Advanced decoupling in high performance IC packaging

2004 ◽  
Author(s):  
D. Mannath ◽  
L.W. Schaper ◽  
R.K. Ulrich
Keyword(s):  
High Performance ◽  
Ic Packaging

SiP(System in Package) Solutions with Wafer Level Packaging Technology

2011 ◽  
Vol 2011 (DPC) ◽  
pp. 002226-002253 ◽  
Author(s):  
In Soo Kang ◽  
Jong Heon (Jay) Kim
Keyword(s):  
Embedded System ◽  
High Performance ◽  
Low Cost ◽  
Wafer Level ◽  
Molding Compound ◽  
Wafer Level Packaging ◽  
Ic Packaging ◽  
Chip Size ◽  
Bonding Technology ◽  
Small Form Factor

In mobile application, the WLP technology has been developing to make whole package size almost same as chip size. However, the I/O per chip unit area has increased so that it gets difficult to realize ideal pad pitch for better reliability. Recently, to achieve the thin and small size, high performance and low cost semiconductor package, Embedding Die and Fanout Technologies have been suggested and developed based on wafer level processing. In this work, as a solution of system in package, wafer level embedded package and fanout technology will be reviewed. Firstly, Wafer level embedded System in Package (WL-eSiP) which has daughter chip (small chip) embedded inside mother chip (bigger chip) without any special substrate has been suggested and developed. To realize wafer level embedded system in package (WL-eSiP), wafer level based new processes like wafer level molding for underfilling and encapsulation by molding compound without any special substrate have been applied and developed, including high aspect ratio Cu bumping, mold thinning and chip-to-wafer flipchip bonding. Secondly, Fan-out Package is considered as alternative package structure which means merged package structure of WLCSP (wafer level chip size package) and PCB process. We can make IC packaging widen area for SIP(System in Package) or 3D package. In addition, TSV and IPD are key enabling technology to meet market demands because TSV interconnection can provide wider bandwidth and high transmission speed due to vertical one compared to wire bonding technology and IPD can provide higher performance, more area saving to be assembled and small form factor compared to discrete passive components.

Stitch Bonding Strength of Cu Wire on AuAg/Pd/Ni Preplated Cu Leadframes: Influence of AuAg Thickness

2015 ◽  
Vol 761 ◽  
pp. 364-368 ◽  
Author(s):  
Sock Chien Tey ◽  
Kok Tee Lau ◽  
Mohd Hafizul Mohamad Noor ◽  
Yon Loong Tham ◽  
Mohd Edeerozey Abd Manaf
Keyword(s):  
Integrated Circuit ◽  
High Performance ◽  
Semiconductor Industry ◽  
Diffusion Mechanism ◽  
High Hardness ◽  
Wire Bonding ◽  
Automotive Application ◽  
Tin Whisker ◽  
Bonding Property ◽  
Ic Packaging

Copper (Cu) wire bonding on the pre-plated leadframes with Ni/Pd/AuAg plating has been applied extensively in the semiconductor industry for the interconnection of integrated-circuit (IC) packaging due to the lower material cost of Cu and its excellent electrical properties. Furthermore, the Cu wire bonding on the preplated leadframe has advantages, such as the tin whisker prevention and the robust package for automotive application. Nevertheless, a stitch bondability of Cu wire-preplated leadframe is facing several challenges, such as the Cu oxidation, the high hardness of Cu wire and the very thin AuAg plating on the leadframes. This paper discusses the effect of AuAg plating thickness in roughened pre-plated leadframe on the stitch bonding of Cu wires with the leadframe. The stitch bonding integrity was assessed using Dage 4000 shear/pull tool at a key wire bond responses of stitch pull at time zero (T0). Results show that the stitch pull strength of the Cu-leadframe stitch bonding increases with the increase thickness of AuAg layer. FESEM images of the stitch bonding between the Cu wires and the pre-plated leadframes of different AuAg plating thickness did not show any defect in microstructures, thus it suggests that the bonding property is determined by diffusion mechanism at the Cu wire/AuAg stitch bonding interface. Finally, a brief discussion is provided on the stitch bondability of high performance Au-flashed palladium-coated copper wires on the pre-plated leadframe with different AuAg thickness.

Spheron Fan-In WLCSP Technology Qualification and Scale Up - 200 mm to 300 mm

2013 ◽  
Vol 2013 (DPC) ◽  
pp. 000471-000494
Author(s):  
Andre Cardoso ◽  
Rui Almeida ◽  
Felandorio Fernandes ◽  
Ted Tessier ◽  
Anthony Curtis
Keyword(s):  
Crucial Role ◽  
High Performance ◽  
Scale Up ◽  
High Density ◽  
Technology Licensing ◽  
Ic Packaging ◽  
Wafer Processing ◽  
Unit Reduction

Overview: Fan-In WLP plays crucial role on today's high density, high performance IC Packaging. 300 mm wafer processing addresses cost-per-unit reduction and volume demand. Results of Spheron Fan-In WLCSP Technology Qualification and 200 mm to 300 mm Scale Up at Nanium, using FlipChipInternational Technology Licensing

Recent Advances in Thin Film Multilayer Interconnect Technology for IC Packaging

1987 ◽  
Vol 108 ◽  
Author(s):  
Ronald J. Jensen
Keyword(s):  
Thin Film ◽  
Recent Work ◽  
High Performance ◽  
High Density ◽  
High Conductivity ◽  
Packaging Technology ◽  
Ic Packaging ◽  
The Stability ◽  
Work Done ◽  
Interconnect Technology

ABSTRACTA high-performance packaging technology being developed at Honeywell and a number of other companies uses thin-film processes to pattern high-density interconnections in multiple layers of a high-conductivity conductor (e.g., copper) and a polymer dielectric, primarily polyimide. This paper describes the physical characteristics and unique advantages of this thin film multilayer (TFML) interconnect technology; it then summarizes the results of recent work done at Honeywell in processing TFML structures, assessing the stability and reliability of the materials system, and fabricating test vehicles and demonstration packages.

What is driving the 3D TSV technologies business: Market update and technical trends

2017 ◽  
Vol 2017 (DPC) ◽  
pp. 1-34
Author(s):  
Santosh Kumar ◽  
Thibault Buisson
Keyword(s):  
High Performance ◽  
Enabling Technology ◽  
Rf Filters ◽  
Business Market ◽  
Ic Packaging ◽  
Function Integration ◽  
Silicon Vias ◽  
Near Future ◽  
Performance Computing ◽  
3D Memory

Through-silicon vias (TSVs) have now become the preferred interconnect choice for high-end memory. They are also an enabling technology for heterogeneous integration of logic circuits with CIS, MEMS, sensors, and RF filters. In the near future they will also enable photonics and LED function integration. The market for 3D TSV and 2.5D interconnect is expected to reach around 2.1 million wafers in 2021, expanding at an 18% CAGR. The growth is driven by increased adoption of 3D memory devices in high-end graphics, high-performance computing, networking and data centers, and penetration into new areas, including fingerprint and ambient light sensors, RF filters and LEDs. CIS still commanded more than 80% share of TSV market wafer volume in 2015, although this will decrease to around 56% by 2021. This is primarily due to the growth of the other TSV applications, led by 3D memories, RF filters and fingerprint sensors. However, hybrid stacked technology, which uses direct copper-copper bonding, not TSVs, will penetrate around 38% of CIS production by 2021. The presentation will explain the market's dynamics and give an overview of all segments and key markets of the TSV based 3D/2.5D IC packaging.

A High Performance Energy Analyzer for Use in Electron Scanning Microscopy

1969 ◽  
Vol 27 ◽  
pp. 14-15
Author(s):  
A. V. Crewe ◽  
M. Isaacson ◽  
D. Johnson
Keyword(s):  
High Performance ◽  
Vertical Plane ◽  
Median Plane ◽  
Electron Gun ◽  
Uniform Field ◽  
Loss Mechanism ◽  
Electron Scanning Microscopy ◽  
Sector Type ◽  
Double Focusing ◽  
Electron Energy Loss

A double focusing magnetic spectrometer has been constructed for use with a field emission electron gun scanning microscope in order to study the electron energy loss mechanism in thin specimens. It is of the uniform field sector type with curved pole pieces. The shape of the pole pieces is determined by requiring that all particles be focused to a point at the image slit (point 1). The resultant shape gives perfect focusing in the median plane (Fig. 1) and first order focusing in the vertical plane (Fig. 2).

Vacuum System to Minimize the Specimen Contamination of High-Performance EM

1977 ◽  
Vol 35 ◽  
pp. 68-69
Author(s):  
N. Yoshimura ◽  
K. Shirota ◽  
T. Etoh
Keyword(s):  
Electron Microscope ◽  
High Speed ◽  
High Performance ◽  
High Vacuum ◽  
Vacuum System ◽  
Pump System ◽  
Pumping System ◽  
Diffusion Pump ◽  
Almost All ◽  
Cascade Type

One of the most important requirements for a high-performance EM, especially an analytical EM using a fine beam probe, is to prevent specimen contamination by providing a clean high vacuum in the vicinity of the specimen. However, in almost all commercial EMs, the pressure in the vicinity of the specimen under observation is usually more than ten times higher than the pressure measured at the punping line. The EM column inevitably requires the use of greased Viton O-rings for fine movement, and specimens and films need to be exchanged frequently and several attachments may also be exchanged. For these reasons, a high speed pumping system, as well as a clean vacuum system, is now required. A newly developed electron microscope, the JEM-100CX features clean high vacuum in the vicinity of the specimen, realized by the use of a CASCADE type diffusion pump system which has been essentially improved over its predeces- sorD employed on the JEM-100C.

Use of the Magnetostatic Analogue In Electromagnetic Lens Engineering

1970 ◽  
Vol 28 ◽  
pp. 360-361
Author(s):  
John W. Coleman
Keyword(s):  
Boundary Conditions ◽  
High Performance ◽  
Force Fields ◽  
Optical Design ◽  
Direct Conversion ◽  
Design Engineering ◽  
Design Data ◽  
Scalar Potentials ◽  
Geometric Elements ◽  
At Will

In the design engineering of high performance electromagnetic lenses, the direct conversion of electron optical design data into drawings for reliable hardware is oftentimes difficult, especially in terms of how to mount parts to each other, how to tolerance dimensions, and how to specify finishes. An answer to this is in the use of magnetostatic analytics, corresponding to boundary conditions for the optical design. With such models, the magnetostatic force on a test pole along the axis may be examined, and in this way one may obtain priority listings for holding dimensions, relieving stresses, etc..The development of magnetostatic models most easily proceeds from the derivation of scalar potentials of separate geometric elements. These potentials can then be conbined at will because of the superposition characteristic of conservative force fields.

Prospects for convergent beam electron diffraction with a 200kV cold field-emission transmission electron microscope

1991 ◽  
Vol 49 ◽  
pp. 466-467
Author(s):  
J W Steeds ◽  
R Vincent
Keyword(s):  
Field Emission ◽  
High Performance ◽  
Small Diameter ◽  
Convergent Beam Electron Diffraction ◽  
Zone Axis ◽  
Medium Voltage ◽  
Transmission Electron ◽  
Good Crystallinity ◽  
Special Modification ◽  
Convergent Beam

We review the analytical powers which will become more widely available as medium voltage (200-300kV) TEMs with facilities for CBED on a nanometre scale come onto the market. Of course, high performance cold field emission STEMs have now been in operation for about twenty years, but it is only in relatively few laboratories that special modification has permitted the performance of CBED experiments. Most notable amongst these pioneering projects is the work in Arizona by Cowley and Spence and, more recently, that in Cambridge by Rodenburg and McMullan.There are a large number of potential advantages of a high intensity, small diameter, focussed probe. We discuss first the advantages for probes larger than the projected unit cell of the crystal under investigation. In this situation we are able to perform CBED on local regions of good crystallinity. Zone axis patterns often contain information which is very sensitive to thickness changes as small as 5nm. In conventional CBED, with a lOnm source, it is very likely that the information will be degraded by thickness averaging within the illuminated area.

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