ◽  
Mixed Gas ◽  
Low Resistance ◽  
Specific Contact ◽  
P Type

AbstractA low resistance Ohmic contact to p-type GaN is essential for reliable operation of electronic and optoelectronic devices. Such contacts have been made using Ni/Au and Pd / Au contacts to p-type Mg-doped GaN (1.41×1017 cm−3) grown by metalorganic chemical vapor deposition ( MOCVD ) on ( 0001 ) sapphire substrates. Thermal evaporation was used for the deposition of those metals followed by annealing at temperatures of 400 ∼ 700 °C in an oxygen and nitrogen mixed gas ambient, then subsequently cooled in liquid nitrogen which reduced the specific contact resistance from the range of 9.46∼2.80×10−2 ωcm2 to 9.84∼2.65×10−4 ωcm2 for Ni/Au and from the range of 8.35∼5.01×10−4 ωcm2 to 3.34∼1.80×10−4 ωcm2 for Pd/Au. The electrical characteristics for the contacts were examined by the current versus voltage curves and the specific contact resistance was determined by use of the circular transmission line method (c-TLM). The effects of the cryogenic process on improving Ohmic behavior (I-V linearity) and reducing the specific contact resistance will be discussed from a microstructural analysis which reveals the metallurgy of Ohmic contact formation.

Low-resistance and highly transparent Ag/IZO ohmic contact to p-type GaN

2009 ◽  
Vol 517 (14) ◽  
pp. 4039-4042 ◽  
Author(s):  
Han-Ki Kim ◽  
Min-Su Yi ◽  
Sung-Nam Lee
Keyword(s):  
Ohmic Contact ◽  
Low Resistance ◽  
P Type

scholarly journals Improved Low Resistance Contacts of Ni/Au and Pd/Au to p-Type GaN Using a Cryogenic Treatment

2000 ◽  
Vol 5 (S1) ◽  
pp. 901-907
Author(s):  
Mi-Ran Park ◽  
Wayne A. Anderson ◽  
Seong-Ju Park
Keyword(s):  
Contact Resistance ◽  
Ohmic Contact ◽  
Cryogenic Treatment ◽  
Microstructural Analysis ◽  
Chemical Vapor ◽  
Specific Contact Resistance ◽  
Mixed Gas ◽  
Low Resistance ◽  
Specific Contact ◽  
P Type

A low resistance Ohmic contact to p-type GaN is essential for reliable operation of electronic and optoelectronic devices. Such contacts have been made using Ni/Au and Pd / Au contacts to p-type Mg-doped GaN (1.41×1017 cm−3) grown by metalorganic chemical vapor deposition ( MOCVD ) on ( 0001 ) sapphire substrates. Thermal evaporation was used for the deposition of those metals followed by annealing at temperatures of 400 ∼ 700 °C in an oxygen and nitrogen mixed gas ambient, then subsequently cooled in liquid nitrogen which reduced the specific contact resistance from the range of 9.46∼2.80×10−2 Ωcm2 to 9.84∼2.65×10−4 Ωcm2 for Ni/Au and from the range of 8.35∼5.01×10−4 Ωcm2 to 3.34∼1.80×10−4 Ωcm2 for Pd/Au. The electrical characteristics for the contacts were examined by the current versus voltage curves and the specific contact resistance was determined by use of the circular transmission line method (c-TLM). The effects of the cryogenic process on improving Ohmic behavior (I-V linearity) and reducing the specific contact resistance will be discussed from a microstructural analysis which reveals the metallurgy of Ohmic contact formation.

scholarly journals Low Temperature Ni-Al Ohmic Contacts to p-Type 4H-SiC Using Semi-Salicide Processing

2018 ◽  
Vol 924 ◽  
pp. 389-392 ◽  
Author(s):  
Mattias Ekström ◽  
Shuoben Hou ◽  
Hossein Elahipanah ◽  
Arash Salemi ◽  
Mikael Östling ◽  
...  
Keyword(s):  
Low Temperature ◽  
Ohmic Contact ◽  
Thermal Processing ◽  
Ohmic Contacts ◽  
Rapid Thermal Processing ◽  
Nickel Silicide ◽  
Second Step ◽  
Low Resistance ◽  
Annealing Step ◽  
P Type

Most semiconductor devices require low-resistance ohmic contact to p-type doped regions. In this work, we present a semi-salicide process that forms low-resistance contacts (~10-4 Ω cm2) to epitaxially grown p-type (>5×1018 cm-3) 4H-SiC at temperatures as low as 600 °C using rapid thermal processing (RTP). The first step is to self-align the nickel silicide (Ni2Si) at 600 °C. The second step is to deposit aluminium on top of the silicide, pattern it and then perform a second annealing step in the range 500 °C to 700 °C.

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