Atomic Layer Deposition as a New Method for Rare-Earth Doping of Optical Fibers

2007 ◽  
Author(s):  
Lars Norin ◽  
Evgeny Vanin ◽  
Pekka Soininen ◽  
Matti Putkonen
Keyword(s):  
Rare Earth ◽  
Atomic Layer Deposition ◽  
Optical Fibers ◽  
Atomic Layer ◽  
New Method ◽  
Rare Earth Doping ◽  
Layer Deposition

scholarly journals Radiation-induced photoluminescence enhancement of Bi/Al-codoped silica optical fibers via atomic layer deposition

2015 ◽  
Vol 23 (22) ◽  
pp. 29004 ◽  
Author(s):  
Jianxiang Wen ◽  
Wenjun Liu ◽  
Yanhua Dong ◽  
Yanhua Luo ◽  
Gang-ding Peng ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Optical Fibers ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Radiation Induced ◽  
Photoluminescence Enhancement

Hydrophobicity of Rare Earth Oxides Grown by Atomic Layer Deposition

2014 ◽  
Vol 27 (1) ◽  
pp. 148-156 ◽  
Author(s):  
Il-Kwon Oh ◽  
Kangsik Kim ◽  
Zonghoon Lee ◽  
Kyung Yong Ko ◽  
Chang-Wan Lee ◽  
...  
Keyword(s):  
Rare Earth ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Rare Earth Oxides ◽  
Layer Deposition

Rare earth scandate thin films by atomic layer deposition: effect of the rare earth cation size

2010 ◽  
Vol 20 (20) ◽  
pp. 4207 ◽  
Author(s):  
Pia Myllymäki ◽  
Martin Roeckerath ◽  
Joao Marcelo Lopes ◽  
Jürgen Schubert ◽  
Kenichiro Mizohata ◽  
...  
Keyword(s):  
Thin Films ◽  
Rare Earth ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Rare Earth Cation ◽  
Layer Deposition ◽  
Earth Cation ◽  
Deposition Effect ◽  
Cation Size ◽  
The Rare Earth

scholarly journals Ultraviolet Irradiation Effects on luminescent Centres in Bismuth-Doped and Bismuth-Erbium Co-Doped Optical Fibers via Atomic Layer Deposition

Electronics ◽  
2018 ◽  
Vol 7 (10) ◽  
pp. 259 ◽  
Author(s):  
Rahim Uddin ◽  
Jianxiang Wen ◽  
Tao He ◽  
Fufei Pang ◽  
Zhenyi Chen ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Optical Fibers ◽  
Luminescence Intensity ◽  
Ultraviolet Irradiation ◽  
Transmission Loss ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Intensity Changes ◽  
Co Doped

The effects of ultraviolet irradiation on luminescent centres in bismuth-doped (BDF) and bismuth/erbium co-doped (BEDF) optical fibers were examined in this study. The fibers were fabricated by modified chemical vapor deposition combining with atomic layer deposition method. The fibers were exposed to irradiation from a 193 nm pulsed wave argon fluoride laser, and an 830 nm wavelength laser diode pump source was employed for excitation. The experimental results showed that, for the BDF, the transmission loss was slightly reduced and the luminescence intensity was increased at the bismuth-related active aluminum centre (BAC-Al). Then, for the BEDF, the transmission loss was increased a little and the luminescence intensity was also increased at the BAC-Al centre. However, the luminescence intensity was decreased at approximately 1420 nm of the bismuth-related active silica centre (BAC-Si) for all fiber samples. One possible formation mechanism for luminescence intensity changes was probably associated with the valence state transfer of bismuth ions. The other possible mechanism was that the ArF-driven two-photon process caused luminescence changes in BAC-Al and BAC-Si. It was very important to reveal nature of luminescence properties of Bi-doped and Bi/Er co-doped optical fiber.

scholarly journals Harnessing Atomic Layer Deposition and Diffusion to Spatially Localize Rare-Earth Ion Emitters

2020 ◽  
Vol 124 (36) ◽  
pp. 19725-19735
Author(s):  
Alban Ferrier ◽  
Nao Harada ◽  
Marion Scarafagio ◽  
Emrick Briand ◽  
Jean-Jacques Ganem ◽  
...  
Keyword(s):  
Rare Earth ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Rare Earth Ion ◽  
Layer Deposition ◽  
And Diffusion
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