A study of high density and reliability BGA package with solder ball lands of oval type

2002 ◽  
Author(s):  
S.J. Kim ◽  
C.H. Lee ◽  
S.G. Lee ◽  
A. Syed
Keyword(s):  
Solder Ball ◽  
High Density ◽  
Bga Package

Epoxy Underfill Challenges for Copper (Cu) Pillar Solder Bump Packages

2014 ◽  
Vol 2014 (1) ◽  
pp. 000247-000250
Author(s):  
Brian Schmaltz ◽  
Yukinari Abe ◽  
Kazuyuki Kohara
Keyword(s):  
Thermal Cycling ◽  
Solder Ball ◽  
Solder Bump ◽  
High Density ◽  
Lead Free ◽  
Reflow Process ◽  
Stress Concentrations ◽  
Cu Pillar ◽  
Advanced Packaging ◽  
Capillary Underfill

From Eutectic, to Lead Free, to Copper Pillar (Cu) Bumping Technologies. As technology progresses to smaller process generations, new packaging applications are being demanded. The standard solder ball reflow process is being pushed by advancements in copper pillar capped bumps, which in turn allows for high density lead free IO counts at sub 40um bump pitches. Even so, low CTE epoxy materials are still needed in order to dissipate stress concentrations seen during thermal cycling. What challenges await this next technological revision? This presentation will centralize around the latest advancements in epoxy materials for Advanced Packaging Technology; Capillary Underfill (CUF) for narrow pitch Lead Free Copper (Cu) Pillar Solder Bump packages.

Mechanical strength test method for solder ball joint in BGA package

2005 ◽  
Vol 11 (2) ◽  
pp. 121-129 ◽  
Author(s):  
Jong-Woong Kim ◽  
Dae-Gon Kim ◽  
Seung-Boo Jung
Keyword(s):  
Mechanical Strength ◽  
Solder Ball ◽  
Strength Test ◽  
Test Method ◽  
Ball Joint ◽  
Bga Package

scholarly journals Non-destructive Evaluation of Solder Ball Joints in BGA Package by Infrared Thermography

2005 ◽  
Vol 23 (3) ◽  
pp. 452-459
Author(s):  
Kazuya UENO ◽  
Shinobu SATONAKA ◽  
Naoto KIMURA ◽  
Jun SHIRASAKA ◽  
Tatsuya KOBAYASHI
Keyword(s):  
Infrared Thermography ◽  
Solder Ball ◽  
Non Destructive Evaluation ◽  
Bga Package ◽  
Ball Joints ◽  
Non Destructive

Versatility of Fan Out – Simple 2D to Complex 3D

2019 ◽  
Vol 2019 (DPC) ◽  
pp. 000165-000194
Author(s):  
John Hunt
Keyword(s):  
Flip Chip ◽  
Low Cost ◽  
Cellular Phone ◽  
High Density ◽  
Wafer Level ◽  
Mobile Cellular ◽  
Versatile Tool ◽  
Bga Package ◽  
Flip Chip Packaging ◽  
2D And 3D

Many mobile applications strive for the thinnest package possible, and therefore benefit from the high density of basic Fan Out technology. At the same time, Fan Out has evolved from a simple, single die packaging solution into a high-density solution enabling more complex 2D and 3D connectivity. Fan Out first went into volume manufacturing in 2009 with a simple, single die package using eWLB. For the next few years, it was only thought of in this context. Then in 2016, two packages came into production that broke this stereotype. The first was a hybrid, very high-density Fan Out combined with a BGA package called FOCoS for server applications. The second was a 3D PoP structure for mobile cellular phone applications called InFO. With these structures, Fan Out became a more versatile tool, capable of wider applicability. And since then, multiple manufacturers have continued the evolution of Fan Out's capabilities into more and more packaging opportunities. This presentation will illustrate how the integration of a wide variety of packaging technologies, wafer level processing, substrate evolution and Flip Chip packaging have all come together into both simple and complex packages structures. We will further explore the higher levels of integration and sophistication available using Fan Out as a basic manufacturing technology, describing the evolving functionality and complexity achieved by combining low cost materials and innovative process flows. By using such combinations of tools and processes, the resulting packages are only limited by our imagination and creativity.

High-Lead Solder Ball Characteristics in BGA Package

2002 ◽  
Author(s):  
Nicholas Kao ◽  
Y. P. Wang ◽  
C. S. Hsiao
Keyword(s):  
Shear Strength ◽  
Solder Joint ◽  
High Performance ◽  
Solder Ball ◽  
Solder Paste ◽  
Joint Performance ◽  
Ball Shear ◽  
Bga Package ◽  
Ball Shear Strength ◽  
High Lead

For high performance packages in mainframe systems such as networking switch, telecommunication equipments, higher reliability is always required. Using high-lead solder ball is an effective way to enhance the solder joint performance in board level. The elongation property of high-lead alloy Sn10/Pb90 is 10 times greater than eutectic Sn/Pb alloy. The high-lead ball has higher melting temperature, it can maintain the stand off (gap) between the package and PCB when eutectic solder paste melted at 220°C. In this study, the performances of high-lead solder Sn10/Pb90 and eutectic Sn63/Pb37 are compared. A series of experiments are performed to characterize the high-lead solder ball solder joint performance. The ball shear test parameters also affect high-lead solder ball strength, such as ram height and shear speed. Lower ram height and higher speed increases the ball shear strength value. Effect of different ball pad openings, solder paste volume and reflow profile for ball placement, is also discussed in this paper. the ratio of ball pad opening diameter to solder ball diameter is related to ball shear force. When the ratio is 0.83, the ball shear is better than other value. The most important factor to ball shear strength is the solder paste amount. However, the reflow condition (the time period over 183°C) isn’t the significant factor to affect the ball shear strength.

Planar defects in ordered (Ga,In)P

1988 ◽  
Vol 46 ◽  
pp. 902-903
Author(s):  
S. McKernan ◽  
C. B. Carter ◽  
D. Bour ◽  
J. R. Shealy
Keyword(s):  
Electron Diffraction ◽  
Vapor Phase ◽  
Growth Direction ◽  
High Density ◽  
Ordered Structure ◽  
Planar Defects ◽  
Diffraction Patterns ◽  
Ternary Semiconductors ◽  
Anion Species ◽  
Metallic Vapor

The growth of ternary III-V semiconductors by organo-metallic vapor phase epitaxy (OMVPE) is widely practiced. It has been generally assumed that the resulting structure is the same as that of the corresponding binary semiconductors, but with the two different cation or anion species randomly distributed on their appropriate sublattice sites. Recently several different ternary semiconductors including AlxGa1-xAs, Gaxln-1-xAs and Gaxln1-xP1-6 have been observed in ordered states. A common feature of these ordered compounds is that they contain a relatively high density of defects. This is evident in electron diffraction patterns from these materials where streaks, which are typically parallel to the growth direction, are associated with the extra reflections arising from the ordering. However, where the (Ga,ln)P epilayer is reasonably well ordered the streaking is extremely faint, and the intensity of the ordered spot at 1/2(111) is much greater than that at 1/2(111). In these cases it is possible to image relatively clearly many of the defects found in the ordered structure.

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