A low-resistance, thermally stable Ohmic contact to n‐GaSb

2005 ◽  
Vol 98 (3) ◽  
pp. 033703 ◽  
Author(s):  
J. A. Robinson ◽  
S. E. Mohney
Keyword(s):  
Ohmic Contact ◽  
Thermally Stable ◽  
Low Resistance

scholarly journals Low-resistance and thermally stable ohmic contact on p-type GaN using Pd/Ni metallization

2001 ◽  
Vol 79 (12) ◽  
pp. 1822-1824 ◽  
Author(s):  
Ho Won Jang ◽  
Ki Hong Kim ◽  
Jong Kyu Kim ◽  
Soon-Won Hwang ◽  
Jung Ja Yang ◽  
...  
Keyword(s):  
Ohmic Contact ◽  
Thermally Stable ◽  
Low Resistance ◽  
P Type

Thermally Stable, Low Resistance Indium-Based Ohmic Contacts to n and p-Type GaAs

1990 ◽  
Vol 181 ◽  
Author(s):  
Masanori Murakami ◽  
P.-E. Hallali ◽  
W. H. Price ◽  
M. Norcott ◽  
N. Lustig ◽  
...  
Keyword(s):  
Ohmic Contact ◽  
Ohmic Contacts ◽  
Interfacial Microstructure ◽  
Device Fabrication ◽  
Misfit Dislocations ◽  
Thermally Stable ◽  
Excellent Thermal Stability ◽  
Low Resistance ◽  
P Type ◽  
Contact Metal

ABSTRACTRecently, thermally stable, low resistance In-based ohmic contacts to n-type GaAs have been developed in our laboratories by depositing a small amount of In with refractory metals in a conventional evaporator, followed by rapid thermal annealing. By correlating the interfacial microstructure to the electrical properties, InxGa1-xAs phases grown epitaxially on the GaAs were found to be essential for reduction of the contact resistance (Rc). This low resistance was believed to be due to separation of the high barrier (φb) at the metal/GaAs contact into two low barriers at the metal/InxGa1-xAs and InxGa1-xAs/GaAs interfaces. In this paper the effects of the In concentration (x) in the InxGa1-xAs phases and addition of dopants to the contact metal are presented. High In concentration is desirable to reduce the φb at the metal/InxGa1-xAs interface. Such contacts were prepared by sputter-depositing InAs with other contact elements, but the low Rc values were not obtained. The reason was explained to be due to an increase in the φb at the InxGa1-xAs/GaAs interface due to the formation of misfit dislocations. However, addition of a small amount of Si to the contact metals reduced significantly the Rc value. This contact demonstrated excellent thermal stability: no deterioration was observed at 400°C for more than 100 hrs. In addition, the use of this Ni(Si)InW contact metal allowed us to fabricate the low resistance ohmic contacts by one-step (simultaneous) annealing for “implant-activation” and “ohmic contact formation”, which simplifies significantly GaAs device fabrication process steps. For p-type ohmic contacts, low resistance contacts were fabricated by depositing the same NilnW contact material to p-type GaAs. This contact was also thermally stable during subsequent annealing at 400°C. Within our knowledge this is believed to be the first demonstration of low resistance, thermally stable ohmic contact fabrication using the same materials for both n and p-type GaAs.

Low resistance ohmic contact onn‐CdTe

1994 ◽  
Vol 65 (4) ◽  
pp. 475-477 ◽  
Author(s):  
D. Brun ◽  
B. Daudin ◽  
E. Ligeon
Keyword(s):  
Ohmic Contact ◽  
Low Resistance

Development and analysis of low resistance ohmic contact to n-AlGaN/GaN HEMT

2007 ◽  
Vol 16 (2) ◽  
pp. 262-266 ◽  
Author(s):  
A. Soltani ◽  
A. BenMoussa ◽  
S. Touati ◽  
V. Hoël ◽  
J.-C. De Jaeger ◽  
...  
Keyword(s):  
Ohmic Contact ◽  
Low Resistance ◽  
Gan Hemt

Low-Resistance Ohmic Contact Formation by Laser Annealing of N-Implanted 4H-SiC

2020 ◽  
Vol 1004 ◽  
pp. 718-724
Author(s):  
Carsten Hellinger ◽  
Oleg Rusch ◽  
Mathias Rommel ◽  
Anton J. Bauer ◽  
Tobias Erlbacher
Keyword(s):  
Crystal Structure ◽  
Pulse Duration ◽  
Ohmic Contact ◽  
Laser Annealing ◽  
Voltage Drop ◽  
Pulsed Laser ◽  
Electrical Measurements ◽  
Low Resistance ◽  
Contact Formation ◽  
Ohmic Contact Formation

In this work, pulsed-laser-based tempering was applied for post-implant annealing of n-type N-doped 4H-SiC in order to electrically activate the dopants and to rebuild the crystal structure. The annealing was performed by a frequency-tripled Nd:YVO4 laser with a pulse duration of 60 ns. To evaluate the effects of post-implant annealing, JBS diodes were electrically characterized. The results were compared with implanted, not post-annealed JBS diodes. The electrical measurements showed a significant on-state voltage drop of 40 mV at 6 A for post-implant laser annealed diodes compared to not post-implant annealed diodes.

Low resistance ohmic contact to n-GaN with a separate layer method

1997 ◽  
Vol 41 (2) ◽  
pp. 165-168 ◽  
Author(s):  
Y.-F. Wu ◽  
W.-N. Jiang ◽  
B.P. Keller ◽  
S. Keller ◽  
D. Kapolnek ◽  
...  
Keyword(s):  
Ohmic Contact ◽  
Low Resistance ◽  
Layer Method ◽  
Separate Layer

Microstructure Analysis of Thermally Stable Ohmic Contact to Both n and p+-GaAs

1992 ◽  
Vol 281 ◽  
Author(s):  
W. Y. Han ◽  
H. S. Lee ◽  
Y. Lu ◽  
M. W. Cole ◽  
L. M. Casas ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Ohmic Contact ◽  
Auger Electron ◽  
Specific Contact Resistance ◽  
Thermally Stable ◽  
Depth Profiles ◽  
Transmission Electron ◽  
Specific Contact ◽  
Electron Spectrometry

ABSTRACTA thermally stable Pd/Ge/Ti/Pt/ ohmic contact with low specific contact resistance was formed on both n and p+-GaAs. The lowest specific contact resistances were 4.7×10−7 and 6.4×10−7 Ω.cm2 for the n and p+-GaAs, respectively, when the n-GaAs was doped with Si to 2×1018cm−3, and the p+-GaAs was doped with carbon to 5×1019 cm−3. Interfacial reactions and element diffusions of the contacts were investigated by using transmission electron microscopy, Auger electron spectrometry with depth profiles. All the contacts were thermally stable at 300 °C for 20 hours, and it appeared that the p-contacts were more stable than the n-contacts.

Thermally stable and nonspiking Pd/Sb(Mn) ohmic contact top‐GaAs

1991 ◽  
Vol 58 (15) ◽  
pp. 1617-1619 ◽  
Author(s):  
C. C. Han ◽  
X. Z. Wang ◽  
S. S. Lau ◽  
R. M. Potemski ◽  
M. A. Tischler ◽  
...  
Keyword(s):  
Ohmic Contact ◽  
Thermally Stable
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