Research on the Static Characteristics of CMOS Circuits in the Effects of Gate Tunneling Current

2010 ◽  
Author(s):  
Wu Tiefeng ◽  
Zhang Heming ◽  
Hu Huiyong
Keyword(s):  
Tunneling Current ◽  
Cmos Circuits ◽  
Static Characteristics ◽  
Gate Tunneling

An analytical gate tunneling current model for MOSFETs

2012 ◽  
Vol 46 (3) ◽  
pp. 386-390 ◽  
Author(s):  
Iman Abaspur Kazerouni ◽  
Seyed Ebrahim Hosseini
Keyword(s):  
Current Model ◽  
Tunneling Current ◽  
Gate Tunneling

Resonant gate tunneling current in double-gate SOI: a simulation study

2003 ◽  
Vol 50 (12) ◽  
pp. 2579-2581 ◽  
Author(s):  
Chang-Hoon Choi ◽  
Zhiping Yu ◽  
R.W. Dutton
Keyword(s):  
Simulation Study ◽  
Tunneling Current ◽  
Double Gate ◽  
Gate Tunneling

Gate Tunneling Current Predicting Model for Scaled NMOSFET Devices

2013 ◽  
Vol 772 ◽  
pp. 422-426
Author(s):  
Zhi Chao Zhao ◽  
Tie Feng Wu ◽  
Hui Bin Ma ◽  
Quan Wang ◽  
Jing Li
Keyword(s):  
Tunneling Current ◽  
Gate Oxide ◽  
Oxide Thickness ◽  
Integral Approach ◽  
Predicting Model ◽  
Mos Devices ◽  
Gate Oxide Thickness ◽  
Novel Theory ◽  
Gate Tunneling ◽  
Thin Gate Oxide

With the scaling of MOS devices, gate tunneling current increases significantly due to thinner gate oxides, and static characteristics of devices and circuit are severely affected by the presence of gate tunneling currents. In this paper, a novel theory gate tunneling current predicting model using integral approach is presented in ultra-thin gate oxide MOS devices that tunneling current changes with gate-oxide thickness. To analyze quantitatively the behaviors of scaled MOS devices in the effects of gate tunneling current and predict the trends, the characteristics of MOS devices are studied in detail using HSPICE simulator. The simulation results in BSIM4 model well agree with the model proposed. The theory and experiment data are contributed to the VLSI circuit design in the future.

Edge Effects on Gate Tunneling Current in HEMTs

2007 ◽  
Vol 54 (10) ◽  
pp. 2614-2622 ◽  
Author(s):  
D. Mahaveer Sathaiya ◽  
Shreepad Karmalkar
Keyword(s):  
Edge Effects ◽  
Tunneling Current ◽  
Gate Tunneling

Modeling the partition of noise from the gate-tunneling current in MOSFETs

2005 ◽  
Vol 26 (8) ◽  
pp. 550-552 ◽  
Author(s):  
J.C. Ranuarez ◽  
M.J. Deen ◽  
Chih-Hung Chen
Keyword(s):  
Tunneling Current ◽  
Gate Tunneling
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