Advance Embedded Packaging for Power Discrete Device

2019 ◽  
Author(s):  
Jia Ren Huo ◽  
Guan Qiang Song ◽  
Jing Jiang ◽  
Tao Jun Wang ◽  
Ling Wen Kong
Keyword(s):  
Discrete Device

Optical characterization of silicon and sapphire surfaces as related to SOS discrete device performance

1982 ◽  
Vol 58 (1) ◽  
pp. 19-36 ◽  
Author(s):  
M.T. Duffy ◽  
P.J. Zanzucchi ◽  
W.E. Ham ◽  
J.F. Corboy ◽  
G.W. Cullen ◽  
...  
Keyword(s):  
Optical Characterization ◽  
Device Performance ◽  
Discrete Device

scholarly journals Automation Of An I-V Characterization System

2010 ◽  
Vol 8 (02) ◽  
Author(s):  
J. R. Noriega ◽  
A. Vera-Marquina ◽  
C. Acosta Enríquez
Keyword(s):  
Virtual Instrument ◽  
Electronic Devices ◽  
Research Work ◽  
Vlsi Design ◽  
Semiconductor Materials ◽  
Labview Software ◽  
Research And Teaching ◽  
Discrete Device ◽  
Programming Device

In this paper, an accurate I-V virtual instrument (VI) that has been developed to characterize electronic devices for research and teaching purposes is demonstrated. The virtual instrument can be used to highlight principles of measurement, instrumentation, fundamental principles of electronics, VI programming, device testing and characterization in wafer or discrete device level. It consists of a Keithley electrometer, model 6514, a programmable power supply BK Precision, model 1770, a Keithley source meter, model 2400-LV, an Agilent digital multimeter, model 34401, a PC computer and LabVIEW software. The instruments are interconnected using an IEEE 488 protocol. The characteristic VI devices graphs are generated from measured data previous computational processing. The instrument is used in basic courses of physical electronics as well as in advance curses of VLSI design and in research work for characterization of semiconductor materials and devices. This paper describes the VI instrument design, implementation and characterization experiments.

Heteroepitaxy of stable metallic phases on GaAs: identification of candidate phases by TEM

1987 ◽  
Vol 45 ◽  
pp. 322-325
Author(s):  
T. Sands
Keyword(s):  
Three Dimensional ◽  
Contact Structures ◽  
Discrete Device ◽  
Device Structures ◽  
Device Integration ◽  
Cscl Structure ◽  
The Many ◽  
The Relationship ◽  
Thermal Stability Of ◽  
The Ideal

The structural perfection and thermal stability of epitaxical silicide contacts provides silicon technology with the potential for three-dimensional device integration as well as novel discrete device structures. Furthermore, the detrimental effects of grain boundaries on film resistivity and interdiffusion are eliminated in these epitaxical contact structures. Similar benefits for GaAs technology may be expected if stable metallic phases that grow epitaxically on GaAs can be identified. Such structures would also represent the ideal configuration for understanding the relationship between interface structure and electronic transport properties of metal/compound semiconductor systems.The search for candidate metallic phases can be simplified by considering only those phases that are cubic with lattice parameters compatible with aо (GaAs) = 0.565 nm. Of the many cubic structure types, the CsCl structure is the most common among the transition metal MGa phases.

THE PROBLEM OF MINIMIZING THE PROBABILITY OF ACCIDENTS AT WELDING IN ROBOTIZED TECHNOLOGICAL COMPLEXES

2017 ◽  
pp. 21-30
Author(s):  
Dmitry Sergeevich Fominykh ◽  
Aleksey Sergeevich Bogomolov ◽  
Vladimir Andreevich Ivashchenko ◽  
Vadim Alekseevich Kushnikov ◽  
Alexander Fedorovich Rezchikov ◽  
...  
Keyword(s):  
Technological Process ◽  
Oriented Graph ◽  
Emergency Situation ◽  
Production Model ◽  
Robotic Welding ◽  
Logical Function ◽  
Emergency Situations ◽  
Industrial Enterprises ◽  
Comprehensive Plan ◽  
Discrete Device

The article studies the problems, mathematical models and algorithms that allow reducing the probability of emergency situations during welding in robotic complexes. Since the application of methods of the calculus of variations is difficult, the task is reduced to the development and verification of the implementation of a detailed comprehensive plan of measures to remove the emergency situation, leading to a shutdown of the technological process. A comprehensive plan of measures based on the causal relationship between the parameters of the process and the study of the experience of the dispatching personnel has been developed. The plan is presented in the form of an oriented graph in which the vertices are the activities of the plan, and the arcs determine their relationship and sequence of implementation. The conditions affecting the technological process and the implementation of the plan are presented in the form of a production model. To verify the implementation of the plan in accordance with the principles and conditions for their implementation, a logical function was developed and a circuit of a discrete device constructed according to this function was drawn up. By specifying the values of the function arguments, the possibility of implementing the plan can be checked at any time. In the article the scheme of introducing educational mathematics in the structure of the existing complex of technical controls of the robotized welding complex is presented. The algorithms of the solution at various time intervals are analyzed with the help of the information-logic scheme. The introduction of the developed models and algorithms in industrial enterprises using robotic welding systems allows to reduce the damage from emergency situations and shutdown of the technological process.

scholarly journals Backside Etching of GaAs Devices

1997 ◽  
Vol 5 (2) ◽  
pp. 18-19
Author(s):  
Jeffrey A. Mittereder
Keyword(s):  
Integrated Circuits ◽  
Failure Analysis ◽  
Integrated Circuit ◽  
Substrate Thickness ◽  
Microwave Integrated Circuits ◽  
Monolithic Microwave Integrated Circuits ◽  
The Past ◽  
Gaas Devices ◽  
Discrete Device

The following is a technique for analyzing the area underneath a GaAs integrated circuit or discrete device which may aid in failure analysis. This procedure has been used in the past by the microelectronics community, and it is reviewed here for GaAs monolithic microwave integrated circuits (MMICs) and discrete devices. Because it is a destructive method, we use it in our lab after all other testing is completed. The substrate thickness of the GaAs is ∼4 mils (25 μm).

Modeling Growth— a Discrete Approach

1984 ◽  
Vol 77 (4) ◽  
pp. 266-268
Author(s):  
Dan Kunkle ◽  
Charles I. Burch
Keyword(s):  
Educational System ◽  
Electronic Computer ◽  
Public Awareness ◽  
Continuous Variables ◽  
Discrete Approach ◽  
Discrete Device ◽  
Programming Courses ◽  
Modeling Growth

Computers have played an increasingly large and important role in our society in recent decades. This trend has resulted in a greater public awareness of computing, the introduction of programming courses throughout our educational system, and also a heightened interest in the mathematics of discrete (as opposed to continuously changing) processes. The electronic computer is an intrinsically discrete device, yet we typically think of applications of computers to the mathematics of continuous variables.

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