An enhancement mode Schottky barrier gate charge‐coupled device on a high electron mobility transistor structure

1982 ◽  
Vol 41 (9) ◽  
pp. 874-876
Author(s):  
Y. Z. Liu
Keyword(s):  
Schottky Barrier ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Transistor Structure ◽  
Charge Coupled Device ◽  
High Electron Mobility ◽  
Enhancement Mode ◽  
Gate Charge

Double δ-Doped Enhancement-Mode InGaP/AlGaAs/InGaAs Pseudomorphic High Electron Mobility Transistor for Linearity Application

2006 ◽  
Vol 45 (No. 35) ◽  
pp. L932-L934 ◽  
Author(s):  
Li-Hsin Chu ◽  
Heng-Tung Hsu ◽  
Edward-Yi Chang ◽  
Tser-Lung Lee ◽  
Sze-Hung Chen ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Enhancement Mode

Applications of GaN-Based High Electron Mobility Transistors in Large-Size Devices

2015 ◽  
Vol 764-765 ◽  
pp. 486-490
Author(s):  
Chih Hao Wang ◽  
Liang Yu Su ◽  
Finella Lee ◽  
Jian Jang Huang
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Saturation Current ◽  
High Electron Mobility ◽  
Enhancement Mode ◽  
Electron Mobility Transistors ◽  
Large Size ◽  
Novel Design

We demonstrate a novel design of large-size device in AlGaN/GaN high-electron-mobility transistor (HEMT). Depletion mode (D-mode) HEMTs and enhancement mode (E-mode) HEMTs are fabricated in our research. The saturation current of D-mode HEMTs is over 6A. By using Cascode structure, the D-mode HEMT becomes a normally-off device efficiently, and the threshold voltage of it rises from-7V to 2V. By using BCB (Benzocyclobutene) as the passivation, the E-mode HEMT shows an excellent characteristic. Also, when the VGS of the E-mode HEMT is over 9V, it still shows a good performance.

scholarly journals Ultrawide electrical tuning of light matter interaction in a high electron mobility transistor structure

2015 ◽  
Vol 5 (1) ◽  
Author(s):  
Shovon Pal ◽  
Hanond Nong ◽  
Sergej Markmann ◽  
Nadezhda Kukharchyk ◽  
Sascha R. Valentin ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Transistor Structure ◽  
High Electron Mobility ◽  
Matter Interaction ◽  
Light Matter Interaction

Analysis of strain and dislocation evolution during MOCVD growth of an AlGaN/GaN power high-electron-mobility transistor structure

2019 ◽  
Vol 58 (SC) ◽  
pp. SCCD26 ◽  
Author(s):  
Mikhail Rudinsky ◽  
Eugene Yakovlev ◽  
Roman Talalaev ◽  
Tomas Novak ◽  
Petr Kostelnik ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Transistor Structure ◽  
High Electron Mobility ◽  
Mocvd Growth
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