Accurate Analytical Switching Loss Model for High Voltage SiC MOSFETs Includes Parasitics and Body Diode Reverse Recovery Effects

2018 ◽  
Author(s):  
Soheila Eskandari ◽  
Kang Peng ◽  
Bo Tian ◽  
Enrico Santi
Keyword(s):  
High Voltage ◽  
Switching Loss ◽  
Loss Model

scholarly journals On the Practical Evaluation of the Switching Loss in the Secondary Side Rectifiers of LLC Converters

Energies ◽  
2021 ◽  
Vol 14 (18) ◽  
pp. 5915
Author(s):  
Manuel Escudero ◽  
Matteo-Alessandro Kutschak ◽  
Francesco Pulsinelli ◽  
Noel Rodriguez ◽  
Diego Pedro Morales
Keyword(s):  
Resonant Frequency ◽  
High Voltage ◽  
Low Voltage ◽  
Hysteresis Loss ◽  
Resonant Converters ◽  
Switching Loss ◽  
Operating Modes ◽  
Switching Losses ◽  
Series Resonant ◽  
Secondary Side

The switching loss of the secondary side rectifiers in LLC resonant converters can have a noticeable impact on the overall efficiency of the complete power supply and constrain the upper limit of the optimum switching frequencies of the converter. Two are the main contributions to the switching loss in the secondary side rectifiers: on the one hand, the reverse recovery loss (Qrr), most noticeably while operating above the series resonant frequency; and on the other hand, the output capacitance (Coss) hysteresis loss, not previously reported elsewhere, but present in all the operating modes of the converter (under and above the series resonant frequency). In this paper, a new technique is proposed for the measurement of the switching losses in the rectifiers of the LLC and other isolated converters. Moreover, two new circuits are introduced for the isolation and measurement of the Coss hysteresis loss, which can be applied to both high-voltage and low-voltage semiconductor devices. Finally, the analysis is experimentally demonstrated, characterizing the switching loss of the rectifiers in a 3 kW LLC converter (410 V input to 50 V output). Furthermore, the Coss hysteresis loss of several high-voltage and low-voltage devices is experimentally verified in the newly proposed measurement circuits.

scholarly journals Performance Analysis of Modified High Voltage Gain Boost Converter for PV-fed LED Lighting Applications

2019 ◽  
Vol 9 (1S3) ◽  
pp. 144-149
Keyword(s):  
High Voltage ◽  
Electromagnetic Interference ◽  
Light Emitting Diode ◽  
High Gain ◽  
Voltage Gain ◽  
Switching Loss ◽  
Led Lighting ◽  
High Voltage Gain ◽  
Efficient Performance ◽  
Continuous Current

Nowadays, the development of PV (Photo Voltaic)-fed LED (Light Emitting Diode) lighting technology is requires high gain ratios with efficient performance of the converter. The presented converter topology is non-isolated possess high gain voltage with low stress voltage. The design of the modified high voltage gain boost configuration is projected with continuous current at input, which is flexible to control. The conduction, switching loss at the switch, reverse recovery problem and electromagnetic interference are mitigated due to low duty cycle. But to explore the differentiation of their characteristics, advantages and several reasonable evaluations are carried out. The operating principle, theoretical analysis and experimental results of modified high gain step-up converter are provided for PV-fed LED lighting applications to verify the efficient performance in all aspects.

Source-Sense Packages for HV MOSFETs

2013 ◽  
Vol 2013 (1) ◽  
pp. 000770-000775
Author(s):  
Anders Lind
Keyword(s):  
Thermal Management ◽  
High Voltage ◽  
Power Loss ◽  
Drain Current ◽  
Switching Loss ◽  
Power Mosfet ◽  
Switching Power ◽  
Transition Speed ◽  
Separate Source ◽  
Die Temperature

In traditional 3-pin High-Voltage (HV) power MOSFET (MOSFET) packages, the hard-switching transition speed is limited by the package source-inductance because the MOSFET drain current and gate current both share a path through the same package source inductance. The details of this mechanism are discussed and the resulting additional switching power loss caused by it is both measured and simulated. Proposed innovative “Source-Sense” packages split the two currents into separate paths by adding separate source-pin for Kelvin-type driver connection to gate-source on the chip, thus completely eliminating all switching loss incurred by the source inductance for improved efficiency and lower die temperature. Leadless SMD packages employing this method are explored for further addressing complications caused by package source inductance, such as common-mode noise and requirement for filtering. Advanced package concepts are discussed for future optimization and thermal management, and versatility of these advanced concepts as well as existing leadless SMD packages with “Source-Sense” is examined.

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