Mechanical stress measurement electronics based on piezo-resistive and piezo-Hall effects

2003 ◽  
Author(s):  
R. Magnani ◽  
F. Tinfena ◽  
V. Kempe ◽  
L. Fanucci
Keyword(s):  
Mechanical Stress ◽  
Stress Measurement ◽  
Hall Effects

Instabilities in the Mechanical Stress in Deposited SiO2 Films Caused by Thermal Treatments

1990 ◽  
Vol 181 ◽  
Author(s):  
Bharat Bhushan ◽  
S.P. Murarka
Keyword(s):  
Heat Treatment ◽  
Mechanical Stress ◽  
Stress Measurement ◽  
In Situ Stress ◽  
Thermal Treatments ◽  
Heat Treated ◽  
Large Hysteresis ◽  
In Situ Stress Measurement ◽  
Deposited Films

ABSTRACTUsing an in-situ stress measurement technique that measures stress as a function of annealing temperature, instabilities in mechanical stress induced by heat treatment in a variety of doped/undoped SiO2 films deposited by APCVD, LPCVD and PECVD techniques have been investigated. A large hysteresis in mechanical stress, caused by first heat treatment to which the as-deposited films are subjected, has been observed in films deposited by APCVD/LPCVD techniques. No such hysteresis is obsesrved in films deposited by PECVD technique. Hysteresis in APCVD/LPCVD films is found to vanish once the films are heat treated at or above 800°C. The results are discussed in terms of oxide densification, the presence of hydrogenous species, and phosphorous.

scholarly journals Microwave Sensor for Mechanical Stress Measurement Based on Ferroelectric Graphene Nanosheet Composites

2014 ◽  
Vol 87 ◽  
pp. 124-127 ◽  
Author(s):  
Alexander Aman ◽  
Soeren Majcherek ◽  
Marc-Peter Schmidt ◽  
Soeren Hirsch
Keyword(s):  
Mechanical Stress ◽  
Stress Measurement ◽  
Graphene Nanosheet ◽  
Microwave Sensor

Mechanical Stress-Induced Damage on Breakdown Characteristic of Dielectric Thin Films in MOS Transistors

2003 ◽  
Author(s):  
Hideo Miura ◽  
Hiroshi Moriya
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Mechanical Stress ◽  
Stress Measurement ◽  
Surface Oxidation ◽  
Intrinsic Stress ◽  
First Principles Calculation ◽  
Mos Transistors ◽  
Mos Transistor

Mechanical Stress-induced deterioration of the breakdown characteristic of SiO2 films was discussed analytically and experimentally. The decrease in the band gap of the oxide due to the crystal deformation is the main reason for the deterioration. The change rate was analyzed by the first principles calculation. The mechanism of the stress development in a MOS transistor structure was clarified by stress measurement of thin films. The intrinsic stress of the thin films used for the gate electrode of the transistor is the important factor for determining the residual stress in the oxide under the electrode. The residual stress in the silicon substrate before the oxide (SiO2) formation (surface oxidation of the substrate) is another important factor which affects the quality of the oxide film. In particular, the density of the unstable atomic bonding of silicon near the Si/SiO2 interface varies depending on the stress in the substrate.

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