Configurations For High Speed Gallium Arsenide Charge-Coupled Device Imagers

P. B. Kosel; M. R. Wilson; J. T. Boyd; L. A. King

doi:10.1117/12.7973446

Configurations For High Speed Gallium Arsenide Charge-Coupled Device Imagers

Optical Engineering ◽

10.1117/12.7973446 ◽

1985 ◽

Vol 24 (1) ◽

Cited By ~ 1

Author(s):

P. B. Kosel ◽

M. R. Wilson ◽

J. T. Boyd ◽

L. A. King

Keyword(s):

Gallium Arsenide ◽

High Speed ◽

Charge Coupled Device

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Very High Speed Integrated Circuits/Gallium Arsenide Electronics for Aircraft Engine Controls

10.23919/acc.1988.4790024 ◽

1988 ◽

Author(s):

Mark A. Overstreet

Keyword(s):

Gallium Arsenide ◽

Integrated Circuits ◽

High Speed ◽

Aircraft Engine ◽

Very High

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Application Of The Frame-Transfer Charge-Coupled Device For High Speed Imaging

10.1117/12.969201 ◽

1989 ◽

Author(s):

W. J. Hiller ◽

T. A. Kowalewski

Keyword(s):

High Speed ◽

High Speed Imaging ◽

Charge Coupled Device

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Relative Analysis of GaAs, InSb, InP Using QWFET

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.984-985.1080 ◽

2014 ◽

Vol 984-985 ◽

pp. 1080-1084 ◽

Cited By ~ 1

Author(s):

T.D. Subash ◽

T. Gnanasekaran ◽

J. Jagannathan ◽

C. Divya

Keyword(s):

Gallium Arsenide ◽

Band Structure ◽

Indium Phosphide ◽

Low Power ◽

Indium Antimonide ◽

Electron Mobility ◽

High Speed ◽

Simulation Tool ◽

Saturation Velocity ◽

Relative Analysis

Indium Antimonide (InSb) has the greater electron mobility and saturation velocity of any semiconductor. Also InSb detectors are sensitive between 1–5 μm wavelengths and it belongs to III-V [13] component. In this paper we compare the InSb with some other major components like Indium Phosphide (InP) and Gallium Arsenide (GaAs) which are also from same III-V group. The analysis was made using the simulation tool TCAD and using the properties and band structure of those materials we compare InSb with InP and GaAs. The results we proposed shows that InSb is best for ultra high speed and very low power applications.

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