Enhancement of 2D Electron Gas Mobility in an AlN/GaN/AlN Double‐Heterojunction High‐Electron‐Mobility Transistor by Epilayer Stress Engineering

2019 ◽  
Vol 217 (7) ◽  
pp. 1900818
Author(s):  
Shashank Patwal ◽  
Manvi Agrawal ◽  
K. Radhakrishnan ◽  
Tian Long Alex Seah ◽  
Nethaji Dharmarasu
Keyword(s):  
Electron Mobility ◽  
Electron Gas ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
2D Electron Gas ◽  
Stress Engineering ◽  
Double Heterojunction ◽  
Gas Mobility

Quantum Coherence and the Kondo Effect in the 2D Electron Gas of Magnetically Undoped AlGaN/GaN High-Electron-Mobility Transistor Heterostructures

2020 ◽  
Vol 54 (9) ◽  
pp. 1150-1154
Author(s):  
N. K. Chumakov ◽  
I. A. Chernykh ◽  
A. B. Davydov ◽  
I. S. Ezubchenko ◽  
Yu. V. Grishchenko ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Quantum Coherence ◽  
Kondo Effect ◽  
Electron Gas ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
2D Electron Gas
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