scholarly journals Ultraviolet Irradiation Effects on luminescent Centres in Bismuth-Doped and Bismuth-Erbium Co-Doped Optical Fibers via Atomic Layer Deposition

Electronics ◽  
2018 ◽  
Vol 7 (10) ◽  
pp. 259 ◽  
Author(s):  
Rahim Uddin ◽  
Jianxiang Wen ◽  
Tao He ◽  
Fufei Pang ◽  
Zhenyi Chen ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Optical Fibers ◽  
Luminescence Intensity ◽  
Ultraviolet Irradiation ◽  
Transmission Loss ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Intensity Changes ◽  
Co Doped

The effects of ultraviolet irradiation on luminescent centres in bismuth-doped (BDF) and bismuth/erbium co-doped (BEDF) optical fibers were examined in this study. The fibers were fabricated by modified chemical vapor deposition combining with atomic layer deposition method. The fibers were exposed to irradiation from a 193 nm pulsed wave argon fluoride laser, and an 830 nm wavelength laser diode pump source was employed for excitation. The experimental results showed that, for the BDF, the transmission loss was slightly reduced and the luminescence intensity was increased at the bismuth-related active aluminum centre (BAC-Al). Then, for the BEDF, the transmission loss was increased a little and the luminescence intensity was also increased at the BAC-Al centre. However, the luminescence intensity was decreased at approximately 1420 nm of the bismuth-related active silica centre (BAC-Si) for all fiber samples. One possible formation mechanism for luminescence intensity changes was probably associated with the valence state transfer of bismuth ions. The other possible mechanism was that the ArF-driven two-photon process caused luminescence changes in BAC-Al and BAC-Si. It was very important to reveal nature of luminescence properties of Bi-doped and Bi/Er co-doped optical fiber.

scholarly journals Influence of the Geometric Parameters on the Deposition Mode in Spatial Atomic Layer Deposition: A Novel Approach to Area-Selective Deposition

Coatings ◽  
2018 ◽  
Vol 9 (1) ◽  
pp. 5 ◽  
Author(s):  
César Masse de la Huerta ◽  
Viet Nguyen ◽  
Jean-Marc Dedulle ◽  
Daniel Bellet ◽  
Carmen Jiménez ◽  
...  
Keyword(s):  
Fluid Dynamics ◽  
Atomic Layer Deposition ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Dynamics Simulation ◽  
Selective Deposition ◽  
Temporal Separation ◽  
Present Contribution ◽  
Chemical Vapor Deposition Growth ◽  
Layer Deposition

Within the materials deposition techniques, Spatial Atomic Layer Deposition (SALD) is gaining momentum since it is a high throughput and low-cost alternative to conventional atomic layer deposition (ALD). SALD relies on a physical separation (rather than temporal separation, as is the case in conventional ALD) of gas-diluted reactants over the surface of the substrate by a region containing an inert gas. Thus, fluid dynamics play a role in SALD since precursor intermixing must be avoided in order to have surface-limited reactions leading to ALD growth, as opposed to chemical vapor deposition growth (CVD). Fluid dynamics in SALD mainly depends on the geometry of the reactor and its components. To quantify and understand the parameters that may influence the deposition of films in SALD, the present contribution describes a Computational Fluid Dynamics simulation that was coupled, using Comsol Multiphysics®, with concentration diffusion and temperature-based surface chemical reactions to evaluate how different parameters influence precursor spatial separation. In particular, we have used the simulation of a close-proximity SALD reactor based on an injector manifold head. We show the effect of certain parameters in our system on the efficiency of the gas separation. Our results show that the injector head-substrate distance (also called deposition gap) needs to be carefully adjusted to prevent precursor intermixing and thus CVD growth. We also demonstrate that hindered flow due to a non-efficient evacuation of the flows through the head leads to precursor intermixing. Finally, we show that precursor intermixing can be used to perform area-selective deposition.

scholarly journals Applications of atomic layer deposition and chemical vapor deposition for perovskite solar cells

2020 ◽  
Vol 13 (7) ◽  
pp. 1997-2023 ◽  
Author(s):  
James A. Raiford ◽  
Solomon T. Oyakhire ◽  
Stacey F. Bent
Keyword(s):  
Solar Cells ◽  
Chemical Vapor Deposition ◽  
Atomic Layer Deposition ◽  
Vapor Deposition ◽  
Perovskite Solar Cells ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Layer Deposition

A review on the versatility of atomic layer deposition and chemical vapor deposition for the fabrication of stable and efficient perovskite solar cells.

Low temperature deposition of 2D WS2 layers from WF6 and H2S precursors: impact of reducing agents

2015 ◽  
Vol 51 (86) ◽  
pp. 15692-15695 ◽  
Author(s):  
A. Delabie ◽  
M. Caymax ◽  
B. Groven ◽  
M. Heyne ◽  
K. Haesevoets ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Reducing Agents ◽  
Layer Deposition ◽  
Temperature Deposition ◽  
The Impact

We demonstrate the impact of reducing agents for Chemical Vapor Deposition (CVD) and Atomic Layer Deposition (ALD) of WS2 from WF6 and H2S precursors.

scholarly journals TiO 2 thin film patterns prepared by chemical vapor deposition and atomic layer deposition using an atmospheric pressure microplasma printer

2019 ◽  
Vol 16 (12) ◽  
pp. 1900127 ◽  
Author(s):  
Morteza Aghaee ◽  
Joerie Verheyen ◽  
Alquin A. E. Stevens ◽  
Wilhelmus M. M. Kessels ◽  
Mariadriana Creatore
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Atomic Layer Deposition ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Layer Deposition

scholarly journals Radiation-induced photoluminescence enhancement of Bi/Al-codoped silica optical fibers via atomic layer deposition

2015 ◽  
Vol 23 (22) ◽  
pp. 29004 ◽  
Author(s):  
Jianxiang Wen ◽  
Wenjun Liu ◽  
Yanhua Dong ◽  
Yanhua Luo ◽  
Gang-ding Peng ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Optical Fibers ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Radiation Induced ◽  
Photoluminescence Enhancement
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