Microstructure Simulation and Thermo-Mechanical Behavior Analysis of Copper Filled Through Silicon Vias Using Coupled Phase Field and Finite Element Methods

2017 ◽  
Author(s):  
Shui-Bao Liang ◽  
Chang-Bo Ke ◽  
Bin Li ◽  
Han-Jiang ◽  
Min-Bo Zhou ◽  
...  
Keyword(s):  
Finite Element ◽  
Mechanical Behavior ◽  
Behavior Analysis ◽  
Finite Element Methods ◽  
Phase Field ◽  
Through Silicon Vias ◽  
Microstructure Simulation ◽  
Silicon Vias

Microstructure simulation of grain growth in Cu through silicon vias using phase-field modeling

2015 ◽  
Vol 55 (5) ◽  
pp. 765-770 ◽  
Author(s):  
Nabi Nabiollahi ◽  
Nele Moelans ◽  
Mario Gonzalez ◽  
Joke De Messemaeker ◽  
Christopher J. Wilson ◽  
...  
Keyword(s):  
Grain Growth ◽  
Phase Field ◽  
Phase Field Modeling ◽  
Through Silicon Vias ◽  
Microstructure Simulation ◽  
Field Modeling ◽  
Silicon Vias

Electrical Performance of Through-Silicon Vias (TSVs) for High-Frequency 3D IC Integration Applications

2012 ◽  
Vol 2012 (1) ◽  
pp. 001221-001228 ◽  
Author(s):  
Jui-Feng Hung ◽  
John H. Lau ◽  
Peng-Shu Chen ◽  
Shih-Hsien Wu ◽  
Sheng-Che Hung ◽  
...  
Keyword(s):  
Finite Element ◽  
Analytical Model ◽  
High Frequency ◽  
Electrical Performance ◽  
Finite Element Analyses ◽  
Design Guideline ◽  
3D Ic ◽  
Through Silicon Vias ◽  
Time Domains ◽  
Silicon Vias

In this study, the electrical performance of a general TSV structure for high-frequency 3D IC integration applications is investigated. Emphasis is placed on the proposal of an analytical model and the analytical equations of a TSV with all its key parameters. Also, the model and equations are verified, both in the frequency and time domains, by more detailed finite element analyses. Finally, a TSV electrical design guideline is proposed.

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