Interest of 0.15 μm gate length InGaAs/InP composite channel HEMTs for millimeter-wave MMIC amplifiers

IEEE MTT/ED/AP/LEO Societies Joint Chapter United Kingdom and Republic of Ireland Section. 1997 Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat. No.97TH8305) ◽

10.1109/edmo.1997.668598 ◽

2002 ◽

Cited By ~ 1

Author(s):

P. Chevalier ◽

F. Dessenne ◽

M. Badirou ◽

J.L. Thobel ◽

R. Fauquembergue

Keyword(s):

Millimeter Wave ◽

Gate Length ◽

Composite Channel

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Wide-band millimeter wave characterization of sub-0.2 micrometer gate-length AlInAs/GaInAs HEMTs

IEEE Microwave and Guided Wave Letters ◽

10.1109/75.80704 ◽

1991 ◽

Vol 1 (2) ◽

pp. 32-34 ◽

Cited By ~ 13

Author(s):

M. Matloubian ◽

S.E. Rosenbaum ◽

H.R. Fetterman ◽

P.T. Greiling

Keyword(s):

Millimeter Wave ◽

Wide Band ◽

Gate Length

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Comparative assessment of InGaAs sub-channel and InAs composite channel double gate (DG)-HEMT for sub-millimeter wave applications

AEU - International Journal of Electronics and Communications ◽

10.1016/j.aeue.2017.10.029 ◽

2018 ◽

Vol 83 ◽

pp. 462-469 ◽

Cited By ~ 8

Author(s):

Saravana Kumar Radhakrishnan ◽

Baskaran Subramaniyan ◽

Mohanbabu Anandan ◽

Mohankumar Nagarajan

Keyword(s):

Millimeter Wave ◽

Comparative Assessment ◽

Double Gate ◽

Composite Channel ◽

Inas Composite Channel

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High-efficiency 0.25- mu m gate-length pseudomorphic power heterostructure FETs at millimeter-wave frequencies

IEEE Transactions on Electron Devices ◽

10.1109/16.43730 ◽

1989 ◽

Vol 36 (11) ◽

pp. 2616-2617

Author(s):

L.F. Lester ◽

M.-Y. Kao ◽

P. Ho ◽

D.W. Ferguson ◽

R.P. Smith ◽

...

Keyword(s):

Millimeter Wave ◽

High Efficiency ◽

Gate Length ◽

Heterostructure Fets

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Effect of gate length variation on DC performance of Ino.7Gao.3As/InAs/Ino.7Gao.3As composite channel HEMT

2015 IEEE International Conference on Computer Graphics, Vision and Information Security (CGVIS) ◽

10.1109/cgvis.2015.7449918 ◽

2015 ◽

Cited By ~ 1

Author(s):

Dilip Jaiswal ◽

Nandkishor Chavan ◽

Kulshrestha ◽

Hemant Pardeshi

Keyword(s):

Length Variation ◽

Gate Length ◽

Composite Channel

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Effect of gate length on the performance of InGaAs/InAs/InGaAs composite channel DMDG-HEMT devices

2017 Devices for Integrated Circuit (DevIC) ◽

10.1109/devic.2017.8074041 ◽

2017 ◽

Author(s):

R. Ranjani ◽

R. Vaishnavi ◽

N. Mohankumar ◽

A. Mohanbabu

Keyword(s):

Gate Length ◽

Composite Channel

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Millimeter-wave high-power 0.25-/spl mu/m gate-length AlGaN/GaN HEMTs on SiC substrates

IEEE Microwave and Wireless Components Letters ◽

10.1109/lmwc.2003.810115 ◽

2003 ◽

Vol 13 (3) ◽

pp. 93-95 ◽

Cited By ~ 6

Author(s):

R.S. Schwindt ◽

V. Kumar ◽

A. Kuliev ◽

G. Simin ◽

J.W. Yang ◽

...

Keyword(s):

Millimeter Wave ◽

High Power ◽

Gate Length ◽

Gan Hemts

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0.33- mu m gate-length millimeter-wave InP-channel HEMTs with high f/sub 1/ and f/sub max/

IEEE Electron Device Letters ◽

10.1109/55.116925 ◽

1991 ◽

Vol 12 (9) ◽

pp. 483-485 ◽

Cited By ~ 25

Author(s):

L. Aina ◽

M. Burgess ◽

M. Mattingly ◽

J.M. O'Connor ◽

A. Meerschaert ◽

...

Keyword(s):

Millimeter Wave ◽

Gate Length

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Gate length scaling study of InAlAs/InGaAs/InAsP composite channel HEMTs

Solid-State Electronics ◽

10.1016/j.sse.2007.04.002 ◽

2007 ◽

Vol 51 (6) ◽

pp. 838-841 ◽

Cited By ~ 9

Author(s):

Dongmin Liu ◽

Mantu Hudait ◽

Yong Lin ◽

Hyeongnam Kim ◽

Steven A. Ringel ◽

...

Keyword(s):

Gate Length ◽

Composite Channel ◽

Length Scaling

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A narrow-channel, 0.2- mu m gate-length, double-quantum-well pseudomorphic MODFET with high power gain at millimeter-wave frequencies

IEEE Electron Device Letters ◽

10.1109/55.63011 ◽

1990 ◽

Vol 11 (11) ◽

pp. 493-495 ◽

Cited By ~ 1

Author(s):

G.M. Metze ◽

T.T. Lee ◽

J.F. Bass ◽

P.L. Laux ◽

H.C. Carlson ◽

...

Keyword(s):

Quantum Well ◽

Millimeter Wave ◽

High Power ◽

Narrow Channel ◽

Double Quantum ◽

Gate Length ◽

Power Gain ◽

Double Quantum Well

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Composite channel HEMTs for millimeter-wave power applications

Conference Proceedings. 1998 International Conference on Indium Phosphide and Related Materials (Cat. No.98CH36129) ◽

10.1109/iciprm.1998.712438 ◽

2002 ◽

Cited By ~ 2

Author(s):

P. Chevalier ◽

X. Wallart ◽

F. Mollot ◽

B. Bonte ◽

R. Fauquembergue

Keyword(s):

Millimeter Wave ◽

Wave Power ◽

Composite Channel

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