Electrical properties of metamorphic In0.52Al0.48As/In0.65Ga0.35As HEMT's on GaAs substrate

2006 ◽  
Author(s):  
Z.J. Qiu ◽  
R. Liu ◽  
S.L. Zhang ◽  
Y.S. Gui ◽  
L.J. Cui ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Gaas Substrate

scholarly journals Investigation of the effects of GaAs substrate orientations on the electrical properties of sulfonated polyaniline based heterostructures

2020 ◽  
Vol 504 ◽  
pp. 144315 ◽  
Author(s):  
Dler Adil Jameel ◽  
John Fredy Ricardo Marroquin ◽  
Mohsin Aziz ◽  
Noor Alhuda Al Saqri ◽  
Inshad Jum'h ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Gaas Substrate ◽  
Sulfonated Polyaniline

MBE growth and electrical properties of InSb film on GaAs substrate

2010 ◽  
Author(s):  
Y. H. Zhang ◽  
P. P. Chen ◽  
T. Lin ◽  
H. Xia ◽  
T. X. Li
Keyword(s):  
Electrical Properties ◽  
Gaas Substrate ◽  
Mbe Growth

Effects of Al2O3cap on the structural and electrical properties of Au/Te/Au contacts on ann‐type GaAs substrate

1993 ◽  
Vol 62 (23) ◽  
pp. 2995-2997 ◽  
Author(s):  
X. W. Lin ◽  
A. Piotrowska ◽  
E. Kaminska ◽  
Z. Liliental‐Weber ◽  
J. Washburn ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Gaas Substrate ◽  
Structural And Electrical Properties

Theoretical Analysis of Electrical Properties of GaAs Substrate-Nanowire P-N Junction

2014 ◽  
Vol 875-877 ◽  
pp. 394-398
Author(s):  
Wen Li Chen ◽  
Xia Zhang ◽  
Xin Yan ◽  
Jun Shuai Li ◽  
Yong Qing Huang ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Computer Aided Design ◽  
Gaas Substrate ◽  
Total Current ◽  
Integrated Devices ◽  
Gaas Nanowire ◽  
Diode Behavior ◽  
Aided Design ◽  
Experimental Researches ◽  
Important Progress

We theoretically analyze the electrical properties of GaAs substrate-nanowire p-n junction using Technology Computer Aided Design (TCAD). The results show that GaAs nanowire-substrate p-n junction exhibits clear diode behavior which has been confirmed in some experiments. Increasing NWs doping concentration and diameter or shortening NWs length can enlarge the total current after the diode is conducted. Total current through p-n junction is approximately linearly proportional to NWs growth density. The substrate-nanowires p-n junction has smaller current than that of substrate-layer p-n junction, which implies the superiority of NW structure. These results constitute an important progress for experimental researches on nanowire-integrated devices.

Effect of GaAs surface pretreatment on electrical properties of MBE-ZnSe/GaAs substrate interfaces

1996 ◽  
Vol 25 (2) ◽  
pp. 245-251 ◽  
Author(s):  
Takayuki Sawada ◽  
Yuji Yamagata ◽  
Kazuaki Imai ◽  
Kazuhiko Suzuki
Keyword(s):  
Electrical Properties ◽  
Gaas Substrate ◽  
Gaas Surface ◽  
Surface Pretreatment

Optical and Electrical Properties of Single‐Crystal GaP Vapor‐Grown on GaAs Substrate

1964 ◽  
Vol 35 (10) ◽  
pp. 2959-2962 ◽  
Author(s):  
Herbert Flicker ◽  
Bernard Goldstein ◽  
Paul‐Andre Hoss
Keyword(s):  
Electrical Properties ◽  
Single Crystal ◽  
Gaas Substrate ◽  
Optical And Electrical Properties

Effects of interfacial sulfidization and thermal annealing on the electrical properties of an atomic-layer-deposited Al2O3 gate dielectric on GaAs substrate

2008 ◽  
Vol 103 (7) ◽  
pp. 074102 ◽  
Author(s):  
Chao-Ching Cheng ◽  
Chao-Hsin Chien ◽  
Guang-Li Luo ◽  
Chun-Hui Yang ◽  
Ching-Chih Chang ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Thermal Annealing ◽  
Gaas Substrate ◽  
Gate Dielectric ◽  
Atomic Layer ◽  
Al2o3 Gate Dielectric

Surface treatment and electrical properties of directly wafer-bonded InP epilayer on GaAs substrate

2002 ◽  
Vol 46 (8) ◽  
pp. 1103-1108 ◽  
Author(s):  
R.H Horng ◽  
W.C Peng ◽  
D.S Wuu ◽  
W.J Ho ◽  
Y.S Huang
Keyword(s):  
Electrical Properties ◽  
Surface Treatment ◽  
Gaas Substrate
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