A novel AlGaN/GaN/AlGaN double-heterojunction high electron mobility transistor for performance improvement

2011 International Conference on Signal Processing, Communication, Computing and Networking Technologies ◽

10.1109/icsccn.2011.6024636 ◽

2011 ◽

Cited By ~ 2

Author(s):

Saba Rajabi ◽

Ali A. Orouji ◽

Hamid Amini Moghadam ◽

S. E. Jamali Mahabadi ◽

Morteza Fathipour

Keyword(s):

Performance Improvement ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility ◽

Double Heterojunction

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A novel power High Electron Mobility Transistor with partial stepped recess in the drain access region for performance improvement

2011 International Conference on Signal Processing, Communication, Computing and Networking Technologies ◽

10.1109/icsccn.2011.6024557 ◽

2011 ◽

Cited By ~ 4

Author(s):

Saba Rajabi ◽

Ali A. Orouji ◽

Hamid Amini Moghadam ◽

S. E. Jamali Mahabadi ◽

Morteza Fathipour

Keyword(s):

Performance Improvement ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility

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Non-recessed-gate quasi-E-mode double heterojunction AlGaN/GaN high electron mobility transistor with high breakdown voltage

Chinese Physics B ◽

10.1088/1674-1056/23/7/077304 ◽

2014 ◽

Vol 23 (7) ◽

pp. 077304 ◽

Cited By ~ 1

Author(s):

Min-Han Mi ◽

Kai Zhang ◽

Xing Chen ◽

Sheng-Lei Zhao ◽

Chong Wang ◽

...

Keyword(s):

Breakdown Voltage ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility ◽

High Breakdown Voltage ◽

Double Heterojunction ◽

Recessed Gate

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RF Performance of Double Heterojunction High Electron Mobility Transistor with Various Lower/Upper Planar Doping Ratio Designs On SPST Switchs Application

2007 Asia-Pacific Microwave Conference ◽

10.1109/apmc.2007.4554692 ◽

2007 ◽

Author(s):

H. C. Chiu ◽

C. W. Chen ◽

Y. C. Huang ◽

R. J. Yang

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility ◽

Lower Upper ◽

Double Heterojunction ◽

Rf Performance ◽

Doping Ratio ◽

Planar Doping

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A novel double field-plate power high electron mobility transistor based on AlGaN/GaN for performance improvement

2011 International Conference on Signal Processing, Communication, Computing and Networking Technologies ◽

10.1109/icsccn.2011.6024558 ◽

2011 ◽

Cited By ~ 4

Author(s):

Saba Rajabi ◽

Ali A. Orouji ◽

Hamid Amini Moghadam ◽

S. E. Jamali Mahabadi ◽

Morteza Fathipour

Keyword(s):

Performance Improvement ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility ◽

Field Plate

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RF Performance Improvement of Metamorphic High-Electron Mobility Transistor Using $(\hbox{In}_{x}\hbox{Ga}_{1 - x}\hbox{As})_{m}/(\hbox{InAs})_{n}$ Superlattice-Channel Structure for Millimeter-Wave Applications

IEEE Electron Device Letters ◽

10.1109/led.2010.2048995 ◽

2010 ◽

Vol 31 (7) ◽

pp. 677-679 ◽

Cited By ~ 3

Author(s):

Chien-I Kuo ◽

Heng-Tung Hsu ◽

Yu-Lin Chen ◽

Chien-Ying Wu ◽

Edward Yi Chang ◽

...

Keyword(s):

Performance Improvement ◽

Millimeter Wave ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

Channel Structure ◽

High Electron ◽

High Electron Mobility ◽

Rf Performance

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Effect of AlxGa1−xN buffer layer on the structural and electrical properties of AlGaN/GaN/AlxGa1−xN double heterojunction high electron mobility transistor structures

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.5129031 ◽

2020 ◽

Vol 38 (2) ◽

pp. 022204

Author(s):

Yongjun Nam ◽

Uiho Choi ◽

Kyeongjae Lee ◽

Taehoon Jang ◽

Donghyeop Jung ◽

...

Keyword(s):

Electrical Properties ◽

Buffer Layer ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility ◽

Structural And Electrical Properties ◽

Double Heterojunction

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A simulation study on the DC characteristics of the Ga0.52In0.48P/In0.2Ga0.8As/Ga0.52In0.48P double heterojunction pseudomorphic high electron mobility transistor

Solid-State Electronics ◽

10.1016/s0038-1101(99)00322-6 ◽

2000 ◽

Vol 44 (6) ◽

pp. 1035-1042

Author(s):

S.F Yoon ◽

Adele H.T Kam ◽

B.P Gay ◽

H.Q Zheng

Keyword(s):

Simulation Study ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility ◽

Dc Characteristics ◽

Double Heterojunction

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Quasi-persistent photoconductivity of double-heterojunction pseudomorphic high-electron-mobility transistor epitaxial wafers

Journal of Crystal Growth ◽

10.1016/s0022-0248(99)00592-8 ◽

2000 ◽

Vol 209 (2-3) ◽

pp. 440-444

Author(s):

Hirotaka Kizuki ◽

Yoshiharu Kouji ◽

Norio Hayafuji ◽

Yasutomo Kajikawa

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

Persistent Photoconductivity ◽

High Electron Mobility ◽

Double Heterojunction

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A microwave power double-heterojunction high electron mobility transistor

IEEE Electron Device Letters ◽

10.1109/edl.1985.26148 ◽

1985 ◽

Vol 6 (7) ◽

pp. 341-343 ◽

Cited By ~ 22

Author(s):

K. Hikosaka ◽

Y. Hirachi ◽

T. Mimura ◽

M. Abe

Keyword(s):

Microwave Power ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility ◽

Double Heterojunction

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Enhancement of 2D Electron Gas Mobility in an AlN/GaN/AlN Double‐Heterojunction High‐Electron‐Mobility Transistor by Epilayer Stress Engineering

physica status solidi (a) ◽

10.1002/pssa.201900818 ◽

2019 ◽

Vol 217 (7) ◽

pp. 1900818

Author(s):

Shashank Patwal ◽

Manvi Agrawal ◽

K. Radhakrishnan ◽

Tian Long Alex Seah ◽

Nethaji Dharmarasu

Keyword(s):

Electron Mobility ◽

Electron Gas ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility ◽

2D Electron Gas ◽

Stress Engineering ◽

Double Heterojunction ◽

Gas Mobility

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