A gallium arsenide overlapping-gate charge-coupled device

1985 ◽  
Vol 6 (5) ◽  
pp. 237-240 ◽  
Author(s):  
K.B. Nichols ◽  
B.E. Burke
Keyword(s):  
Gallium Arsenide ◽  
Charge Coupled Device ◽  
Gate Charge

Two-phase GaAs cermet-gate charge-coupled devices

1991 ◽  
Vol 69 (3-4) ◽  
pp. 224-228
Author(s):  
M. LeNoble ◽  
J. V. Cresswell ◽  
R. R. Johnson
Keyword(s):  
Charge Transfer ◽  
Electric Field ◽  
Electric Fields ◽  
Two Phase ◽  
Charge Coupled Device ◽  
Charge Coupled Devices ◽  
Band Limited ◽  
Gate Charge

A nonplanar 64-pixel, 2-phase GaAs cermet-gate charge-coupled device (CMCCD) and a planar 128-pixel, 2-phase GaAs CMCCD are described. The former device employs a castellation to provide the "built-in" electric field for controlling the flow of signal charge within the channel, whereas, the latter device uses externally applied electric fields to achieve this control. Both devices have been operated at 46 MHz, demonstrating charge transfer efficiencies of 0.996 and in excess of 0.999, respectively. The application of the planar 2-phase GaAs CMCCD in a 500 or 7.81 MHz transient digitizer module for acquisition and transfer of dc to 250 MHz band-limited signals will also be presented.

A two-phase GaAs cermet gate charge-coupled device

1990 ◽  
Vol 37 (8) ◽  
pp. 1796-1799 ◽  
Author(s):  
M. LeNoble ◽  
J.V. Cresswell ◽  
R.R. Johnson
Keyword(s):  
Two Phase ◽  
Charge Coupled Device ◽  
Gate Charge

Configurations For High Speed Gallium Arsenide Charge-Coupled Device Imagers

1985 ◽  
Vol 24 (1) ◽  
Author(s):  
P. B. Kosel ◽  
M. R. Wilson ◽  
J. T. Boyd ◽  
L. A. King
Keyword(s):  
Gallium Arsenide ◽  
High Speed ◽  
Charge Coupled Device

Performance characteristics of the offset-gate charge-coupled device

1975 ◽  
Vol 22 (2) ◽  
pp. 72-74 ◽  
Author(s):  
R.W. Bower ◽  
T.A. Zimmerman ◽  
A.M. Mohsen
Keyword(s):  
Performance Characteristics ◽  
Charge Coupled Device ◽  
Gate Charge

A Simple Algorithm for Despiking Raman Spectra

2018 ◽  
Author(s):  
Darren Whitaker ◽  
Kevin Hayes
Keyword(s):  
Moving Average ◽  
Simple Algorithm ◽  
Mathematical Concepts ◽  
Charge Coupled Device ◽  
Analytical Technique ◽  
Minimal Sample ◽  
Minimal Distortion ◽  
Molecular Specificity ◽  
Ccd Detectors ◽  
Average Filter

Raman Spectroscopy is a widely used analytical technique, favoured when molecular specificity with minimal sample preparation is required.<br>The majority of Raman instruments use charge-coupled device (CCD) detectors, these are susceptible to cosmic rays and as such multiple spurious spikes can occur in the measurement. These spikes are problematic as they may hinder subsequent analysis, particularly if multivariate data analysis is required. In this work we present a new algorithm to remove these spikes from spectra after acquisition. Specifically we use calculation of modified <i>Z</i> scores to locate spikes followed by a simple moving average filter to remove them. The algorithm is very simple and its execution is essentially instantaneous, resulting in spike-free spectra with minimal distortion of actual Raman data. The presented algorithm represents an improvement on existing spike removal methods by utilising simple, easy to understand mathematical concepts, making it ideal for experts and non-experts alike. <br>

Sign in / Sign up

Export Citation Format

Share Document