Comparison of Al2O3nano-overlays deposited with magnetron sputtering and atomic layer deposition on optical fibers for sensing purposes

2013 ◽  
Author(s):  
Mateusz Śmietana ◽  
Tomasz Drążewski ◽  
Piotr Firek ◽  
Predrag Mikulic ◽  
Wojtek J. Bock
Keyword(s):  
Atomic Layer Deposition ◽  
Magnetron Sputtering ◽  
Optical Fibers ◽  
Atomic Layer ◽  
Layer Deposition

scholarly journals A promising carbon fiber-based photocatalyst with hierarchical structure for dye degradation

RSC Advances ◽  
2017 ◽  
Vol 7 (36) ◽  
pp. 22234-22242 ◽  
Author(s):  
Chen Gu ◽  
Sen Xiong ◽  
Zhaoxiang Zhong ◽  
Yong Wang ◽  
Weihong Xing
Keyword(s):  
Carbon Fiber ◽  
Atomic Layer Deposition ◽  
Magnetron Sputtering ◽  
Carbon Fibers ◽  
Dye Degradation ◽  
Zno Nanorods ◽  
Pt Nanoparticles ◽  
Atomic Layer ◽  
Dc Magnetron Sputtering ◽  
Layer Deposition

To fabricate a novel photocatalyst, ZnO seeds were uniformly deposited on carbon fibers via atomic layer deposition followed by hydrothermal growth of ZnO nanorods, then Pt nanoparticles were deposited by DC magnetron sputtering.

Characteristics of ZnO Thin Film by Atomic Layer Deposition for Film Bulk Acoustic Resonator

2004 ◽  
Vol 449-452 ◽  
pp. 977-980 ◽  
Author(s):  
S.G. Kim ◽  
Seung Boo Jung ◽  
Ji Hun Oh ◽  
H.J. Kim ◽  
Yong Hyeon Shin
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Magnetron Sputtering ◽  
Atomic Layer ◽  
Rf Magnetron Sputtering ◽  
Acoustic Resonator ◽  
Film Deposition ◽  
Layer Deposition ◽  
Film Bulk Acoustic Resonator ◽  
Film Bulk

Polycrystalline ZnO thin films were for the first time deposited on SiO2/Si (100) substrate using 2-step deposition; atomic layer deposition (ALD) and RF magnetron sputtering, for Film Bulk Acoustic Resonator (FBAR) applications. The film deposition performed in this study was composed of following two procedures; the 1st deposition was using ALD method and 2nd deposition was using RF magnetron sputtering. The ZnO buffer layer ALD films were deposited using alternating diethylzinc (DEZn)/H2O exposures and ultrahigh purity argon gas for purging. Exposure time of 1 sec and purge time of 23 sec yielded an ALD cycle time. Two-step deposited ZnO films revealed stronger c-axis preferred-orientation than one-step deposited. Therefore, this method could be applied to the FBAR applications, since FBAR devices require high quality of thin films.

scholarly journals Radiation-induced photoluminescence enhancement of Bi/Al-codoped silica optical fibers via atomic layer deposition

2015 ◽  
Vol 23 (22) ◽  
pp. 29004 ◽  
Author(s):  
Jianxiang Wen ◽  
Wenjun Liu ◽  
Yanhua Dong ◽  
Yanhua Luo ◽  
Gang-ding Peng ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Optical Fibers ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Radiation Induced ◽  
Photoluminescence Enhancement

VO2 Films Prepared by Atomic Layer Deposition and RF Magnetron Sputtering

2013 ◽  
Vol 58 (10) ◽  
pp. 49-58 ◽  
Author(s):  
M. Tangirala ◽  
K. Zhang ◽  
D. Nminibapiel ◽  
V. Pallem ◽  
C. Dussarrat ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Magnetron Sputtering ◽  
Atomic Layer ◽  
Rf Magnetron Sputtering ◽  
Layer Deposition

scholarly journals Ultraviolet Irradiation Effects on luminescent Centres in Bismuth-Doped and Bismuth-Erbium Co-Doped Optical Fibers via Atomic Layer Deposition

Electronics ◽  
2018 ◽  
Vol 7 (10) ◽  
pp. 259 ◽  
Author(s):  
Rahim Uddin ◽  
Jianxiang Wen ◽  
Tao He ◽  
Fufei Pang ◽  
Zhenyi Chen ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Optical Fibers ◽  
Luminescence Intensity ◽  
Ultraviolet Irradiation ◽  
Transmission Loss ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Intensity Changes ◽  
Co Doped

The effects of ultraviolet irradiation on luminescent centres in bismuth-doped (BDF) and bismuth/erbium co-doped (BEDF) optical fibers were examined in this study. The fibers were fabricated by modified chemical vapor deposition combining with atomic layer deposition method. The fibers were exposed to irradiation from a 193 nm pulsed wave argon fluoride laser, and an 830 nm wavelength laser diode pump source was employed for excitation. The experimental results showed that, for the BDF, the transmission loss was slightly reduced and the luminescence intensity was increased at the bismuth-related active aluminum centre (BAC-Al). Then, for the BEDF, the transmission loss was increased a little and the luminescence intensity was also increased at the BAC-Al centre. However, the luminescence intensity was decreased at approximately 1420 nm of the bismuth-related active silica centre (BAC-Si) for all fiber samples. One possible formation mechanism for luminescence intensity changes was probably associated with the valence state transfer of bismuth ions. The other possible mechanism was that the ArF-driven two-photon process caused luminescence changes in BAC-Al and BAC-Si. It was very important to reveal nature of luminescence properties of Bi-doped and Bi/Er co-doped optical fiber.

Sign in / Sign up

Export Citation Format

Share Document