Accurate measurements for lateral distribution of interface traps by charge pumping and capacitance methods

Proceedings of International Electron Devices Meeting ◽

10.1109/iedm.1995.497178 ◽

2002 ◽

Cited By ~ 4

Author(s):

H. Uchida ◽

K. Fukuda ◽

H. Tanaka ◽

N. Hirashita

Keyword(s):

Lateral Distribution ◽

Interface Traps ◽

Charge Pumping

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Calculation of lateral distribution of interface traps along MIS channel

Electronics Letters ◽

10.1049/el:19910906 ◽

1991 ◽

Vol 27 (16) ◽

pp. 1445 ◽

Cited By ~ 2

Author(s):

A.K. Henning ◽

J.A. Dimauro

Keyword(s):

Lateral Distribution ◽

Interface Traps

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Generation of Hot-Carrier Induced Border and Interface Traps, Investigated by Spectroscopic Charge Pumping

2020 IEEE International Reliability Physics Symposium (IRPS) ◽

10.1109/irps45951.2020.9129513 ◽

2020 ◽

Cited By ~ 1

Author(s):

Bernhard Ruch ◽

Gregor Pobegen ◽

Christian Schleich ◽

Tibor Grasser

Keyword(s):

Interface Traps ◽

Charge Pumping ◽

Hot Carrier

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Comparison between Equilibrium Voltage Step and Charge Pumping Techniques for Characterizing near Si-SiO2 Interface Traps

ECS Meeting Abstracts ◽

10.1149/ma2014-01/36/1393 ◽

2014 ◽

Keyword(s):

Interface Traps ◽

Voltage Step ◽

Charge Pumping

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Lateral distribution of hot-carrier-induced interface traps in MOSFETs

IEEE Transactions on Electron Devices ◽

10.1109/16.8796 ◽

1988 ◽

Vol 35 (12) ◽

pp. 2221-2228 ◽

Cited By ~ 144

Author(s):

M.G. Ancona ◽

N.S. Saks ◽

D. McCarthy

Keyword(s):

Lateral Distribution ◽

Interface Traps ◽

Hot Carrier

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Charge Pumping Current from Single Si/SiO2 Interface Traps: Direct Observation of Pb Centers and Fundamental Trap-Counting by the Charge Pumping Method

10.7567/ssdm.2014.j-2-5l ◽

2014 ◽

Author(s):

T. Tsuchiya ◽

Y. Ono

Keyword(s):

Direct Observation ◽

Interface Traps ◽

Charge Pumping

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Analysis of the energy distribution of interface traps related to tunnel oxide degradation using charge pumping techniques for 3D NAND flash applications

Materials Research Bulletin ◽

10.1016/j.materresbull.2013.05.008 ◽

2013 ◽

Vol 48 (12) ◽

pp. 5084-5087 ◽

Cited By ~ 2

Author(s):

Ho-Myoung An ◽

Hee-Dong Kim ◽

Tae Geun Kim

Keyword(s):

Energy Distribution ◽

Interface Traps ◽

Nand Flash ◽

Charge Pumping ◽

Oxide Degradation

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Detection and characterization of single MOS interface traps by the charge pumping method

2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) ◽

10.1109/imfedk.2016.7521662 ◽

2016 ◽

Author(s):

Toshiaki Tsuchiya

Keyword(s):

Interface Traps ◽

Charge Pumping

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Evolution of capture cross-section of radiation-induced interface traps in MOSFETs as studied by a rapid charge pumping technique

IEEE Transactions on Nuclear Science ◽

10.1109/23.211416 ◽

1992 ◽

Vol 39 (6) ◽

pp. 2152-2157 ◽

Cited By ~ 6

Author(s):

W. Chen ◽

A. Balasinski ◽

T.-P. Ma

Keyword(s):

Cross Section ◽

Capture Cross Section ◽

Interface Traps ◽

Capture Cross ◽

Charge Pumping ◽

Radiation Induced

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Improved charge-pumping method for lateral profiling of interface traps and oxide charge in MOSFET devices

International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318) ◽

10.1109/iedm.1999.823854 ◽

2003 ◽

Cited By ~ 10

Author(s):

A. Melik-Martirosian ◽

T.P. Ma

Keyword(s):

Interface Traps ◽

Oxide Charge ◽

Charge Pumping

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In-Depth Simulation Analysis Of The Si-Sio2 Interface Traps By The Charge Pumping

10.35554/1697-000-010-001 ◽

2015 ◽

pp. 1

Author(s):

M. Sellami ◽

A. Sellami

Keyword(s):

Simulation Analysis ◽

Interface Traps ◽

Charge Pumping

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