High Performance Mixed Signal and RF Circuits Enabled by the Direct Monolithic Heterogeneous Integration of GaN HEMTs and Si CMOS on a Silicon Substrate

2011 ◽  
Author(s):  
T. E. Kazior ◽  
R. Chelakara ◽  
W. Hoke ◽  
J. Bettencourt ◽  
T. Palacios ◽  
...  
Keyword(s):  
Silicon Substrate ◽  
High Performance ◽  
Rf Circuits ◽  
Heterogeneous Integration ◽  
Mixed Signal ◽  
Gan Hemts

High-Performance Low-Leakage-Current AlN/GaN HEMTs Grown on Silicon Substrate

2011 ◽  
Vol 32 (7) ◽  
pp. 874-876 ◽  
Author(s):  
F. Medjdoub ◽  
M. Zegaoui ◽  
D. Ducatteau ◽  
N. Rolland ◽  
P. A. Rolland
Keyword(s):  
Leakage Current ◽  
Silicon Substrate ◽  
High Performance ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Gan Hemts

High-performance InAlN/GaN HEMTs on silicon substrate with high f T × L g

2019 ◽  
Vol 12 (10) ◽  
pp. 104001 ◽  
Author(s):  
Peng Cui ◽  
Andrew Mercante ◽  
Guangyang Lin ◽  
Jie Zhang ◽  
Peng Yao ◽  
...  
Keyword(s):  
Silicon Substrate ◽  
High Performance ◽  
Gan Hemts

scholarly journals 2D MoS2 Encapsulated Silicon Nanopillar Array with High-Performance Light Trapping Obtained by Direct CVD Process

Crystals ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 267
Author(s):  
Minyu Bai ◽  
Zhuoman Wang ◽  
Jijie Zhao ◽  
Shuai Wen ◽  
Peiru Zhang ◽  
...  
Keyword(s):  
Silicon Substrate ◽  
High Performance ◽  
Low Cost ◽  
Light Trapping ◽  
Incident Light ◽  
Single Layer ◽  
Chemical Vapor ◽  
Optoelectronic Device ◽  
Planar Silicon ◽  
Shortwave Infrared

Weak absorption remains a vital factor that limits the application of two-dimensional (2D) materials due to the atomic thickness of those materials. In this work, a direct chemical vapor deposition (CVD) process was applied to achieve 2D MoS2 encapsulation onto the silicon nanopillar array substrate (NPAS). Single-layer 2D MoS2 monocrystal sheets were obtained, and the percentage of the encapsulated surface of NPAS was up to 80%. The reflection and transmittance of incident light of our 2D MoS2-encapsulated silicon substrate within visible to shortwave infrared were significantly reduced compared with the counterpart planar silicon substrate, leading to effective light trapping in NPAS. The proposed method provides a method of conformal deposition upon NPAS that combines the advantages of both 2D MoS2 and its substrate. Furthermore, the method is feasible and low-cost, providing a promising process for high-performance optoelectronic device development.

Enhancement-mode AlGaN/GaN HEMTs on silicon substrate

2006 ◽  
Vol 53 (6) ◽  
pp. 1474-1477 ◽  
Author(s):  
Shuo Jia ◽  
Yong Cai ◽  
Deliang Wang ◽  
Baoshun Zhang ◽  
K.M. Lau ◽  
...  
Keyword(s):  
Silicon Substrate ◽  
Enhancement Mode ◽  
Gan Hemts
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