Methods and designs for improving the signal integrity for 3D electrical interconnects in high performance IC packaging

2011 ◽  
Author(s):  
Boping Wu ◽  
Haogang Wang
Keyword(s):  
High Performance ◽  
Signal Integrity ◽  
Electrical Interconnects ◽  
Ic Packaging

SiP(System in Package) Solutions with Wafer Level Packaging Technology

2011 ◽  
Vol 2011 (DPC) ◽  
pp. 002226-002253 ◽  
Author(s):  
In Soo Kang ◽  
Jong Heon (Jay) Kim
Keyword(s):  
Embedded System ◽  
High Performance ◽  
Low Cost ◽  
Wafer Level ◽  
Molding Compound ◽  
Wafer Level Packaging ◽  
Ic Packaging ◽  
Chip Size ◽  
Bonding Technology ◽  
Small Form Factor

In mobile application, the WLP technology has been developing to make whole package size almost same as chip size. However, the I/O per chip unit area has increased so that it gets difficult to realize ideal pad pitch for better reliability. Recently, to achieve the thin and small size, high performance and low cost semiconductor package, Embedding Die and Fanout Technologies have been suggested and developed based on wafer level processing. In this work, as a solution of system in package, wafer level embedded package and fanout technology will be reviewed. Firstly, Wafer level embedded System in Package (WL-eSiP) which has daughter chip (small chip) embedded inside mother chip (bigger chip) without any special substrate has been suggested and developed. To realize wafer level embedded system in package (WL-eSiP), wafer level based new processes like wafer level molding for underfilling and encapsulation by molding compound without any special substrate have been applied and developed, including high aspect ratio Cu bumping, mold thinning and chip-to-wafer flipchip bonding. Secondly, Fan-out Package is considered as alternative package structure which means merged package structure of WLCSP (wafer level chip size package) and PCB process. We can make IC packaging widen area for SIP(System in Package) or 3D package. In addition, TSV and IPD are key enabling technology to meet market demands because TSV interconnection can provide wider bandwidth and high transmission speed due to vertical one compared to wire bonding technology and IPD can provide higher performance, more area saving to be assembled and small form factor compared to discrete passive components.

Packaging and Integration Concept for High-Performance and Cost-effective IQM-based Transmitter Module for 160 Gb/s Applications

2011 ◽  
Vol 2011 (1) ◽  
pp. 000181-000188
Author(s):  
G. Delrosso ◽  
B. Curran ◽  
M. Rothermund ◽  
U. Maaß ◽  
H. Oppermann ◽  
...  
Keyword(s):  
High Performance ◽  
Flip Chip ◽  
Mechanical Design ◽  
Signal Integrity ◽  
Cost Effective ◽  
System Failure ◽  
Design Cycle ◽  
Quadrature Modulator ◽  
Integration Concept ◽  
Effective Speed

Photonic packaging and interconnection design of Polarization Multiplexed RZ-DQPSK format are actually gaining interests because of the urgent need to fit 100+ Gbit/s channels into existing DWDM systems, with the associated advantage to use driving electronics at the effective speed-rate needed for each driving port. However, packaging and integration of IQM (In-phase/Quadrature Modulator) chips for 100+Gb/s applications poses huge design and process challenges. In this contribution, we present a systematic concept for efficient and cost-effective packaging and integration of a 4 × 43 Gb/s Polmux RZ-DQPSK transmitter module for 160 Gb/s applications. This concept takes into consideration electrical and thermo-mechanical design challenges right at the beginning of the design cycle, so as to prevent any system failure or possible re-designs. The two InP IQM chips are flip-chip bonded on a BGA-based ceramic package, preserving signal integrity, simplifying routing and dramatically minimizing overall size and assembly costs.

Oriented graphene films for use as high-performance thermal and electrical interconnects

2008 ◽  
Author(s):  
Ali Moafi ◽  
Kevin Wong ◽  
Desmond Lau ◽  
Jim G. Partridge ◽  
Dougal G. McCulloch
Keyword(s):  
High Performance ◽  
Electrical Interconnects ◽  
Graphene Films

Stitch Bonding Strength of Cu Wire on AuAg/Pd/Ni Preplated Cu Leadframes: Influence of AuAg Thickness

2015 ◽  
Vol 761 ◽  
pp. 364-368 ◽  
Author(s):  
Sock Chien Tey ◽  
Kok Tee Lau ◽  
Mohd Hafizul Mohamad Noor ◽  
Yon Loong Tham ◽  
Mohd Edeerozey Abd Manaf
Keyword(s):  
Integrated Circuit ◽  
High Performance ◽  
Semiconductor Industry ◽  
Diffusion Mechanism ◽  
High Hardness ◽  
Wire Bonding ◽  
Automotive Application ◽  
Tin Whisker ◽  
Bonding Property ◽  
Ic Packaging

Copper (Cu) wire bonding on the pre-plated leadframes with Ni/Pd/AuAg plating has been applied extensively in the semiconductor industry for the interconnection of integrated-circuit (IC) packaging due to the lower material cost of Cu and its excellent electrical properties. Furthermore, the Cu wire bonding on the preplated leadframe has advantages, such as the tin whisker prevention and the robust package for automotive application. Nevertheless, a stitch bondability of Cu wire-preplated leadframe is facing several challenges, such as the Cu oxidation, the high hardness of Cu wire and the very thin AuAg plating on the leadframes. This paper discusses the effect of AuAg plating thickness in roughened pre-plated leadframe on the stitch bonding of Cu wires with the leadframe. The stitch bonding integrity was assessed using Dage 4000 shear/pull tool at a key wire bond responses of stitch pull at time zero (T0). Results show that the stitch pull strength of the Cu-leadframe stitch bonding increases with the increase thickness of AuAg layer. FESEM images of the stitch bonding between the Cu wires and the pre-plated leadframes of different AuAg plating thickness did not show any defect in microstructures, thus it suggests that the bonding property is determined by diffusion mechanism at the Cu wire/AuAg stitch bonding interface. Finally, a brief discussion is provided on the stitch bondability of high performance Au-flashed palladium-coated copper wires on the pre-plated leadframe with different AuAg thickness.

On-chip optical interconnects versus electrical interconnects for high-performance applications

2013 ◽  
Vol 112 ◽  
pp. 84-91 ◽  
Author(s):  
Michele Stucchi ◽  
Stefan Cosemans ◽  
Joris Van Campenhout ◽  
Zsolt Tőkei ◽  
Gerald Beyer
Keyword(s):  
Optical Interconnects ◽  
High Performance ◽  
Electrical Interconnects ◽  
On Chip
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