Challenges of Cu wire bonding on low-k/Cu wafers with BOA structures

2010 ◽  
Author(s):  
Chu-Chung Lee ◽  
Leo M Higgins
Keyword(s):  
Wire Bonding ◽  
Low K

Challenges of Pd-coated Cu wire bonding on C65 Al bond pad low-k wafer with BOA structure

2011 ◽  
Author(s):  
Chan Kheng Jin ◽  
Ng Bee Poh Christine ◽  
Chong Mong Ting ◽  
Dan Swee Tong
Keyword(s):  
Wire Bonding ◽  
Low K

Wire-bonding process development for low-k materials

2005 ◽  
Vol 81 (1) ◽  
pp. 75-82 ◽  
Author(s):  
Jonathan Tan ◽  
Zhao Wei Zhong ◽  
Hong Meng Ho
Keyword(s):  
Process Development ◽  
Wire Bonding ◽  
Bonding Process ◽  
Low K

Fine pitch copper wire bonding on 45nm tech Cu/low-k chip with different bond pad metallurgy

2011 ◽  
Author(s):  
Leong Ching Wai ◽  
Norhanani Binte Jaafar ◽  
Michelle Chew ◽  
Sivakumar ◽  
Gunasekaran ◽  
...  
Keyword(s):  
Copper Wire ◽  
Wire Bonding ◽  
Fine Pitch ◽  
Copper Wire Bonding ◽  
Low K

To Study the High Temperature Effects on Ball Bonds Using Low K Material in Wire Bond Devices

2007 ◽  
Author(s):  
S. A. Kudtarkar ◽  
R. Murcko ◽  
K. Srihari ◽  
S. Saiyed
Keyword(s):  
High Temperature ◽  
Mechanical Stability ◽  
Semiconductor Industry ◽  
Gold Wire ◽  
Wire Bonding ◽  
Mechanical Stresses ◽  
Wire Bond ◽  
Ball Bonds ◽  
Bond Pads ◽  
Low K

Wire bonding is widely used as one of the main interconnect alternatives. This technique applies significant mechanical stresses on the bond pads along with heat and ultrasonic energy to form a bond. An interconnection of copper plus low k material has been a focus of the semiconductor industry with the goal of reducing interconnection delays. The material is below the wire bond pads and complicates the mechanical stability of the device during wire bonding. The low k materials that are suggested are very sensitive to these mechanical stresses. This generates a significant reliability concern for the underlying metal structures. In addition, the integrity of the bond formed may be negatively impacted from a reliability perspective because of the softer material properties of the dielectric. This research explores the ball bond integrity for die with SiO2 and low k dielectric underlying material respectively, using 0.8 mil thick (20 microns) gold wire. Accelerated tests, such as high temperature storage at 150°C and 175°C, were conducted to assess the reliability of these bonds. The results of this investigation reveal that the ball bond’s strength degrades after high temperature tests due to the occurrence of Kirkendall voids between the gold wire and the aluminum bond pad. The degradation recorded was more severe for regular die than its low k counterpart.

C45 ultra low k wafer technology with Cu wire bonding

2010 ◽  
Author(s):  
Eu Poh Leng ◽  
Chin Teik Siong ◽  
Lee Boon Seong ◽  
Philip Leong ◽  
Gunasekaran ◽  
...  
Keyword(s):  
Wire Bonding ◽  
Low K
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