A narrow-channel, 0.2- mu m gate-length, double-quantum-well pseudomorphic MODFET with high power gain at millimeter-wave frequencies

G.M. Metze; T.T. Lee; J.F. Bass; P.L. Laux; H.C. Carlson; A.B. Cornfeld

doi:10.1109/55.63011

A narrow-channel, 0.2- mu m gate-length, double-quantum-well pseudomorphic MODFET with high power gain at millimeter-wave frequencies

IEEE Electron Device Letters ◽

10.1109/55.63011 ◽

1990 ◽

Vol 11 (11) ◽

pp. 493-495 ◽

Cited By ~ 1

Author(s):

G.M. Metze ◽

T.T. Lee ◽

J.F. Bass ◽

P.L. Laux ◽

H.C. Carlson ◽

...

Keyword(s):

Quantum Well ◽

Millimeter Wave ◽

High Power ◽

Narrow Channel ◽

Double Quantum ◽

Gate Length ◽

Power Gain ◽

Double Quantum Well

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830 nm high-power low-noise self-aligned AlGaAs/GaAs double-quantum-well lasers

Electronics Letters ◽

10.1049/el:19890935 ◽

1989 ◽

Vol 25 (20) ◽

pp. 1398 ◽

Cited By ~ 7

Author(s):

S. Ishikawa ◽

M. Nido ◽

K. Endo ◽

I. Komazaki ◽

K. Fukagai ◽

...

Keyword(s):

Quantum Well ◽

High Power ◽

Low Noise ◽

Quantum Well Lasers ◽

Double Quantum ◽

Double Quantum Well

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Millimeter wave mixing using plasmon and bolometric response in a double-quantum-well field-effect transistor

Applied Physics Letters ◽

10.1063/1.1851606 ◽

2005 ◽

Vol 86 (3) ◽

pp. 033501 ◽

Cited By ~ 45

Author(s):

Mark Lee ◽

M. C. Wanke ◽

J. L. Reno

Keyword(s):

Quantum Well ◽

Millimeter Wave ◽

Field Effect ◽

Field Effect Transistor ◽

Double Quantum ◽

Wave Mixing ◽

Double Quantum Well ◽

Well Field ◽

Effect Transistor ◽

Bolometric Response

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0.98-1.02 mu m strained InGaAs/AlGaAs double quantum-well high-power lasers with GaInP buried waveguides

IEEE Journal of Quantum Electronics ◽

10.1109/3.234456 ◽

1993 ◽

Vol 29 (6) ◽

pp. 1936-1942 ◽

Cited By ~ 37

Author(s):

S. Ishikawa ◽

K. Fukagai ◽

H. Chida ◽

T. Miyazaki ◽

H. Fujii ◽

...

Keyword(s):

Quantum Well ◽

High Power ◽

Double Quantum ◽

High Power Lasers ◽

Double Quantum Well

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Packaging of high power density double quantum well semiconductor laser array using double-side cooling technology

2011 12th International Conference on Electronic Packaging Technology and High Density Packaging ◽

10.1109/icept.2011.6066941 ◽

2011 ◽

Cited By ~ 1

Author(s):

Jingwei Wang ◽

Pu Zhang ◽

Lingling Xiong ◽

Xiaoning Li ◽

Zhenbang Yuan ◽

...

Keyword(s):

Quantum Well ◽

Semiconductor Laser ◽

Power Density ◽

High Power ◽

Double Quantum ◽

High Power Density ◽

Laser Array ◽

Double Quantum Well ◽

Cooling Technology

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Comparative Study of Single and Double Quantum Well AlGaN/GaN HEMT Structures for High Power GHz Frequency Application

Materials Today Proceedings ◽

10.1016/j.matpr.2017.06.377 ◽

2017 ◽

Vol 4 (9) ◽

pp. 10341-10345 ◽

Cited By ~ 2

Author(s):

Aboo Bakar Khan ◽

Mohammad Jawaid Siddiqui ◽

Syed Gulraze Anjum

Keyword(s):

Quantum Well ◽

Comparative Study ◽

High Power ◽

Double Quantum ◽

Gan Hemt ◽

Double Quantum Well

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1.02μm strained InGaAs/AlGaAs Double Quantum-Well High-Power Lasers with GaInP Buried Waveguides

13th IEEE International Semiconductor Laser Conference ◽

10.1109/islc.1992.763638 ◽

2005 ◽

Author(s):

Shin Ishikawa ◽

K. Fukagai ◽

T. Miyazaki ◽

H. Fujii ◽

Kenji Endo

Keyword(s):

Quantum Well ◽

High Power ◽

Double Quantum ◽

High Power Lasers ◽

Double Quantum Well

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Hole-tunneling Si0.82Ge0.18/Si asymmetric-double-quantum-well resonant tunneling diode with high resonance current and suppressed thermionic emission

Japanese Journal of Applied Physics ◽

10.35848/1347-4065/aba379 ◽

2020 ◽

Vol 59 (8) ◽

pp. 080903

Author(s):

Ayaka Shinkawa ◽

Minoru Wakiya ◽

Yuki Maeda ◽

Takahiro Tsukamoto ◽

Nobumitsu Hirose ◽

...

Keyword(s):

Quantum Well ◽

Resonant Tunneling ◽

Thermionic Emission ◽

Resonant Tunneling Diode ◽

Double Quantum ◽

High Resonance ◽

Tunneling Diode ◽

Double Quantum Well ◽

Resonance Current

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Optical absorption in the terahertz region in HgTe/HgCd(Mn)Te double quantum well structures with a topological phase and structural inversion asymmetry

Surface Science ◽

10.1016/j.susc.2020.121780 ◽

2021 ◽

Vol 706 ◽

pp. 121780

Author(s):

M. Marchewka ◽

P. Śliż

Keyword(s):

Optical Absorption ◽

Quantum Well ◽

Double Quantum ◽

Topological Phase ◽

Quantum Well Structures ◽

Terahertz Region ◽

Double Quantum Well ◽

Structural Inversion ◽

Inversion Asymmetry

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GaN/InGaN double quantum well (DQW) gate structure for GaN-on-Si based normally-off AlGaN/GaN high electron mobility transistors (HEMTs)

Materials Science in Semiconductor Processing ◽

10.1016/j.mssp.2021.106109 ◽

2021 ◽

Vol 135 ◽

pp. 106109

Author(s):

Debaleen Biswas ◽

Takuya Tsuboi ◽

Takashi Egawa

Keyword(s):

Quantum Well ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Double Quantum ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Double Quantum Well ◽

Gate Structure ◽

Gan On Si

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Characteristics of a Dilute Nitride InGaAsN Double Quantum Well Laser at 1047 nm

2020 IEEE 26th International Symposium for Design and Technology in Electronic Packaging (SIITME) ◽

10.1109/siitme50350.2020.9292223 ◽

2020 ◽

Author(s):

Andrei Dragulinescu ◽

Mihail Dumitrescu

Keyword(s):

Quantum Well ◽

Double Quantum ◽

Dilute Nitride ◽

Quantum Well Laser ◽

Double Quantum Well

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