Study of edge charge trapping in gate oxide caused by FN and hot-carrier injection

2004 ◽  
Author(s):  
Jiayi Huang ◽  
T.P. Chen ◽  
M.S. Tse
Keyword(s):  
Charge Trapping ◽  
Gate Oxide ◽  
Carrier Injection ◽  
Hot Carrier ◽  
Hot Carrier Injection

Effect of substrate hot-carrier injection on quasibreakdown of ultrathin gate oxide

1999 ◽  
Vol 86 (11) ◽  
pp. 6590-6592 ◽  
Author(s):  
Byung Jin Cho ◽  
Zhen Xu ◽  
Hao Guan ◽  
M. F. Li
Keyword(s):  
Gate Oxide ◽  
Carrier Injection ◽  
Hot Carrier ◽  
Hot Carrier Injection

scholarly journals The TDDB Characteristics of Ultra-Thin Gate Oxide MOS Capacitors under Constant Voltage Stress and Substrate Hot-Carrier Injection

2018 ◽  
Vol 2018 ◽  
pp. 1-6
Author(s):  
Jingyu Shen ◽  
Can Tan ◽  
Rui Jiang ◽  
Wei Li ◽  
Xue Fan ◽  
...  
Keyword(s):  
Degradation Mechanism ◽  
Gate Oxide ◽  
Cmos Technology ◽  
Carrier Injection ◽  
Constant Voltage ◽  
Mos Capacitors ◽  
Hot Carrier ◽  
Hot Carrier Injection ◽  
Voltage Stress ◽  
Thin Gate Oxide

The breakdown characteristics of ultra-thin gate oxide MOS capacitors fabricated in 65 nm CMOS technology under constant voltage stress and substrate hot-carrier injection are investigated. Compared to normal thick gate oxide, the degradation mechanism of time-dependent dielectric breakdown (TDDB) of ultra-thin gate oxide is found to be different. It is found that the gate current (Ig) of ultra-thin gate oxide MOS capacitor is more likely to be induced not only by Fowler-Nordheim (F-N) tunneling electrons, but also by electrons surmounting barrier and penetrating electrons in the condition of constant voltage stress. Moreover it is shown that the time to breakdown (tbd) under substrate hot-carrier injection is far less than that under constant voltage stress when the failure criterion is defined as a hard breakdown according to the experimental results. The TDDB mechanism of ultra-thin gate oxide will be detailed. The differences in TDDB characteristics of MOS capacitors induced by constant voltage stress and substrate hot-carrier injection will be also discussed.

A Hot-Carrier Damaged Indicator of MOSFETs by the Low Frequency Noise Measurement Technique

2013 ◽  
Vol 679 ◽  
pp. 89-94
Author(s):  
Shen Li Chen ◽  
Hsiao Kuang Yang
Keyword(s):  
Low Frequency ◽  
Gate Oxide ◽  
Noise Spectrum ◽  
Trap Density ◽  
Interface Trap Density ◽  
Frequency Noise ◽  
Carrier Injection ◽  
Hot Carrier ◽  
Hot Carrier Injection ◽  
Sensitive Tool

In fact, the 1/f noise spectrum is correlated with the interface trap density of a MOSFET gate oxide, and the trap density generation in gate oxide is strong dependently on the hot-carrier injection. In this paper, we will investigate this phenomenon and compare with the threshold voltage shifted measured by the static I-V analysis. Eventually, it is found that the technique of the low frequency 1/f noise spectrum is an accurate and sensitive tool to detect the hot-carrier damage.

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