Hydrogen-Assisted Sputtering Growth of TiN on Ceramic Substrates

Titanium nitride (TiN) has mechanical and electrical characteristics applicable for very large scale integration (VLSI) and discrete electronic devices. This study assessed the effect of hydrogen on sputtering growth of TiN on ceramic substrates. Although ceramic substrate is used in discrete device applications due to its insulating property, ceramic is also porous and contains oxygen and water vapor gases, which can be incorporated into TiN films during growth. In addition, discrete devices are usually packaged in glass sealing at 700 °C, and reaction with the trapped gases can significantly degrade the quality of the TiN film. In order to evaluate ways to minimize the effects of these gases on TiN, hydrogen gas was introduced during sputtering growth. The main hypothesis was that the hydrogen gas would react with oxygen to lower the oxygen density in the vacuum chamber, which would suppress the effects of the trapped gases in the ceramic and ultimately improve the quality of the TiN film. Improvements in TiN quality were confirmed by X-ray diffraction (XRD), energy dispersive spectroscopy (EDS), and resistance measurements. During the glass-sealing process, N2-purging at 400 °C was effective at keeping the TiN in a low resistance state. These results show that introducing hydrogen gas during sputtering growth could solve the problems caused by ceramic substrates.

THE PROBLEM OF MINIMIZING THE PROBABILITY OF ACCIDENTS AT WELDING IN ROBOTIZED TECHNOLOGICAL COMPLEXES

The article studies the problems, mathematical models and algorithms that allow reducing the probability of emergency situations during welding in robotic complexes. Since the application of methods of the calculus of variations is difficult, the task is reduced to the development and verification of the implementation of a detailed comprehensive plan of measures to remove the emergency situation, leading to a shutdown of the technological process. A comprehensive plan of measures based on the causal relationship between the parameters of the process and the study of the experience of the dispatching personnel has been developed. The plan is presented in the form of an oriented graph in which the vertices are the activities of the plan, and the arcs determine their relationship and sequence of implementation. The conditions affecting the technological process and the implementation of the plan are presented in the form of a production model. To verify the implementation of the plan in accordance with the principles and conditions for their implementation, a logical function was developed and a circuit of a discrete device constructed according to this function was drawn up. By specifying the values of the function arguments, the possibility of implementing the plan can be checked at any time. In the article the scheme of introducing educational mathematics in the structure of the existing complex of technical controls of the robotized welding complex is presented. The algorithms of the solution at various time intervals are analyzed with the help of the information-logic scheme. The introduction of the developed models and algorithms in industrial enterprises using robotic welding systems allows to reduce the damage from emergency situations and shutdown of the technological process.