Role of N/sub 2/ ion implantation dose on hot carrier lifetime in deep submicron NMOS devices

2002 ◽  
Author(s):  
F.J. Guarin ◽  
S.E. Rauch ◽  
G. La Rosa ◽  
K. Brelsford
Keyword(s):  
Ion Implantation ◽  
Carrier Lifetime ◽  
Implantation Dose ◽  
Deep Submicron ◽  
Hot Carrier

Optimization of Ion Implantation processes for 4H-SiC DIMOSFET

MRS Advances ◽  
2016 ◽  
Vol 1 (55) ◽  
pp. 3673-3678 ◽  
Author(s):  
N. Piluso ◽  
E. Fontana ◽  
M.A. Di Stefano ◽  
G. Litrico ◽  
S. Privitera ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Point Defects ◽  
Electrical Characteristic ◽  
Implantation Dose ◽  
Annealing Process ◽  
Considerable Improvement ◽  
Electrical Characteristics ◽  
Different Temperatures ◽  
Implantation Process

AbstractIn this paper the defects generated by ion implantation in 4H-SiC DIMOSFET (Double Implanted MOSFETs), and their evolution after annealing process, have been studied in detail. The point defects generated by the source or body implantation process have been detected by micro-photoluminescence (µPL) and the effect of these defects on the electrical characteristics of the DIMOSFET has been studied. The role of the annealing process has been carefully investigated by using different temperatures. It appears fundamental for the restoring of the crystal damage. The effect of the ion implantation dose has been investigated as well. By reducing the source ion implanted dose a large decrease of point defects has been detected and a considerable improvement of the electrical characteristic of the DIMOSFET has been observed.

Carrier lifetime versus ion‐implantation dose in silicon on sapphire

1987 ◽  
Vol 50 (8) ◽  
pp. 460-462 ◽  
Author(s):  
F. E. Doany ◽  
D. Grischkowsky ◽  
C.‐C. Chi
Keyword(s):  
Ion Implantation ◽  
Carrier Lifetime ◽  
Implantation Dose

Role of Mechanical Stresses at Ion Implantation of CdHgTe Solid Solutions

2013 ◽  
Vol 58 (9) ◽  
pp. 872-880 ◽  
Author(s):  
Smirnov A.B. Smirnov A.B. ◽  
◽  
Lytvyn O.S. Lytvyn O.S. ◽  
Morozhenko V.A. Morozhenko V.A. ◽  
Savkina R.K. Savkina R.K. ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Solid Solutions ◽  
Mechanical Stresses

Mossbauer Study of the Role of Aluminum and Chromium in Nitrogen Implanted Iron

1991 ◽  
Vol 235 ◽  
Author(s):  
M. Kopcewicz ◽  
J. Jagielski ◽  
A. Turos ◽  
D. L. Williamson
Keyword(s):  
Thermal Stability ◽  
Ion Implantation ◽  
Metallic Iron ◽  
Conversion Electron ◽  
Alloying Elements ◽  
Mössbauer Study ◽  
Conversion Electron Mössbauer Spectroscopy ◽  
Conversion Electron Mossbauer Spectroscopy ◽  
Thermal Stability Of

ABSTRACTThe role of alloying elements such as Cr and Al in the formation and stability of the nitride phases formed due to N ion implantation into metallic iron was studied by conversion electron Mössbauer spectroscopy (CEMS). The thermal stability of nitride phases upon 1 h annealing was greatly increased as a result of co-implanting either Cr or Al with N as compared to pure α-Fe implanted only with N.

Hot Carrier Effects in Deep Submicron Nmosfets

1996 ◽  
Vol 428 ◽  
Author(s):  
Abhijit Phanse ◽  
Samar Saha
Keyword(s):  
Electric Fields ◽  
Channel Length ◽  
Deep Submicron ◽  
Short Channel ◽  
Hot Carrier ◽  
Velocity Saturation ◽  
Substrate Current ◽  
Hot Carrier Effects ◽  
Saturation Effects ◽  
Channel Lengths

AbstractThis paper addresses hot-carrier related reliability issues in deep submicron silicon nMOSFET devices. In order to monitor the hot-carrier induced device degradation, the substrate current was measured for devices with varying channel lengths (20 um - 0.24 um) under various biasing conditions. Deep submicron devices experience velocity saturation of channel carriers due to extremely high lateral electric fields. To evaluate the effects of velocity saturation in the channel, the pinch-off length in the channel was extracted for all the devices of the target technology. It was observed that for very short channel devices, carriers in most of the channel experience velocity saturation and almost the entire channel gets pinched off. It is shown in this paper that for very short channel devices, the pinch-off length in the channel is limited by the effective channel length, and that velocity saturation effects are critical to the transport of channel carriers.

Impact of statistics on hot-carrier lifetime estimates of n-channel MOSFETs

1993 ◽  
Author(s):  
Eric S. Snyder ◽  
Ashish Kapoor ◽  
Clint Anderson
Keyword(s):  
Carrier Lifetime ◽  
Hot Carrier
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