MBE growth and electrical properties of InSb film on GaAs substrate

Improvement in Electrical Properties of A1/La2O3/ZrO2/ Gate Stack Deposited on LaON Passivated GaAs Substrate

2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) ◽

10.1109/edtm47692.2020.9117895 ◽

2020 ◽

Author(s):

Viral N. Barhate ◽

Khushabu S. Agrawal ◽

Vilas S. Patil ◽

Ashok M. Mahajan

Keyword(s):

Electrical Properties ◽

Gaas Substrate ◽

Gate Stack

Download Full-text

Investigation of the effects of GaAs substrate orientations on the electrical properties of sulfonated polyaniline based heterostructures

Applied Surface Science ◽

10.1016/j.apsusc.2019.144315 ◽

2020 ◽

Vol 504 ◽

pp. 144315 ◽

Cited By ~ 1

Author(s):

Dler Adil Jameel ◽

John Fredy Ricardo Marroquin ◽

Mohsin Aziz ◽

Noor Alhuda Al Saqri ◽

Inshad Jum'h ◽

...

Keyword(s):

Electrical Properties ◽

Gaas Substrate ◽

Sulfonated Polyaniline

Download Full-text

Relationship of MBE growth parameters with the electrical properties of thin (100) InAs epilayers

Journal of Physics D Applied Physics ◽

10.1088/0022-3727/12/9/023 ◽

1979 ◽

Vol 12 (9) ◽

pp. 1601-1612 ◽

Cited By ~ 20

Author(s):

J D Grange ◽

E H C Parker ◽

R M King

Keyword(s):

Electrical Properties ◽

Growth Parameters ◽

Mbe Growth ◽

Relationship Of

Download Full-text

Influence of MBE growth modes and conditions on spontaneous formation of metallic In nanoparticles and electrical properties of InN matrix

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2017.09.010 ◽

2017 ◽

Vol 478 ◽

pp. 216-219 ◽

Cited By ~ 2

Author(s):

T.A. Komissarova ◽

P. Wang ◽

P. Paturi ◽

X. Wang ◽

S.V. Ivanov

Keyword(s):

Electrical Properties ◽

Mbe Growth ◽

Spontaneous Formation ◽

Growth Modes

Download Full-text

Effects of Al2O3cap on the structural and electrical properties of Au/Te/Au contacts on ann‐type GaAs substrate

Applied Physics Letters ◽

10.1063/1.109168 ◽

1993 ◽

Vol 62 (23) ◽

pp. 2995-2997 ◽

Cited By ~ 4

Author(s):

X. W. Lin ◽

A. Piotrowska ◽

E. Kaminska ◽

Z. Liliental‐Weber ◽

J. Washburn ◽

...

Keyword(s):

Electrical Properties ◽

Gaas Substrate ◽

Structural And Electrical Properties

Download Full-text

Theory of Ga, N and H terminated GaN (0001)/(0001) surfaces

MRS Proceedings ◽

10.1557/proc-482-935 ◽

1997 ◽

Vol 482 ◽

Cited By ~ 3

Author(s):

J. Eisner ◽

M. Haugk ◽

R. Gutierrez ◽

Th. Frauenheim

Keyword(s):

Electrical Properties ◽

Theoretical Study ◽

Growth Conditions ◽

Mbe Growth ◽

Atomic Structures ◽

Mocvd Growth ◽

Formation Energies

AbstractWe present a theoretical study of atomic structures, electrical properties and formation energies for a variety of possible reconstructions with 1×1 and 2×2 periodicity of the GaN(0001) and (0001) surfaces. We find that during MBE growth in the (0001) direction 2×2 structures become stable under N rich growth conditions while Ga rich environment should yield structures with 1×1 periodicity. Considering MBE growth on (0001) surfaces, among the investigated structures only those with 1×1 periodicity are predicted to be stable. During MOCVD growth, where H terminated surfaces may occur, only structures with lx1 periodicity are found to be stable for both growth directions.

Download Full-text