Gate-leakage model of Ge MOS capacitor with high-k gate dielectric

2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings ◽

10.1109/icsict.2006.306293 ◽

2006 ◽

Cited By ~ 1

Author(s):

Xiao Zou ◽

Jing-ping Xu ◽

P. Lai ◽

Chun-xia Li ◽

Xue-feng Zhang

Keyword(s):

Gate Dielectric ◽

Gate Leakage ◽

Mos Capacitor ◽

Leakage Model ◽

High K ◽

High K Gate Dielectric

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Gate leakage properties of MOS devices with tri-layer high-k gate dielectric

Microelectronics Reliability ◽

10.1016/j.microrel.2006.06.002 ◽

2007 ◽

Vol 47 (6) ◽

pp. 937-943 ◽

Cited By ~ 7

Author(s):

W.B. Chen ◽

J.P. Xu ◽

P.T. Lai ◽

Y.P. Li ◽

S.G. Xu

Keyword(s):

Gate Dielectric ◽

Gate Leakage ◽

Mos Devices ◽

High K ◽

High K Gate Dielectric

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A low gate leakage current and small equivalent oxide thickness MOSFET with Ti/HfO2 high-k gate dielectric

Microelectronic Engineering ◽

10.1016/j.mee.2011.03.073 ◽

2011 ◽

Vol 88 (7) ◽

pp. 1309-1311 ◽

Cited By ~ 18

Author(s):

C.H. Fu ◽

K.S. Chang-Liao ◽

Y.A. Chang ◽

Y.Y. Hsu ◽

T.H. Tzeng ◽

...

Keyword(s):

Leakage Current ◽

Gate Dielectric ◽

Oxide Thickness ◽

Gate Leakage Current ◽

Equivalent Oxide Thickness ◽

Gate Leakage ◽

High K ◽

High K Gate Dielectric

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Gate Leakage Properties of MOS Devices with Tri-Layer High-k Gate Dielectric

2005 IEEE Conference on Electron Devices and Solid-State Circuits ◽

10.1109/edssc.2005.1635370 ◽

2006 ◽

Author(s):

J. P. Xu W. B. Chen

Keyword(s):

Gate Dielectric ◽

Gate Leakage ◽

Mos Devices ◽

High K ◽

High K Gate Dielectric

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Electrical properties of LaTiO high-k gate dielectric Ge MOS Capacitor and Ti content optimization

Acta Physica Sinica ◽

10.7498/aps.65.037301 ◽

2016 ◽

Vol 65 (3) ◽

pp. 037301

Author(s):

Xu Huo-Xi ◽

Xu Jing-Ping

Keyword(s):

Electrical Properties ◽

Gate Dielectric ◽

Mos Capacitor ◽

High K ◽

Ti Content ◽

Content Optimization ◽

High K Gate Dielectric

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Silicon Oxynitride Gate Dielectric for Reducing Gate Leakage and Boron Penetration Prior to High-k Gate Dielectric Implementation

High Dielectric Constant Materials - Springer Series in Advanced Microelectronics ◽

10.1007/3-540-26462-0_7 ◽

2005 ◽

pp. 195-220 ◽

Cited By ~ 1

Author(s):

H.-H. Tseng

Keyword(s):

Gate Dielectric ◽

Silicon Oxynitride ◽

Gate Leakage ◽

High K ◽

Boron Penetration ◽

High K Gate Dielectric

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The impact of high-k gate dielectric on Junctionless Vertical Double Gate MOSFET

International Journal of Computer Sciences and Engineering ◽

10.26438/ijcse/v6i6.14751478 ◽

2018 ◽

Vol 6 (6) ◽

pp. 1475-1478

Author(s):

Jagdeep Rahul

Keyword(s):

Gate Dielectric ◽

Double Gate ◽

High K ◽

Double Gate Mosfet ◽

The Impact ◽

High K Gate Dielectric

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Development of High-K Gate Dielectric Materials

Journal of Inorganic Materials ◽

10.3724/sp.j.1077.2008.00865 ◽

2008 ◽

Vol 23 (5) ◽

pp. 865-871 ◽

Cited By ~ 2

Author(s):

De-Qi WU

Keyword(s):

Gate Dielectric ◽

Dielectric Materials ◽

High K ◽

High K Gate Dielectric

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Optimization of Device Dimensions of High-k Gate Dielectric Based DG-TFET for Improved Analog/RF Performance

Silicon ◽

10.1007/s12633-021-01127-y ◽

2021 ◽

Author(s):

Shubham Tayal ◽

Goyal Vibhu ◽

Shweta Meena ◽

Ravi Gupta

Keyword(s):

Gate Dielectric ◽

High K ◽

Rf Performance ◽

High K Gate Dielectric

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Lanthanum Doped Zirconium Oxide (LaZrO2) High-k Gate Dielectric FinFET SRAM Cell Optimization

Transactions on Electrical and Electronic Materials ◽

10.1007/s42341-021-00296-2 ◽

2021 ◽

Author(s):

Gurpurneet Kaur ◽

Sandeep Singh Gill ◽

Munish Rattan

Keyword(s):

Zirconium Oxide ◽

Gate Dielectric ◽

High K ◽

Sram Cell ◽

High K Gate Dielectric

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Polarity dependent reliability of advanced MOSFET using MOCVD nitrided Hf-silicate high-k gate dielectric

IEEE International Integrated Reliability Workshop Final Report 2002 IRWS-02 ◽

10.1109/irws.2002.1194241 ◽

2003 ◽

Cited By ~ 2

Author(s):

J. Zhang ◽

E. Zhao ◽

Q. Xiang ◽

J. Chan ◽

J. Jeon ◽

...

Keyword(s):

Gate Dielectric ◽

High K ◽

High K Gate Dielectric

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