Process development of electroplate bumping for ULSI flip chip technology

2003 ◽  
Author(s):  
R. Kiumi ◽  
J. Yoshioka ◽  
F. Kuriyama ◽  
N. Saito ◽  
M. Shimoyama
Keyword(s):  
Flip Chip ◽  
Process Development ◽  
Chip Technology

Processing, Bumping and Assembly of Single Chip Plated Ni/Pd over ALCAP Bond Pads for Flip Chip Applications and Prototyping

2012 ◽  
Vol 2012 (DPC) ◽  
pp. 001841-001869
Author(s):  
Brian J. Lewis ◽  
Daniel F. Baldwin ◽  
Paul N. Houston ◽  
Le hang La ◽  
Tim Spark
Keyword(s):  
Flip Chip ◽  
Process Development ◽  
Single Chip ◽  
Flip Chips ◽  
Chip Technology ◽  
Development Cycle ◽  
Before And After ◽  
Selective Plating ◽  
Bond Pads ◽  
Comprehensive Study

For Designer and Engineers, it is common during the process development cycle for new products to have limitations on the materials that are available for the prototype work. Most SMT devices are readily available in different formats/solder alloys to satisfy most of the needs for passive needs. However, many times IC devices are limited to what is available from the fab or an IC broker. These limitations can mean that die only come in aluminum, wirebond ready I/O metallization or that the silicon wafers already sawn and in single die formats. For applications where advancement in performance or miniaturization is needed, and the benefits of flip chip technology are attractive, then it is not trivial to be able to use these die. In these cases, the process of adding solderable plating technologies to the I/O bond pads is very favorable. The technologies are currently run for wafer lever plating baths, but very little has been done to evaluate single chip plating. Work in plating Ni/Pd onto the ALCAP structure has been performed to evaluate the process and feasibility of processing groups of singulated die with aluminum bond pads. The work to be detailed in this paper will go through the chemistries used in the plating process onto an aluminum bond pad that makes it suitable for flip chip processes. Several bumping structures, such as solder bumping over this plating technology and plating over gold or copper stud bumps, are evaluated. A process for bumping the flip chips is also detailed. The data for shear testing of the 10 variations before and after 500 liquid thermal shock cycles is detailed. Finally, a comprehensive study for assembly of solder bumped flip chips, with the selective plating process, will be detailed as well as a detailed analysis of the TC reliability of this assembly approach. It will be shown that selective Ni/Pd plating onto single, ALCAP bare die can allow for these typical wirebond die can be used in a practical approach solder flip chip process and provide reasonable reliability results when compared to a mainstream, wafer processed, solder bumped flip chip die.

Applying system modeling to define 2.5 - d and 3 - d packaging roadmaps

2014 ◽  
Vol 2014 (DPC) ◽  
pp. 001983-002007
Author(s):  
Dev Gupta
Keyword(s):  
Flip Chip ◽  
Process Development ◽  
System Modeling ◽  
New Technology ◽  
Smart Phone ◽  
Cost Effective ◽  
High Volume ◽  
Organic Substrate ◽  
Chip Technology ◽  
D Modules

Though work on 3-d and later 2.5-d packaging has been going on now for over 5 years, we do not yet see large applications in areas other than traditional heterogeneous integration e,g. in camera modules. Adoption of 2.5-d Si interposer technology in 2010-11 to build FPGA modules on a commercial scale had generated much enthusiasm and expectation that floodgates will open for wide use of this technology e,g. in every Smart Phone but that has not yet materialized, giving rise to a shift in attention in Blogs and Conferences from purely digital applications e,g. processor - memory modules to more performance driven and cost insensitive applications e,g. heterogeneous modules for electro - optic I/O in servers etc. Roadmaps for emerging technologies like 3-d stacking or 2.5-d modules are developed taking process maturity into consideration but they must also anticipate major applications. Such applications using a new technology can succeed only if there are overwhelming advantages in performance and system cost that negate increases in module costs. When the author and his team developed electroplated solder bump flip chip technology and their high volume implementation at two of the leading IDMs over 2 decades ago, both performance ( electrical ) and cost modeling were used to short list applications most likely to succeed and limit process development only for those applications. Countless users & providers of flip chip technology since then have benefited from this original work on electroplated solder and pillar bumps as well as build up type organic substrate technologies. A similar theoretical approach is sorely needed in the development of 2.5-d and 3-d technologies to define the most cost - effective configurations and focus development work on only those. In this work we will discuss the Bandwidth and Power consumption ( two of the key drivers for die stacking ) of various 2.5-d and 3-d package configurations and based on simulation results compare them. Key takeaways : 3-d stacking of dice using TSVs may not necessarily produce improved performance compared to less complicated packaging. Expensive interposers with high interconnect density may not even be necessary for most volume applications. Most likely configurations for processor - memory 3-d modules to get good enough bandwidth at lowest cost.

Thin-Die Flip Chip Physical-FA Process Flow

2002 ◽  
Author(s):  
Andrew J. Komrowski ◽  
N. S. Somcio ◽  
Daniel J. D. Sullivan ◽  
Charles R. Silvis ◽  
Luis Curiel ◽  
...  
Keyword(s):  
Sample Preparation ◽  
Failure Analysis ◽  
Flip Chip ◽  
Semiconductor Industry ◽  
Organic Substrate ◽  
Fault Isolation ◽  
Preparation Methods ◽  
Chip Technology ◽  
Isolation Test ◽  
Sample Preparation Methods

Abstract The use of flip chip technology inside component packaging, so called flip chip in package (FCIP), is an increasingly common package type in the semiconductor industry because of high pin-counts, performance and reliability. Sample preparation methods and flows which enable physical failure analysis (PFA) of FCIP are thus in demand to characterize defects in die with these package types. As interconnect metallization schemes become more dense and complex, access to the backside silicon of a functional device also becomes important for fault isolation test purposes. To address these requirements, a detailed PFA flow is described which chronicles the sample preparation methods necessary to isolate a physical defect in the die of an organic-substrate FCIP.

Failure Analysis of Flip-Chip Interconnections Through Acoustic Microscopy

1996 ◽  
Author(s):  
O. Diaz de Leon ◽  
M. Nassirian ◽  
C. Todd ◽  
R. Chowdhury
Keyword(s):  
Failure Analysis ◽  
Large Scale ◽  
Flip Chip ◽  
Ultrasonic Waves ◽  
Acoustic Microscopy ◽  
Acoustic Microscope ◽  
Chip Technology ◽  
Ball Joints ◽  
Non Destructive ◽  
Scanning Acoustic Microscope

Abstract Integration of circuits on semiconductor devices with resulting increase in pin counts is driving the need for improvements in packaging for functionality and reliability. One solution to this demand is the Flip- Chip concept in Ultra Large Scale Integration (ULSI) applications [1]. The flip-chip technology is based on the direct attach principle of die to substrate interconnection.. The absence of bondwires clearly enables packages to become more slim and compact, and also provides higher pin counts and higher-speeds [2]. However, due to its construction, with inherent hidden structures the Flip-Chip technology presents a challenge for non-destructive Failure Analysis (F/A). The scanning acoustic microscope (SAM) has recently emerged as a valuable evaluation tool for this purpose [3]. C-mode scanning acoustic microscope (C-SAM), has the ability to demonstrate non-destructive package analysis while imaging the internal features of this package. Ultrasonic waves are very sensitive, particularly when they encounter density variations at surfaces, e.g. variations such as voids or delaminations similar to air gaps. These two anomalies are common to flip-chips. The primary issue with this package technology is the non-uniformity of the die attach through solder ball joints and epoxy underfill. The ball joints also present defects as open contacts, voids or cracks. In our acoustic microscopy study packages with known defects are considered. It includes C-SCAN analysis giving top views at a particular package interface and a B-SCAN analysis that provides cross-sectional views at a desired point of interest. The cross-section analysis capability gives confidence to the failure analyst in obtaining information from a failing area without physically sectioning the sample and destroying its electrical integrity. Our results presented here prove that appropriate selection of acoustic scanning modes and frequency parameters leads to good reliable correlation between the physical defects in the devices and the information given by the acoustic microscope.

scholarly journals Design and Switching Characteristics of Flip-Chip GaN Half-Bridge Modules Integrated with Drivers

2021 ◽  
Vol 11 (15) ◽  
pp. 7057
Author(s):  
Lin Wang ◽  
Zhe Cheng ◽  
Zhi-Guo Yu ◽  
De-Feng Lin ◽  
Zhe Liu ◽  
...  
Keyword(s):  
Flip Chip ◽  
High Electron Mobility Transistors ◽  
Wire Bonding ◽  
High Electron ◽  
Parasitic Inductance ◽  
Switching Performance ◽  
Turn On ◽  
Electron Mobility Transistors ◽  
Chip Technology ◽  
Switching Characteristics

Half-bridge modules with integrated GaN high electron mobility transistors (HEMTs) and driver dies were designed and fabricated in this research. Our design uses flip-chip technology for fabrication, instead of more generally applied wire bonding, to reduce parasitic inductance in both the driver-gate and drain-source loops. Modules were prepared using both methods and the double-pulse test was applied to evaluate and compare their switching characteristics. The gate voltage (Vgs) waveform of the flip-chip module showed no overshoot during the turn-on period, and a small oscillation during the turn-off period. The probabilities of gate damage and false turn-on were greatly reduced. The inductance in the drain-source loop of the module was measured to be 3.4 nH. The rise and fall times of the drain voltage (Vds) were 12.9 and 5.8 ns, respectively, with an overshoot of only 4.8 V during the turn-off period under Vdc = 100 V. These results indicate that the use of flip-chip technology along with the integration of GaN HEMTs with driver dies can effectively reduce the parasitic inductance and improve the switching performance of GaN half-bridge modules compared to wire bonding.

Monolithic Thin Film Red LED Active-matrix Micro-display by Flip-chip Technology

2021 ◽  
pp. 1-1
Author(s):  
Peian Li ◽  
Xu Zhang ◽  
Wing Cheung Chong ◽  
Kei May Lau
Keyword(s):  
Thin Film ◽  
Flip Chip ◽  
Active Matrix ◽  
Chip Technology ◽  
Red Led

Research on COB-LED light source with tunable CCT based on screen printing and flip chip technology

2022 ◽  
Vol 54 (2) ◽  
Author(s):  
Rongrong Zhang ◽  
Zuojie Wen ◽  
Bingqian Li ◽  
Shenghua Liang ◽  
Mingde Yang ◽  
...  
Keyword(s):  
Light Source ◽  
Screen Printing ◽  
Flip Chip ◽  
Led Light ◽  
Chip Technology
Sign in / Sign up

Export Citation Format

Share Document