An advanced drain current model for DGMOSFETs including self-heating effects

2012 ◽  
Author(s):  
B. Gonzalez ◽  
B. Iniguez ◽  
A. Lazaro ◽  
J. B. Roldan ◽  
A. M. Roldan ◽  
...  
Keyword(s):  
Current Model ◽  
Drain Current ◽  
Self Heating ◽  
Heating Effects

scholarly journals An analytical model for the current voltage characteristics of GaN-capped AlGaN/GaN and AlInN/GaN HEMTs including thermal and self-heating effects

2020 ◽  
Vol 10 (2) ◽  
pp. 1791
Author(s):  
A. Bellakhdar ◽  
A. Telia ◽  
J. L. Coutaz
Keyword(s):  
Analytical Model ◽  
Drain Current ◽  
High Electron Mobility Transistors ◽  
Published Data ◽  
High Electron ◽  
Self Heating ◽  
Heating Effects ◽  
Cap Layer ◽  
Gan Hemts ◽  
Sheet Density

We present an analytical model for the I-V characteristics of AlGaN/GaN and AlInN/GaN high electron mobility transistors (HEMT). Our study focuses on the influence of a GaN capping layer, and of thermal and self-heating effects. Spontaneous and piezoelectric polarizations at Al (Ga,In)N/GaN and GaN/Al(Ga,In)N interfaces have been incorporated in the analysis. Our model permits to fit several published data. Our results indicate that the GaN cap layer reduces the sheet density of the two-dimensional electron gas (2DEG), leading to a decrease of the drain current, and that n+-doped GaN cap layer provides a higher sheet density than undoped one. In n+GaN/AlInN/GaN HEMTs, the sheet carrier concentration is higher than in n+GaN/AlGaN/GaN HEMTs, due to the higher spontaneous polarization charge and conduction band discontinuity at the substrate/barrier layer interface.

An improved electron current model of AlGaAs/GaAs HBTs including self-heating effects

1997 ◽  
Vol 28 (5) ◽  
pp. 571-579
Author(s):  
Wen-yi Zhou ◽  
S. Chen ◽  
Y.B. Liou ◽  
C. Huang
Keyword(s):  
Current Model ◽  
Electron Current ◽  
Self Heating ◽  
Heating Effects

scholarly journals Deep submicrometer SOI MOSFET drain current model including series resistance, self-heating and velocity overshoot effects

2000 ◽  
Vol 21 (5) ◽  
pp. 239-241 ◽  
Author(s):  
J.B. Roldan ◽  
F. Gamiz ◽  
J.A. Lopez-Villanueva ◽  
P. Cartujo-Cassinello
Keyword(s):  
Series Resistance ◽  
Current Model ◽  
Drain Current ◽  
Velocity Overshoot ◽  
Soi Mosfet ◽  
Self Heating ◽  
Deep Submicrometer

An Analytical Drain Current Model for Dual-material Gate Graded - channel and Dual-oxide Thickness Cylindrical Gate (DMG-GC-DOT) MOSFET

2019 ◽  
Vol 9 (2) ◽  
pp. 291-297
Author(s):  
Hind Jaafar ◽  
Abdellah Aouaj ◽  
Ahmed Bouziane ◽  
Benjamin Iñiguez
Keyword(s):  
Current Model ◽  
Drain Current ◽  
Oxide Thickness ◽  
Subthreshold Current ◽  
The Poisson Equation ◽  
Strong Inversion ◽  
Cylindrical Form ◽  
Silvaco Atlas ◽  
Dual Material ◽  
Good Agreement

Background: A novel Dual Material Gate Graded Channel and Dual Oxide Thickness Cylindrical Gate (DMG-GC-DOT) MOSFET is presented in this paper. Methods: Analytical model of drain current is developed using a quasi-two-dimensional cylindrical form of the Poisson equation and is expressed as a function of the surface potential, which is calculated using the expressions of the current density. Results: Comparison of the analytical results with 3D numerical simulations using Silvaco Atlas - TCAD software presents a good agreement from subthreshold to strong inversion regime and for different bias voltages. Conclusion: Two oxide thicknesses with different permittivity can effectively improve the subthreshold current of DMG-GC-DOT MOSFET.

Study of self-heating effects in SOI and conventional MOSFETs with electro-thermal particle-based device simulator

2012 ◽  
Vol 11 (1) ◽  
pp. 106-117 ◽  
Author(s):  
K. Raleva ◽  
D. Vasileska ◽  
A. Hossain ◽  
S.-K. Yoo ◽  
S. M. Goodnick
Keyword(s):  
Self Heating ◽  
Heating Effects
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