Characterization of Enhanced Perimeter Leakage in MOS Structures Following Ion Implantation

M. G. Stinson; C. M. Osburn

doi:10.1149/1.2086728

Characterization of Enhanced Perimeter Leakage in MOS Structures Following Ion Implantation

Journal of The Electrochemical Society ◽

10.1149/1.2086728 ◽

1990 ◽

Vol 137 (5) ◽

pp. 1564-1572 ◽

Cited By ~ 5

Author(s):

M. G. Stinson ◽

C. M. Osburn

Keyword(s):

Ion Implantation ◽

Mos Structures

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Optical, electrical, and chemical characterization of nanostructured InxGa1-xN formed by high fluence In+ ion implantation into GaN

Optical Materials ◽

10.1016/j.optmat.2020.110541 ◽

2020 ◽

pp. 110541

Author(s):

C.A. Hernández-Gutiérrez ◽

Yuriy Kudriavtsev ◽

Dagoberto Cardona ◽

A.G. Hernández ◽

J.L. Camas-Anzueto

Keyword(s):

Ion Implantation ◽

Chemical Characterization ◽

High Fluence

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Fourier transform infra-red characterization of carbon onions produced by carbon-ion implantation

Chemical Physics Letters ◽

10.1016/s0009-2614(98)00020-7 ◽

1998 ◽

Vol 285 (3-4) ◽

pp. 216-220 ◽

Cited By ~ 19

Author(s):

T. Cabioc'h ◽

A. Kharbach ◽

A. Le Roy ◽

J.P. Rivière

Keyword(s):

Fourier Transform ◽

Ion Implantation ◽

Carbon Ion ◽

Infra Red ◽

Carbon Onions

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The formation and characterization of optical waveguide in Nd:YLF crystal by 4.5-MeV Si ion implantation

Physica B Condensed Matter ◽

10.1016/j.physb.2018.10.017 ◽

2019 ◽

Vol 552 ◽

pp. 209-213 ◽

Cited By ~ 3

Author(s):

Xiao-Xiao Song ◽

Yao Wang ◽

Song Li ◽

Chuan-Lei Jia

Keyword(s):

Ion Implantation ◽

Optical Waveguide ◽

Si Ion Implantation

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Fabrication and Characterization of InGaN-Based Green Resonant Cavity Light-Emitting Diodes Using H+ Ion-Implantation

ECS Transactions ◽

10.1149/1.2731183 ◽

2019 ◽

Vol 6 (2) ◽

pp. 183-190

Author(s):

Ray-Hua Horng ◽

Shih Yung Huang ◽

Hao-Chung Kuo ◽

Dong Sing Wuu

Keyword(s):

Ion Implantation ◽

Light Emitting Diodes ◽

Resonant Cavity ◽

Light Emitting ◽

Fabrication And Characterization

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Electrical and optical characterization of defect levels caused in InGaAs by boron ion implantation

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ◽

10.1016/0168-583x(93)96197-k ◽

1993 ◽

Vol 80-81 ◽

pp. 632-635

Author(s):

Shin'ichi Yamamura ◽

Tadamasa Kimura ◽

Shigemi Yugo ◽

Riichiro Saito ◽

Michio Murata ◽

...

Keyword(s):

Ion Implantation ◽

Optical Characterization ◽

Defect Levels

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Creation and Characterization of Buried Microstructures in Diamond by Ion Implantation

2006 International Conference on Nanoscience and Nanotechnology ◽

10.1109/iconn.2006.340617 ◽

2006 ◽

Author(s):

M.A. Draganskia ◽

P. Olivero ◽

S. Rubanov ◽

P. Spizziri ◽

P.N. Johnston ◽

...

Keyword(s):

Ion Implantation

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Characterization of a Thermal Oxidation Process on SiC Preamorphized by Ar Ion Implantation

Materials Science Forum ◽

10.4028/www.scientific.net/msf.457-460.1357 ◽

2004 ◽

Vol 457-460 ◽

pp. 1357-1360 ◽

Cited By ~ 1

Author(s):

Antonella Poggi ◽

Roberta Nipoti ◽

Sandro Solmi ◽

M. Bersani ◽

L. Vanzetti

Keyword(s):

Ion Implantation ◽

Thermal Oxidation ◽

Oxidation Process ◽

Thermal Oxidation Process

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Characterization of Ion Implantation Damage in Capless Annealed GaAs

MRS Proceedings ◽

10.1557/proc-27-365 ◽

1983 ◽

Vol 27 ◽

Cited By ~ 1

Author(s):

H. Kanber ◽

M. Feng ◽

J. M. Whelan

Keyword(s):

Ion Implantation ◽

Annealing Temperature ◽

Rutherford Backscattering ◽

Buffer Layers ◽

Electrical Activation ◽

Controlled Atmosphere ◽

Damage Characteristics ◽

Implantation Damage ◽

Implantation Process

ABSTRACTArsenic and argon implantation damage is characterized by Rutherford backscattering in GaAs undoped VPE buffer layers grown on Cr-O doped semi-insulating substrates and capless annealed in a H2 −As4 atmosphere provided by AsH3. The damage detected in the RBS channeled spectra varies as a function of the ion mass, the implant depth and the annealing temperature of the stress-free controlled atmosphere technique. This damage is discussed in terms of the stoichiometric disturbances introduced by the implantation process. The as-implanted and annealed damage characteristics of the Ar and As implants are correlated to the electrical activation characteristics of Si and Se implants in GaAs, respectively.

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