A microwave power double-heterojunction high electron mobility transistor

1985 ◽  
Vol 6 (7) ◽  
pp. 341-343 ◽  
Author(s):  
K. Hikosaka ◽  
Y. Hirachi ◽  
T. Mimura ◽  
M. Abe
Keyword(s):  
Microwave Power ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Double Heterojunction

scholarly journals Design of a High-Efficiency GaN High-Electron Mobility Transistor Microwave Power Amplifier

2020 ◽  
Vol 30.8 (147) ◽  
pp. 46-50
Author(s):  
Duy Manh Luong ◽  
◽  
Huy Hoang Nguyen
Keyword(s):  
Power Amplifier ◽  
Microwave Power ◽  
Electron Mobility ◽  
High Efficiency ◽  
High Electron Mobility Transistor ◽  
Satellite Communications ◽  
High Electron ◽  
High Electron Mobility ◽  
Power Added Efficiency ◽  
Microwave Power Amplifier

This study presents a design procedure to obtain high-efficiency for microwave power amplifier. The designed amplifier uses a GaN high electron mobility transistor as an active device. Matching networks including input and output networks are realized using Megtron6 substrate microstrip lines. The designed amplifier operates at 2.1 GHz band. The simulated results show that the amplifier delivers a maximum power-added efficiency of 73.2% at output power and power gain of 47.8 dBm and 13.8 dB, respectively. This promising designed performance makes this amplifier to be an excellent candidate for use in modern wireless communication systems like radar, mobile network, and satellite communications.

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