CMOS-Compatible Micromachined Edge-Suspended Spiral Inductors With High Q-Factors and Self-Resonance Frequencies

2004 ◽  
Vol 25 (6) ◽  
pp. 363-365 ◽  
Author(s):  
K.J. Chen ◽  
W.C. Hon ◽  
J. Zhang ◽  
L.L.W. Leung
Keyword(s):  
High Q ◽  
Resonance Frequencies ◽  
Spiral Inductors ◽  
Cmos Compatible ◽  
Q Factors

CMOS-Compatible Micromachined Toroid and Solenoid Inductors With High $Q$-Factors

2007 ◽  
Vol 28 (3) ◽  
pp. 226-228 ◽  
Author(s):  
Imed Zine-El-Abidine ◽  
Michal Okoniewski
Keyword(s):  
High Q ◽  
Cmos Compatible ◽  
Q Factors

The detailed analysis of high Q CMOS-compatible microwave spiral inductors in silicon technology

1998 ◽  
Vol 45 (9) ◽  
pp. 1953-1959 ◽  
Author(s):  
Min Park ◽  
Seonghearn Lee ◽  
Cheon Soo Kim ◽  
Hyun Kyu Yu ◽  
Kee Soo Nam
Keyword(s):  
Detailed Analysis ◽  
High Q ◽  
Silicon Technology ◽  
Spiral Inductors ◽  
Cmos Compatible

High Q broadband copper spiral inductors with Q=45 on proton-bombarded semi-insulating silicon substrate

2003 ◽  
Author(s):  
Heng-Ming Hsu ◽  
Jiong-Guang Su ◽  
Yo-Sheng Lin ◽  
Ming-Hao Tseng ◽  
Jason Chih-Hsien Lin ◽  
...  
Keyword(s):  
Silicon Substrate ◽  
High Q ◽  
Spiral Inductors

scholarly journals CMOS compatible high-Q photonic crystal nanocavity fabricated with photolithography on silicon photonic platform

2015 ◽  
Vol 5 (1) ◽  
Author(s):  
Yuta Ooka ◽  
Tomohiro Tetsumoto ◽  
Akihiro Fushimi ◽  
Wataru Yoshiki ◽  
Takasumi Tanabe
Keyword(s):  
Photonic Crystal ◽  
High Q ◽  
Silicon Photonic ◽  
Cmos Compatible

Optical properties of GaN Photonic Crystal Membrane Nanocavities at Blue Wavelengths

2005 ◽  
Vol 892 ◽  
Author(s):  
Yong-Seok Choi ◽  
Cedrik Meier ◽  
Rajat Sharma ◽  
Kevin Hennessy ◽  
Elaine D. Haberer ◽  
...  
Keyword(s):  
Optical Properties ◽  
Photonic Crystal ◽  
Quantum Wells ◽  
Multiple Quantum Well ◽  
Light Extraction ◽  
Design Parameters ◽  
Multiple Quantum ◽  
Membrane Structures ◽  
High Q ◽  
Q Factors

AbstractWe have investigated the design parameters for high-Q photonic-crystal (PC) bandgap modes in the emission wavelengths of InGaN/GaN multiple quantum wells. We demonstrate experimental schemes to realize 2D triangular-lattice PC membrane structures, which is essential to obtain photonic bandgap (PBG) modes, and the optical properties of L7 membrane nanocavities that consist of seven missing holes in the Γ-K direction. L7 cavities show pronounced resonances with Q factors of 300 to 800 in the PBG as well as the enhancement of light extraction of the broad InGaN/GaN multiple-quantum-well emission by the 2D PBG.

High and Moderate-Level Vacuum Packaging of Vibratory MEMS

2013 ◽  
Vol 2013 (1) ◽  
pp. 000705-000710 ◽  
Author(s):  
Igor P. Prikhodko ◽  
Brenton R. Simon ◽  
Gunjana Sharma ◽  
Sergei A. Zotov ◽  
Alexander A. Trusov ◽  
...  
Keyword(s):  
Vacuum Packaging ◽  
Moderate Level ◽  
Silicon On Insulator ◽  
Quality Factors ◽  
High Q ◽  
Hermetic Sealing ◽  
Hemispherical Resonator ◽  
Q Factors ◽  
Grade Performance

We report vacuum packaging procedures for low-stress die attachment and versatile hermetic sealing of resonant MEMS. The developed in-house infrastructure allows for both high and moderate-level vacuum packaging addressing the requirements of various applications. Prototypes of 100 μm silicon-on-insulator Quadruple Mass Gyroscopes (QMGs) were packaged using the developed process with and without getters. Characterization of stand-alone packaged devices with no getters resulted in stable quality factors (Q-factors) of 1000 (corresponding to 0.5 Torr vacuum level), while devices sealed with activated getters demonstrated Q-factors of 1.2 million (below 0.1 mTorr level inside the package). Due to the high Q-factors achieved in this work, we project that the QMG used in this work can potentially reach the navigation-grade performance, potentially bridging the gap between the inertial silicon MEMS and the state-of-the-art fused quartz hemispherical resonator gyroscopes.

scholarly journals A Novel High Q Lamé-Mode Bulk Resonator with Low Bias Voltage

Micromachines ◽  
2020 ◽  
Vol 11 (8) ◽  
pp. 737
Author(s):  
Tianyun Wang ◽  
Zeji Chen ◽  
Qianqian Jia ◽  
Quan Yuan ◽  
Jinling Yang ◽  
...  
Keyword(s):  
Bias Voltage ◽  
Integrated Circuit ◽  
Nonlinear Behavior ◽  
Silicon On Insulator ◽  
Transduction Efficiency ◽  
Air Gaps ◽  
High Q ◽  
Bulk Mode ◽  
Q Factors ◽  
Quality Factor Q

This work reports a novel silicon on insulator (SOI)-based high quality factor (Q factor) Lamé-mode bulk resonator which can be driven into vibration by a bias voltage as low as 3 V. A SOI-based fabrication process was developed to produce the resonators with 70 nm air gaps, which have a high resonance frequency of 51.3 MHz and high Q factors over 8000 in air and over 30,000 in vacuum. The high Q values, nano-scale air gaps, and large electrode area greatly improve the capacitive transduction efficiency, which decreases the bias voltage for the high-stiffness bulk mode resonators with high Q. The resonator showed the nonlinear behavior. The proposed resonator can be applied to construct a wireless communication system with low power consumption and integrated circuit (IC) integration.

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