High-speed flex-on-board assembly method using anisotropic conductive films (ACFs) combined with room temperature ultrasonic (US) bonding for high-density module interconnection in mobile phones

2011 ◽  
Author(s):  
Kiwon Lee ◽  
Sangmin Oh ◽  
Ilkka J. Saarinen ◽  
Lasse Pykari ◽  
Kyung-Wook Paik
Keyword(s):  
Mobile Phones ◽  
High Speed ◽  
Room Temperature ◽  
High Density ◽  
Conductive Films ◽  
Assembly Method

TEM study of phosphorus-implanted pseudomorphic Si0.88Ge0.12 on Si(100)

1995 ◽  
Vol 53 ◽  
pp. 468-469
Author(s):  
N. David Theodore ◽  
Donald Y.C Lie ◽  
J. H. Song ◽  
Peter Crozier
Keyword(s):  
Integrated Circuits ◽  
Heterojunction Bipolar Transistors ◽  
Integrated Circuit ◽  
High Speed ◽  
Room Temperature ◽  
Strain Relaxation ◽  
Bipolar Transistors ◽  
Sige Hbt ◽  
Integrated Circuit Manufacturing ◽  
Microstructural Behavior

SiGe is being extensively investigated for use in heterojunction bipolar-transistors (HBT) and high-speed integrated circuits. The material offers adjustable bandgaps, improved carrier mobilities over Si homostructures, and compatibility with Si-based integrated-circuit manufacturing. SiGe HBT performance can be improved by increasing the base-doping or by widening the base link-region by ion implantation. A problem that arises however is that implantation can enhance strain-relaxation of SiGe/Si.Furthermore, once misfit or threading dislocations result, the defects can give rise to recombination-generation in depletion regions of semiconductor devices. It is of relevance therefore to study the damage and anneal behavior of implanted SiGe layers. The present study investigates the microstructural behavior of phosphorus implanted pseudomorphic metastable Si0.88Ge0.12 films on silicon, exposed to various anneals.Metastable pseudomorphic Si0.88Ge0.12 films were grown ~265 nm thick on a silicon wafer by molecular-beam epitaxy. Pieces of this wafer were then implanted at room temperature with 100 keV phosphorus ions to a dose of 1.5×1015 cm-2.

Development of ATC for High Speed and High Density Commuter Line

2007 ◽  
Vol 127 (10) ◽  
pp. 1033-1042
Author(s):  
Tamio Okutani ◽  
Nobuyuki Nakamura ◽  
Hisato Araki ◽  
Shouji Irie ◽  
Hiroki Osa ◽  
...  
Keyword(s):  
High Speed ◽  
High Density

scholarly journals Multistage Asymmetric Rotors Coaxial Measurement Stacking Method Based on Minimization of Exciting Force

Symmetry ◽  
2021 ◽  
Vol 13 (6) ◽  
pp. 1054
Author(s):  
Yongmeng Liu ◽  
Yingjie Mei ◽  
Chuanzhi Sun ◽  
Pinghuan Xiao ◽  
Ruirui Li ◽  
...  
Keyword(s):  
Vibration Amplitude ◽  
High Speed ◽  
Geometric Error ◽  
Exciting Force ◽  
Propagation Model ◽  
Assembly Method ◽  
Geometric Center ◽  
Asymmetric Rotor ◽  
Rotor Equipment ◽  
Geometric Error Measurement

The unbalanced exciting force of high-speed rotary asymmetric rotor equipment is the main factor causing rotor vibration. In order to effectively suppress the vibration of the asymmetric rotor equipment, the paper establishes a multistage asymmetric rotor coaxial measurement stacking method that minimizes the exciting force. By analyzing the propagation process of the centroid of the multistage asymmetric rotor assembly and analyzing the relationship between the geometric center and the centroid of a single asymmetric rotor, a multistage asymmetric unbalanced rotor propagation model based on geometric center stacking is established. The genetic algorithm is used to optimize the unbalance of the multistage asymmetric rotors. Combined with the vibration principle under the exciting force, the vibration amplitude of the left bearing at different rotation speeds under the minimization of the exciting force and the random assembly phase is analyzed. Finally, the experimental asymmetric rotors are dynamically measured, combined with the asymmetric rotors’ geometric error measurement experiment. The experimental results confirm that the vibration amplitude of the assembly phase with the minimum exciting force is smaller than the vibration amplitude under the random assembly phase at three-speed modes, and the optimization rate reached 73.2% at 9000 rpm, which proves the effectiveness of the assembly method in minimizing the exciting force.

A flexible gate array for high speed and high density applications

2002 ◽  
Author(s):  
J. Gallia ◽  
R. Landers ◽  
Ching-Hao Shaw ◽  
T. Blake ◽  
W. Banzhaf
Keyword(s):  
High Speed ◽  
High Density ◽  
Gate Array

scholarly journals Experimental and Numerical Investigation of the ECAP Processed Copper: Microstructural Evolution, Crystallographic Texture and Hardness Homogeneity

Metals ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 607
Author(s):  
A. I. Alateyah ◽  
Mohamed M. Z. Ahmed ◽  
Yasser Zedan ◽  
H. Abd El-Hafez ◽  
Majed O. Alawad ◽  
...  
Keyword(s):  
Grain Size ◽  
Equal Channel Angular Pressing ◽  
Cross Section ◽  
Room Temperature ◽  
Pure Copper ◽  
High Density ◽  
Ecap Processing ◽  
Heterogeneous Distribution ◽  
Angular Pressing ◽  
Average Grain Size

The current study presents a detailed investigation for the equal channel angular pressing of pure copper through two regimes. The first was equal channel angular pressing (ECAP) processing at room temperature and the second was ECAP processing at 200 °C for up to 4-passes of route Bc. The grain structure and texture was investigated using electron back scattering diffraction (EBSD) across the whole sample cross-section and also the hardness and the tensile properties. The microstructure obtained after 1-pass at room temperature revealed finer equiaxed grains of about 3.89 µm down to submicrons with a high density of twin compared to the starting material. Additionally, a notable increase in the low angle grain boundaries (LAGBs) density was observed. This microstructure was found to be homogenous through the sample cross section. Further straining up to 2-passes showed a significant reduction of the average grain size to 2.97 µm with observable heterogeneous distribution of grains size. On the other hand, increasing the strain up to 4-passes enhanced the homogeneity of grain size distribution. The texture after 4-passes resembled the simple shear texture with about 7 times random. Conducting the ECAP processing at 200 °C resulted in a severely deformed microstructure with the highest fraction of submicron grains and high density of substructures was also observed. ECAP processing through 4-passes at room temperature experienced a significant increase in both hardness and tensile strength up to 180% and 124%, respectively.

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