Refined Wide Band Modelling and Design of CMOS-Compatible Spiral Inductors with BCB Dielectric Layer

2003 ◽  
Author(s):  
Yuri Tikhov ◽  
Dongha Shim ◽  
Kuang Woo Nam ◽  
Insang Song
Keyword(s):  
Dielectric Layer ◽  
Wide Band ◽  
Spiral Inductors ◽  
Cmos Compatible

Wide-band compact modeling of spiral inductors in RFICs

2003 ◽  
Author(s):  
D. Melendy ◽  
P. Francis ◽  
C. Pichler ◽  
Kyuwoon Hwang ◽  
G. Srinivasan ◽  
...  
Keyword(s):  
Wide Band ◽  
Compact Modeling ◽  
Spiral Inductors

CMOS-compatible surface-micromachined suspended-spiral inductors for multi-GHz silicon RF ICs

2002 ◽  
Vol 23 (10) ◽  
pp. 591-593 ◽  
Author(s):  
Jun-Bo Yoon ◽  
Yun-Seok Choi ◽  
Byeong-Il Kim ◽  
Yunseong Eo ◽  
Euisik Yoon
Keyword(s):  
Spiral Inductors ◽  
Cmos Compatible ◽  
Rf Ics

scholarly journals Wide-Band Modeling On-Chip Spiral Inductors Using Frequency-Dependent Conformal ADI-FDTD Method

IEEE Access ◽  
2019 ◽  
Vol 7 ◽  
pp. 184940-184949 ◽  
Author(s):  
Hongxing Zheng ◽  
Yue Wu ◽  
Kanglong Zhang ◽  
Lu Wang ◽  
Mengjun Wang ◽  
...  
Keyword(s):  
Fdtd Method ◽  
Wide Band ◽  
Frequency Dependent ◽  
Spiral Inductors ◽  
On Chip

scholarly journals CMOS-compatible synaptic transistor gated by chitosan electrolyte-Ta2O5 hybrid electric double layer

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Shin-Yi Min ◽  
Won-Ju Cho
Keyword(s):  
Double Layer ◽  
Dielectric Layer ◽  
Electric Double Layer ◽  
Oxide Semiconductor ◽  
Organic Polymer ◽  
Cmos Process ◽  
Electrical Stability ◽  
Dielectric Thin Film ◽  
Cmos Compatible ◽  
Hybrid Electric

Abstract This study proposes a hybrid electric double layer (EDL) with complementary metal-oxide semiconductor (CMOS) process compatibility by stacking a chitosan electrolyte and a Ta2O5 high-k dielectric thin film. Bio-inspired synaptic transistors with excellent electrical stability were fabricated using the proposed hybrid EDL for the gate dielectric layer. The Ta2O5 high-k dielectric layer with high chemical resistance, thermal stability, and mechanical strength enables CMOS-compatible patterning processes on biocompatible organic polymer chitosan electrolytes. This technique achieved ion-conduction from the chitosan electrolyte to the In-Ga-Zn oxide (IGZO) channel layer. The on/off current ratio, subthreshold voltage swing, and the field-effect mobility of the fabricated IGZO EDL transistors (EDLTs) exhibited excellent electrical properties of 1.80 × 107, 96 mV/dec, and 3.73 cm2/V·s, respectively. A resistor-loaded inverter was constructed by connecting an IGZO EDLT with a load resistor (400 MΩ) in series. This demonstrated good inverter action and responded to the square-wave input signals. Synaptic behaviours such as the hysteresis window and excitatory post-synaptic current (EPSC) variations were evaluated for different DC gate voltage sweep ranges and different AC gate spike stimuli, respectively. Therefore, the proposed organic–inorganic hybrid EDL is expected to be useful for implementing an extremely compact neural architecture system.

The detailed analysis of high Q CMOS-compatible microwave spiral inductors in silicon technology

1998 ◽  
Vol 45 (9) ◽  
pp. 1953-1959 ◽  
Author(s):  
Min Park ◽  
Seonghearn Lee ◽  
Cheon Soo Kim ◽  
Hyun Kyu Yu ◽  
Kee Soo Nam
Keyword(s):  
Detailed Analysis ◽  
High Q ◽  
Silicon Technology ◽  
Spiral Inductors ◽  
Cmos Compatible
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