On-chip aging sensor to monitor NBTI effect in nano-scale SRAM

Author(s):  
A. Ceratti ◽  
T. Copetti ◽  
L. Bolzani ◽  
F. Vargas
Keyword(s):  
2014 ◽  
Vol 6 (9) ◽  
pp. 856-860
Author(s):  
Xiao Fei Kuang ◽  
Chenxu Guo ◽  
Yuhua Cheng ◽  
Hengyi Wang

Nanophotonics ◽  
2013 ◽  
Vol 2 (2) ◽  
pp. 103-130 ◽  
Author(s):  
Stephanie Law ◽  
Viktor Podolskiy ◽  
Daniel Wasserman

AbstractSurface plasmon polaritons and their localized counterparts, surface plasmons, are widely used at visible and near-infrared (near-IR) frequencies to confine, enhance, and manipulate light on the subwavelength scale. At these frequencies, surface plasmons serve as enabling mechanisms for future on-chip communications architectures, high-performance sensors, and high-resolution imaging and lithography systems. Successful implementation of plasmonics-inspired solutions at longer wavelengths, in the mid-infrared (mid-IR) frequency range, would benefit a number of highly important technologies in health- and defense-related fields that include trace-gas detection, heat-signature sensing, mimicking, and cloaking, and source and detector development. However, the body of knowledge of visible/near-IR frequency plasmonics cannot be easily transferred to the mid-IR due to the fundamentally different material response of metals in these two frequency ranges. Therefore, mid-IR plasmonic architectures for subwavelength light manipulation require both new materials and new geometries. In this work we attempt to provide a comprehensive review of recent approaches to realize nano-scale plasmonic devices and structures operating at mid-IR wavelengths. We first discuss the motivation for the development of the field of mid-IR plasmonics and the fundamental differences between plasmonics in the mid-IR and at shorter wavelengths. We then discuss early plasmonics work in the mid-IR using traditional plasmonic metals, illuminating both the impressive results of this work, as well as the challenges arising from the very different behavior of metals in the mid-IR, when compared to shorter wavelengths. Finally, we discuss the potential of new classes of mid-IR plasmonic materials, capable of mimicking the behavior of traditional metals at shorter wavelengths, and allowing for true subwavelength, and ultimately, nano-scale confinement at long wavelengths.


2013 ◽  
Author(s):  
Peng Wang ◽  
Aron Michael ◽  
Chee Yee Kwok

2011 ◽  
Vol 276 ◽  
pp. 117-126 ◽  
Author(s):  
Umesh Bhaskar ◽  
Vikram Passi ◽  
Azeem Zulfiqar ◽  
Ulf Södervall ◽  
Bengt Nilsson ◽  
...  

A simple and versatile on-chip tensile testing method is proposed for the statistical evaluation of size effects on the mechanical strength of silicon thin films along with the simultaneous study of (from low to ultra) strain effects on the carrier transport. Mechanical results are presented on the fracture strength of micro-nano scale silicon beams, followed with a discussion on interface states and problems facing reliable nano-electronic and nano-electromechanical characterizations.


2019 ◽  
Vol 9 (4) ◽  
pp. 802 ◽  
Author(s):  
You-Shin No

Emerging optical technology capable of addressing the limits in modern electronics must incorporate unique solutions to bring about a revolution in high-speed, on-chip data communication and information processing. Among the possible optical devices that can be developed, the electrically driven, ultrasmall semiconductor light source is the most essential element for a compact, power-efficient photonic integrated circuit. In this review, we cover the recent development of the electrically driven light-emitting devices based on various micro- and nano-scale semiconductor optical cavities. We also discuss the recent advances in the integration of these light sources with passive photonic circuits.


2008 ◽  
Vol 1085 ◽  
Author(s):  
Daan Hein Alsem ◽  
Ruben van der Hulst ◽  
Eric A. Stach ◽  
Michael T. Dugger ◽  
Jeff Th. M. de Hosson ◽  
...  

ABSTRACTDynamic friction, wear volumes and wear morphology have been studied for sliding wear in polysilicon in ambient air at μN normal loads using on-chip micron-scale test specimens. With increasing number of wear cycles, the friction coefficients show two distinct types of behavior: (i) an increase by a factor of two and a half to a steady-state regime after peaking at three times the initial value of about 0.10 ± 0.04, with no failure after millions of cycles; (ii) an increase by a factor larger than three followed by failure after ∼105 cycles. Additionally, the average nano-scale wear coefficient sharply increased in the first ∼105 cycles up to about 10−4 and then decayed by an order of magnitude over the course of several million cycles. For both modes of behavior, abrasive wear is the governing mechanism, the difference being attributed to variations in the local surface morphology (and wear debris) between the sliding surfaces. The oxidation of worn polysilicon surfaces only affects the friction coefficient after periods of inactivity (>30 min).


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