Modeling capacitive non-linearities and displacement currents of high-voltage SuperJunction MOSFET in a novel analytical switching loss model

Author(s):  
Ignacio Castro ◽  
Diego G. Lamar ◽  
Jaume Roig ◽  
Filip Bauwens
2016 ◽  
Vol 31 (3) ◽  
pp. 2485-2495 ◽  
Author(s):  
Ignacio Castro ◽  
Jaume Roig ◽  
Ratmir Gelagaev ◽  
Basil Vlachakis ◽  
Filip Bauwens ◽  
...  

Electronics ◽  
2021 ◽  
Vol 10 (16) ◽  
pp. 2013
Author(s):  
Sheng Liu ◽  
Shuang Song ◽  
Ning Xie ◽  
Hai Chen ◽  
Xiaobo Wu ◽  
...  

This paper reveals the relationship between the Miller plateau voltage and the displacement currents through the gate–drain capacitance (CGD) and the drain–source capacitance (CDS) in the switching process of a power transistor. The corrected turn-on Miller plateau voltage and turn-off Miller plateau voltage are different even with a constant current load. Using the proposed new Miller plateau, the turn-on and turn-off sequences can be more accurately analyzed, and the switching power loss can be more accurately predicted accordingly. Switching loss models based on the new Miller plateau have also been proposed. The experimental test result of the power MOSFET (NCE2030K) verified the relationship between the Miller plateau voltage and the displacement currents through CGD and CDS. A carefully designed verification test bench featuring a power MOSFET written in Verilog-A proved the prediction accuracy of the switching waveform and switching loss with the new proposed Miller plateau. The average relative error of the loss model using the new plateau is reduced to 1/2∼1/4 of the average relative error of the loss model using the old plateau; the proposed loss model using the new plateau, which also takes the gate current’s variation into account, further reduces the error to around 5%.


Energies ◽  
2021 ◽  
Vol 14 (18) ◽  
pp. 5915
Author(s):  
Manuel Escudero ◽  
Matteo-Alessandro Kutschak ◽  
Francesco Pulsinelli ◽  
Noel Rodriguez ◽  
Diego Pedro Morales

The switching loss of the secondary side rectifiers in LLC resonant converters can have a noticeable impact on the overall efficiency of the complete power supply and constrain the upper limit of the optimum switching frequencies of the converter. Two are the main contributions to the switching loss in the secondary side rectifiers: on the one hand, the reverse recovery loss (Qrr), most noticeably while operating above the series resonant frequency; and on the other hand, the output capacitance (Coss) hysteresis loss, not previously reported elsewhere, but present in all the operating modes of the converter (under and above the series resonant frequency). In this paper, a new technique is proposed for the measurement of the switching losses in the rectifiers of the LLC and other isolated converters. Moreover, two new circuits are introduced for the isolation and measurement of the Coss hysteresis loss, which can be applied to both high-voltage and low-voltage semiconductor devices. Finally, the analysis is experimentally demonstrated, characterizing the switching loss of the rectifiers in a 3 kW LLC converter (410 V input to 50 V output). Furthermore, the Coss hysteresis loss of several high-voltage and low-voltage devices is experimentally verified in the newly proposed measurement circuits.


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