Wide-band millimeter wave characterization of sub-0.2 micrometer gate-length AlInAs/GaInAs HEMTs

1991 ◽  
Vol 1 (2) ◽  
pp. 32-34 ◽  
Author(s):  
M. Matloubian ◽  
S.E. Rosenbaum ◽  
H.R. Fetterman ◽  
P.T. Greiling
Author(s):  
J.B. Posthill ◽  
R.P. Burns ◽  
R.A. Rudder ◽  
Y.H. Lee ◽  
R.J. Markunas ◽  
...  

Because of diamond’s wide band gap, high thermal conductivity, high breakdown voltage and high radiation resistance, there is a growing interest in developing diamond-based devices for several new and demanding electronic applications. In developing this technology, there are several new challenges to be overcome. Much of our effort has been directed at developing a diamond deposition process that will permit controlled, epitaxial growth. Also, because of cost and size considerations, it is mandatory that a non-native substrate be developed for heteroepitaxial nucleation and growth of diamond thin films. To this end, we are currently investigating the use of Ni single crystals on which different types of epitaxial metals are grown by molecular beam epitaxy (MBE) for lattice matching to diamond as well as surface chemistry modification. This contribution reports briefly on our microscopic observations that are integral to these endeavors.


2013 ◽  
Vol 28 (6) ◽  
pp. 671-676 ◽  
Author(s):  
Yu-Qing ZHANG ◽  
Li-Li ZHAO ◽  
Shi-Long XU ◽  
Chao ZHANG ◽  
Xiao-Ying CHEN ◽  
...  

Author(s):  
Xiaoxiong Gu ◽  
Duixian Liu ◽  
Yuta Hasegawa ◽  
Koichiro Masuko ◽  
Christian Baks ◽  
...  

2007 ◽  
Vol 54 (2) ◽  
pp. 86-92
Author(s):  
Kazutomo Abe ◽  
Naoto Kitahara ◽  
Daiju Sugiyama ◽  
Fumiko Morifuji ◽  
Mikio Higuchi ◽  
...  

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