Electrical Characterization of High Performance Fine Pitch Interconnects in Silicon-Interconnect Fabric

Author(s):  
SivaChandra Jangam ◽  
Adeel Ahmed Bajwa ◽  
Kannan K Thankkappan ◽  
Premsagar Kittur ◽  
Subramanian Srikantes Iyer
2007 ◽  
Vol 30 (1) ◽  
pp. 142-147 ◽  
Author(s):  
Y. C. Chan ◽  
S. C. Tan ◽  
Nelson S. M. Lui ◽  
C. W. Tan

2015 ◽  
Vol 821-823 ◽  
pp. 436-439 ◽  
Author(s):  
Razvan Pascu ◽  
Gheorghe Pristavu ◽  
Gheorghe Brezeanu ◽  
Florin Draghici ◽  
Marian Badila ◽  
...  

The electrical behavior and stability of a temperature sensor based on 4H-SiC Schottky diodes using Ni2Si as Schottky contact, are investigated. The ideality factor and the barrier height were found to be strongly dependent on the post-annealing temperature of the Ni contact (which lead to the formation of Ni2Si). A nearly ideal Schottky device, with the barrier height approaching the high value of1.7eV, and a slight temperature dependence, was obtained after an annealing atTA=800°C.This high barrier height proves that Ni2Si is suitable as Schottky contact for temperature sensors, able to reliably operate up to450°C. Sensor sensitivity levels between1.00mV/°Cand2.70 mV/°Chave been achieved.


2014 ◽  
Vol 199 ◽  
pp. 291-300 ◽  
Author(s):  
Elizabeth Buitrago ◽  
Montserrat Fernández-Bolaños Badia ◽  
Yordan M. Georgiev ◽  
Ran Yu ◽  
Olan Lotty ◽  
...  

2006 ◽  
Vol 3 (1) ◽  
pp. 44-51
Author(s):  
M. Gospodinova ◽  
G. Nan ◽  
J. Thomas ◽  
R. Subraya ◽  
J. Held

A multilayer Fine-pitch Ball Grid Array (FBGA) Board-on-chip (BOC) memory package used for applications running at more than 1 Gbit/p/s has been characterized using S-(distributed) parameter measurements and three types of test chips made using state of the art technology. The low parasitics FBGA test board itself was characterized for frequencies up to 5 GHz (the frequency range of interest) with the transmission being greater than −0.12 dB below 5 GHz. S-parameter model simulation of the package itself indicated that the transmission was greater than −1.5 dB up to 5 GHz. Correlation between the S-parameter simulation and measurements for the package and fixture combined was acceptable - in the order of tenths of dB in the frequency range DC to 2.5 GHz. Comparison of the S-parameter model versus lumped (RLC) model in the frequency range from DC to 5 GHz showed that the lumped model can be used for frequencies up to 2.9 GHz. A high degree of correlation between simulation and measurement has been shown. The lumped model bandwidth has been assessed and its application limits for time domain signal integrity simulations have been evaluated.


AIP Advances ◽  
2015 ◽  
Vol 5 (12) ◽  
pp. 127240 ◽  
Author(s):  
J. Toušek ◽  
J. Toušková ◽  
Z. Remeš ◽  
R. Chomutová ◽  
J. Čermák ◽  
...  

2015 ◽  
Vol 582 ◽  
pp. 224-228 ◽  
Author(s):  
S. Oueslati ◽  
G. Brammertz ◽  
M. Buffière ◽  
H. ElAnzeery ◽  
O. Touayar ◽  
...  

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