Resonant gate tunneling current in double-gate SOI: a simulation study

Chang-Hoon Choi;  Zhiping Yu; R.W. Dutton

doi:10.1109/ted.2003.920126

Resonant gate tunneling current in double-gate SOI: a simulation study

IEEE Transactions on Electron Devices ◽

10.1109/ted.2003.920126 ◽

2003 ◽

Vol 50 (12) ◽

pp. 2579-2581 ◽

Cited By ~ 3

Author(s):

Chang-Hoon Choi ◽

Zhiping Yu ◽

R.W. Dutton

Keyword(s):

Simulation Study ◽

Tunneling Current ◽

Double Gate ◽

Gate Tunneling

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Resonant gate tunneling current in double-gate SOI: a simulation study

IEEE Transactions on Electron Devices ◽

10.1109/ted.2003.820126 ◽

2003 ◽

Vol 50 (12) ◽

pp. 2579-2581 ◽

Cited By ~ 1

Author(s):

Chang-Hoon Choi ◽

Zhiping Yu ◽

R.W. Dutton

Keyword(s):

Simulation Study ◽

Tunneling Current ◽

Double Gate ◽

Gate Tunneling

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Temperature dependence of compact analytical modeling of gate tunneling current in Double Gate MOSFETs

2012 13th International Conference on Ultimate Integration on Silicon (ULIS) ◽

10.1109/ulis.2012.6193360 ◽

2012 ◽

Author(s):

G. Darbandy ◽

J. Aghassi ◽

J. Sedlmeir ◽

U. Monga ◽

I. Garduno ◽

...

Keyword(s):

Temperature Dependence ◽

Analytical Modeling ◽

Tunneling Current ◽

Double Gate ◽

Gate Tunneling

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Explicit model for the gate tunneling current in double-gate MOSFETs

Solid-State Electronics ◽

10.1016/j.sse.2011.11.003 ◽

2012 ◽

Vol 68 ◽

pp. 93-97 ◽

Cited By ~ 6

Author(s):

Ferney Chaves ◽

David Jiménez ◽

Jordi Suñé

Keyword(s):

Tunneling Current ◽

Double Gate ◽

Explicit Model ◽

Gate Tunneling

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Accurate Calculation of Gate Tunneling Current in Double-Gate and Single-Gate SOI MOSFETs Through Gate Dielectric Stacks

IEEE Transactions on Electron Devices ◽

10.1109/ted.2012.2206597 ◽

2012 ◽

Vol 59 (10) ◽

pp. 2589-2596 ◽

Cited By ~ 4

Author(s):

Ferney A. Chaves ◽

David Jimenez ◽

Francisco J. Garcia Ruiz ◽

Andrés Godoy ◽

Jordi Sune

Keyword(s):

Gate Dielectric ◽

Tunneling Current ◽

Double Gate ◽

Accurate Calculation ◽

Gate Tunneling

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An analytical gate tunneling current model for MOSFETs

Semiconductors ◽

10.1134/s1063782612030141 ◽

2012 ◽

Vol 46 (3) ◽

pp. 386-390 ◽

Cited By ~ 2

Author(s):

Iman Abaspur Kazerouni ◽

Seyed Ebrahim Hosseini

Keyword(s):

Current Model ◽

Tunneling Current ◽

Gate Tunneling

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Numerical Corrections to Estimate Depletion Region Width in Pseudo-two-dimensional Model of Double-Gate Tunneling FET

10.1109/niles53778.2021.9600561 ◽

2021 ◽

Author(s):

Muhammad Elgamal ◽

Ahmed Shaker

Keyword(s):

Depletion Region ◽

Double Gate ◽

Two Dimensional ◽

Dimensional Model ◽

Tunneling Fet ◽

Two Dimensional Model ◽

Gate Tunneling

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Experimental Evidence for Reduction of Gate Tunneling Current in FinFET Structures and Its Dependence on the Fin Width

2006 European Solid-State Device Research Conference ◽

10.1109/essder.2006.307716 ◽

2006 ◽

Cited By ~ 2

Author(s):

Tamara Rudenko ◽

Alexey Nazarov ◽

Valeria Kilchytska ◽

Denis Flandre ◽

Nadine Collaert ◽

...

Keyword(s):

Experimental Evidence ◽

Tunneling Current ◽

Gate Tunneling

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A novel analytical approach to optimize the work functions of dual-material double-gate Tunneling-FETs

Superlattices and Microstructures ◽

10.1016/j.spmi.2018.12.016 ◽

2019 ◽

Vol 126 ◽

pp. 63-71 ◽

Cited By ~ 3

Author(s):

Reza Meshkin ◽

Seyed Ali Sedigh Ziabari ◽

Ahmad Rezaee Jordehi

Keyword(s):

Analytical Approach ◽

Double Gate ◽

Work Functions ◽

Gate Tunneling ◽

Dual Material

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Analysis of Tunneling Current for Bottom Gate Voltage of Sub-10 nm Asymmetric Double Gate MOSFET

The Journal of the Korean Institute of Information and Communication Engineering ◽

10.6109/jkiice.2015.19.1.163 ◽

2015 ◽

Vol 19 (1) ◽

pp. 163-168

Author(s):

Hakkee Jung

Keyword(s):

Gate Voltage ◽

Tunneling Current ◽

Double Gate ◽

Double Gate Mosfet ◽

Bottom Gate

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Study on the novel double-gate tunneling field-effect transistor with InAs source

Proceedings of the 2015 4th International Conference on Computer, Mechatronics, Control and Electronic Engineering ◽

10.2991/iccmcee-15.2015.280 ◽

2015 ◽

Author(s):

YueHua Dai ◽

Ning Li ◽

Zhen Chen ◽

Bo Jin

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Double Gate ◽

The Novel ◽

Effect Transistor ◽

Gate Tunneling

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