Thermo-mechanical behavior of through silicon vias in a 3D integrated package with inter-chip microbumps

2011 ◽  
Author(s):  
Xi Liu ◽  
Qiao Chen ◽  
Venkatesh Sundaram ◽  
Margaret Simmons-Matthews ◽  
Kurt P. Wachtler ◽  
...  
Keyword(s):  
Mechanical Behavior ◽  
Through Silicon Vias ◽  
Silicon Vias

Effects of the microstructure of copper through-silicon vias on their thermally induced linear elastic mechanical behavior

2014 ◽  
Vol 10 (1) ◽  
pp. 281-292 ◽  
Author(s):  
Zhiyong Wu ◽  
Zhiheng Huang ◽  
Yucheng Ma ◽  
Hua Xiong ◽  
Paul P. Conway
Keyword(s):  
Mechanical Behavior ◽  
Through Silicon Vias ◽  
Thermally Induced ◽  
Linear Elastic ◽  
Silicon Vias

Failure and Stress Analysis of Cu TSVs Using GHz-Scanning Acoustic Microscopy and Scanning Infrared Polariscopy

2015 ◽  
Author(s):  
Ingrid De Wolf ◽  
Ahmad Khaled ◽  
Martin Herms ◽  
Matthias Wagner ◽  
Tatjana Djuric ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Stress Analysis ◽  
Rayleigh Waves ◽  
Acoustic Microscopy ◽  
Scanning Acoustic Microscopy ◽  
Through Silicon Vias ◽  
Stress Anisotropy ◽  
Silicon Vias ◽  
Ic Technology ◽  
Detection Of Defects

Abstract This paper discusses the application of two different techniques for failure analysis of Cu through-silicon vias (TSVs), used in 3D stacked-IC technology. The first technique is GHz Scanning Acoustic Microscopy (GHz- SAM), which not only allows detection of defects like voids, cracks and delamination, but also the visualization of Rayleigh waves. GHz-SAM can provide information on voids, delamination and possibly stress near the TSVs. The second is a reflection-based photoelastic technique (SIREX), which is shown to be very sensitive to stress anisotropy in the Si near TSVs and as such also to any defect affecting this stress, such as delamination and large voids.

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