Effect of GaAs surface pretreatment on electrical properties of MBE-ZnSe/GaAs substrate interfaces

1996 ◽  
Vol 25 (2) ◽  
pp. 245-251 ◽  
Author(s):  
Takayuki Sawada ◽  
Yuji Yamagata ◽  
Kazuaki Imai ◽  
Kazuhiko Suzuki
Keyword(s):  
Electrical Properties ◽  
Gaas Substrate ◽  
Gaas Surface ◽  
Surface Pretreatment

scholarly journals Investigation of the effects of GaAs substrate orientations on the electrical properties of sulfonated polyaniline based heterostructures

2020 ◽  
Vol 504 ◽  
pp. 144315 ◽  
Author(s):  
Dler Adil Jameel ◽  
John Fredy Ricardo Marroquin ◽  
Mohsin Aziz ◽  
Noor Alhuda Al Saqri ◽  
Inshad Jum'h ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Gaas Substrate ◽  
Sulfonated Polyaniline

MBE growth and electrical properties of InSb film on GaAs substrate

2010 ◽  
Author(s):  
Y. H. Zhang ◽  
P. P. Chen ◽  
T. Lin ◽  
H. Xia ◽  
T. X. Li
Keyword(s):  
Electrical Properties ◽  
Gaas Substrate ◽  
Mbe Growth

Passivation of Si and SiGe/Si Structures with 1-Octadecene Monolayers

2007 ◽  
Vol 131-133 ◽  
pp. 83-88
Author(s):  
I.V. Antonova ◽  
M.B. Gulyaev ◽  
R.A. Soots ◽  
V.A. Seleznev ◽  
V.Ya. Prinz
Keyword(s):  
Electrical Properties ◽  
Surface Charge ◽  
Silicon Surface ◽  
Deposition Time ◽  
High Conductivity ◽  
Illumination Intensity ◽  
Surface Layers ◽  
Near Surface ◽  
Surface Pretreatment ◽  
Layer Deposition

The electrical properties of structures included 1-octadecene (CnH2n, n=18) monolayers deposed onto the oxide-free silicon surface or Si/SiGe/Si layers were analyzed as a function of surface pretreatment (hydrogen- or iodine-terminated silicon surface) and layer deposition regime (thermal- or photo-activated process). Two types of traps (for electrons and holes) were found at the interface between the monolayers and substrate. The density of traps was shown to depend on the, H- or I-termination of the silicon surface, the illumination intensity and deposition time during photo-activated deposition, and the temperature of thermal-activated deposition. The optimal regimes can be chosen for minimization of the surface charge in the structures covered with 1- octadecene monolayers, which provides a high conductivity of thin near-surface layers.

Effects of Al2O3cap on the structural and electrical properties of Au/Te/Au contacts on ann‐type GaAs substrate

1993 ◽  
Vol 62 (23) ◽  
pp. 2995-2997 ◽  
Author(s):  
X. W. Lin ◽  
A. Piotrowska ◽  
E. Kaminska ◽  
Z. Liliental‐Weber ◽  
J. Washburn ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Gaas Substrate ◽  
Structural And Electrical Properties

Effects of GaAs Surface Pretreatment and Post-Growth Annealing on Interface Properties of MBE-ZnSe/GaAs(Sub.) System

1995 ◽  
Author(s):  
Yuji YAMAGATA ◽  
Takayuki SAWADA ◽  
Kazuaki IMAI ◽  
Isao TSUBONO ◽  
Kazuhiko SUZUKI
Keyword(s):  
Gaas Surface ◽  
Interface Properties ◽  
Surface Pretreatment
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