Source-Sense Packages for HV MOSFETs

2013 ◽  
Vol 2013 (1) ◽  
pp. 000770-000775
Author(s):  
Anders Lind
Keyword(s):  
Thermal Management ◽  
High Voltage ◽  
Power Loss ◽  
Drain Current ◽  
Switching Loss ◽  
Power Mosfet ◽  
Switching Power ◽  
Transition Speed ◽  
Separate Source ◽  
Die Temperature

In traditional 3-pin High-Voltage (HV) power MOSFET (MOSFET) packages, the hard-switching transition speed is limited by the package source-inductance because the MOSFET drain current and gate current both share a path through the same package source inductance. The details of this mechanism are discussed and the resulting additional switching power loss caused by it is both measured and simulated. Proposed innovative “Source-Sense” packages split the two currents into separate paths by adding separate source-pin for Kelvin-type driver connection to gate-source on the chip, thus completely eliminating all switching loss incurred by the source inductance for improved efficiency and lower die temperature. Leadless SMD packages employing this method are explored for further addressing complications caused by package source inductance, such as common-mode noise and requirement for filtering. Advanced package concepts are discussed for future optimization and thermal management, and versatility of these advanced concepts as well as existing leadless SMD packages with “Source-Sense” is examined.

scholarly journals Simulation-Based Power-Loss Optimization of General-Purpose High-Voltage SiC MOSFET Circuit Under High-Frequency Operation

IEEE Access ◽  
2021 ◽  
Vol 9 ◽  
pp. 23786-23794
Author(s):  
Abhishek Kar ◽  
Mitiko Miura-Mattausch ◽  
Mainak Sengupta ◽  
Dondee Navaroo ◽  
Hideyuki Kikuchihara ◽  
...  
Keyword(s):  
High Voltage ◽  
High Frequency ◽  
Power Loss ◽  
General Purpose ◽  
Simulation Based ◽  
High Frequency Operation

scholarly journals A novel hybrid thermal management approach towards high-voltage battery pack for electric vehicles

2021 ◽  
Vol 247 ◽  
pp. 114676
Author(s):  
Lu Jin ◽  
Jun Tian ◽  
Shen Gao ◽  
Peng Xie ◽  
Mohsen Akbarzadeh ◽  
...  
Keyword(s):  
Thermal Management ◽  
Electric Vehicles ◽  
High Voltage ◽  
Battery Pack ◽  
Management Approach ◽  
High Voltage Battery

scholarly journals Power MOSFET Linearizer of a High-Voltage Power Amplifier for High-Frequency Pulse-Echo Instrumentation

Sensors ◽  
2017 ◽  
Vol 17 (4) ◽  
pp. 764 ◽  
Author(s):  
Hojong Choi ◽  
Park Woo ◽  
Jung-Yeol Yeom ◽  
Changhan Yoon
Keyword(s):  
Power Amplifier ◽  
High Voltage ◽  
High Frequency ◽  
Power Mosfet ◽  
Pulse Echo ◽  
Frequency Pulse

scholarly journals Non-conventional Cascade Multilevel Inverter with Lower Number of Switches by Using Multilevel PWM

2021 ◽  
Vol 17 (1) ◽  
pp. 1-13
Author(s):  
Adala Abdali ◽  
Ali Abdulabbas ◽  
Habeeb Nekad
Keyword(s):  
High Voltage ◽  
High Power ◽  
Power Loss ◽  
Output Voltage ◽  
Lower Number ◽  
Multilevel Inverter ◽  
Three Phase ◽  
Multi Level ◽  
Simulation Results ◽  
Circuit Configuration

The multilevel inverter is attracting the specialist in medium and high voltage applications, among its types, the cascade H bridge Multi-Level Inverter (MLI), commonly used for high power and high voltage applications. The main advantage of the conventional cascade (MLI) is generated a large number of output voltage levels but it demands a large number of components that produce complexity in the control circuit, and high cost. Along these lines, this paper presents a brief about the non-conventional cascade multilevel topologies that can produce a high number of output voltage levels with the least components. The non-conventional cascade (MLI) in this paper was built to reduce the number of switches, simplify the circuit configuration, uncomplicated control, and minimize the system cost. Besides, it reduces THD and increases efficiency. Two topologies of non-conventional cascade MLI three phase, the Nine level and Seventeen level are presented. The PWM technique is used to control the switches. The simulation results show a better performance for both topologies. THD, the power loss and the efficiency of the two topologies are calculated and drawn to the different values of the Modulation index (ma).

scholarly journals On the Practical Evaluation of the Switching Loss in the Secondary Side Rectifiers of LLC Converters

Energies ◽  
2021 ◽  
Vol 14 (18) ◽  
pp. 5915
Author(s):  
Manuel Escudero ◽  
Matteo-Alessandro Kutschak ◽  
Francesco Pulsinelli ◽  
Noel Rodriguez ◽  
Diego Pedro Morales
Keyword(s):  
Resonant Frequency ◽  
High Voltage ◽  
Low Voltage ◽  
Hysteresis Loss ◽  
Resonant Converters ◽  
Switching Loss ◽  
Operating Modes ◽  
Switching Losses ◽  
Series Resonant ◽  
Secondary Side

The switching loss of the secondary side rectifiers in LLC resonant converters can have a noticeable impact on the overall efficiency of the complete power supply and constrain the upper limit of the optimum switching frequencies of the converter. Two are the main contributions to the switching loss in the secondary side rectifiers: on the one hand, the reverse recovery loss (Qrr), most noticeably while operating above the series resonant frequency; and on the other hand, the output capacitance (Coss) hysteresis loss, not previously reported elsewhere, but present in all the operating modes of the converter (under and above the series resonant frequency). In this paper, a new technique is proposed for the measurement of the switching losses in the rectifiers of the LLC and other isolated converters. Moreover, two new circuits are introduced for the isolation and measurement of the Coss hysteresis loss, which can be applied to both high-voltage and low-voltage semiconductor devices. Finally, the analysis is experimentally demonstrated, characterizing the switching loss of the rectifiers in a 3 kW LLC converter (410 V input to 50 V output). Furthermore, the Coss hysteresis loss of several high-voltage and low-voltage devices is experimentally verified in the newly proposed measurement circuits.

High Voltage AlGaN/GaN Heterojunction Transistors

2004 ◽  
Vol 14 (01) ◽  
pp. 225-243 ◽  
Author(s):  
L. S. McCarthy ◽  
N-Q. Zhang ◽  
H. Xing ◽  
B. Moran ◽  
S. DenBaars ◽  
...  
Keyword(s):  
Drain Current ◽  
Gate Insulator ◽  
Threading Dislocation ◽  
High Electron ◽  
Resistive Load ◽  
Power Switching ◽  
Field Plate ◽  
Switching Power ◽  
Dislocation Densities ◽  
Extrinsic Base

The use of AlGaN / GaN HEMTs and HBTs for switching power supplies is explored. With its high electron velocities and breakdown fields, GaN has great potential for power switching. The field-plate HEMT increased breakdown voltages by 20% to 570V by reducing the peak field at the drain-side edge of the gate. The use of a gate insulator is also investigated, using both JVD SiO 2 and e-beam evaporated SiO 2 to reduce gate leakage, increasing breakdown voltages to 1050V and 1300V respectively. The power device figure of merit (FOM) for these devices: [Formula: see text], is the highest reported for switching devices. To reduce trapping effects, reactively sputtered SiN x, is used as a passivant, resulting in a switching time of less than 30 ns for devices blocking over 110V with a drain current of 1.4A under resistive load conditions. Dynamic load results are also presented. The development of HBTs for switching applications included the development of an etched emitter HBT with a selectively regrown extrinsic base. This was later improved upon with the selectively regrown emitter devices with current gains as high as 15. To improve breakdown in these devices, thick GaN layers were grown, reducing threading dislocation densities in the active layers. A further improvement included the use of a bevelled shallow etch and a lateral collector design to maximize device breakdown.

Efficient Thermal Management for High-voltage Batteries

2020 ◽  
Vol 15 (4) ◽  
pp. 50-53
Author(s):  
Stefan Deser ◽  
Martin Gall ◽  
Stefan Seidl ◽  
Jürgen Hofmann
Keyword(s):  
Thermal Management ◽  
High Voltage

scholarly journals Investigation on the Influence of Gas Pressure on CO2 Arc Characteristics in High-Voltage Gas Circuit Breakers

2017 ◽  
Vol 4 (1) ◽  
pp. 95-98
Author(s):  
Z. Guo ◽  
X. Li ◽  
Y. Zhang ◽  
X. Guo ◽  
J. Xiong
Keyword(s):  
High Voltage ◽  
Power Loss ◽  
Circuit Breaker ◽  
Filling Pressure ◽  
Gas Pressure ◽  
Circuit Breakers ◽  
Promising Alternative ◽  
Arc Model ◽  
Arc Characteristics ◽  
Temperature Distributions

CO<sub>2</sub> is identified as a promising alternative gas of SF<sub>6</sub>. The magnetohydrodynamics (MHD) arc model is established for a CO<sub>2</sub> circuit breaker. The influence of gas pressure is studied. The simulations are carried out for 0.5 MPa, 0.7 MPa and 0.9 MPa absolute filling pressure, allowing predictions of pressure and temperature distributions. The arc time constant θ and the power loss coefficient <em>Q</em> is extracted. The thermal interruption capability is estimated to grow with increasing filling pressure.

Sign in / Sign up

Export Citation Format

Share Document