High Resolution Terahertz Spectroscopy of Organic Polycrystalline Thin Films Using a Parallel Metal Plate Waveguide

2007 ◽  
Author(s):  
Joseph S. Melinger ◽  
N. Laman ◽  
S. Sree Harsha ◽  
D. Grischkowsky
Keyword(s):  
Thin Films ◽  
High Resolution ◽  
Terahertz Spectroscopy ◽  
Metal Plate ◽  
Polycrystalline Thin Films

Microstrain distributions in polycrystalline thin films measured by X-ray microdiffraction

2016 ◽  
Vol 49 (2) ◽  
pp. 632-635 ◽  
Author(s):  
N. Schäfer ◽  
G. A. Chahine ◽  
A. J. Wilkinson ◽  
T. Schmid ◽  
T. Rissom ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cell ◽  
High Resolution ◽  
Electron Backscatter Diffraction ◽  
Model System ◽  
X Ray ◽  
Distribution Maps ◽  
Polycrystalline Thin Films ◽  
Electron Backscatter ◽  
Backscatter Diffraction

Microstrain distributions were acquired in functional thin films by high-resolution X-ray microdiffraction measurements, using polycrystalline CuInSe2 thin films as a model system. This technique not only provides spatial resolutions at the submicrometre scale but also allows for analysis of thin films buried within a complete solar-cell stack. The microstrain values within individual CuInSe2 grains were determined to be of the order of 10−4. These values confirmed corresponding microstrain distribution maps obtained on the same CuInSe2 layer by electron backscatter diffraction and Raman microspectroscopy.

Effects of Deposition Temperature and Thermal Treatment on the Structure of C60 and C70 Films

1994 ◽  
Vol 349 ◽  
Author(s):  
I. Rusakova ◽  
A. Hamed ◽  
P.H. Hor
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
High Resolution ◽  
Deposition Temperature ◽  
Room Temperature ◽  
Strong Dependence ◽  
Polycrystalline Thin Films ◽  
Mean Grain Size ◽  
High Resolution Tem ◽  
Solvent Residues

ABSTRACTC60 and C70 polycrystalline thin films, prepared by sublimation of powders onto carbon holey film substrates held at temperatures Ts of 40 and 200 °C, were investigated at room temperature using conventional and high resolution TEM. A strong dependence of grain size on Ts is observed. We obtain a mean grain size ˜25 nm for both C60 and C70 films when using Ts = 40 °C, but this size is ˜250 nm for C60 and ˜130 nm for C70 when using Ts = 200 °C. In all cases, however, an fc.c. structure with a high density of planar defecTs, twins and stacking faulTs, is observed. When a C60 film grown at Ts = 40 °C was annealed for several hours at only about 250 °C in vacuum, recrystallization took place, with grains as large as 250 nm now being present in the film. A condition to observe this recrystallization seems to be that the powder used to grow the film must be dried for long enough periods of time to minimize the amount of solvent residues.

Electron diffraction studies of amorphous and polycrystalline thin films

1990 ◽  
Vol 48 (4) ◽  
pp. 118-119
Author(s):  
D J H Cockayne ◽  
D R McKenzie
Keyword(s):  
Thin Films ◽  
Electron Diffraction ◽  
Polycrystalline Materials ◽  
Good Resolution ◽  
Scattered Intensity ◽  
Radial Density ◽  
X Ray ◽  
Polycrystalline Thin Films ◽  
Nitrogen Ion ◽  
Diffraction Patterns

The study of amorphous and polycrystalline materials by obtaining radial density functions G(r) from X-ray or neutron diffraction patterns is a well-developed technique. We have developed a method for carrying out the same technique using electron diffraction in a standard TEM. It has the advantage that studies can be made of thin films, and on regions of specimen too small for X-ray and neutron studies. As well, it can be used to obtain nearest neighbour distances and coordination numbers from the same region of specimen from which HREM, EDS and EELS data is obtained.The reduction of the scattered intensity I(s) (s = 2sinθ/λ ) to the radial density function, G(r), assumes single and elastic scattering. For good resolution in r, data must be collected to high s. Previous work in this field includes pioneering experiments by Grigson and by Graczyk and Moss. In our work, the electron diffraction pattern from an amorphous or polycrystalline thin film is scanned across the entrance aperture to a PEELS fitted to a conventional TEM, using a ramp applied to the post specimen scan coils. The elastically scattered intensity I(s) is obtained by selecting the elastically scattered electrons with the PEELS, and collecting directly into the MCA. Figure 1 shows examples of I(s) collected from two thin ZrN films, one polycrystalline and one amorphous, prepared by evaporation while under nitrogen ion bombardment.

High resolution terahertz spectroscopy for analytical applications

2020 ◽  
Vol 63 (7) ◽  
pp. 708-720 ◽  
Author(s):  
V L Vaks ◽  
V A Anfertev ◽  
V Yu Balakirev ◽  
S A Basov ◽  
E G Domracheva ◽  
...  
Keyword(s):  
High Resolution ◽  
Terahertz Spectroscopy ◽  
Analytical Applications

Formation of Large, Orientation-Controlled, Nearly Single Crystalline Si Thin Films on SiO2 Using Contact Printing of Rolled and Annealed Nickel Tapes

2003 ◽  
Vol 762 ◽  
Author(s):  
Hwang Huh ◽  
Jung H. Shin
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
High Resolution ◽  
Amorphous Silicon ◽  
Tem Analysis ◽  
Contact Printing ◽  
Single Crystalline ◽  
High Resolution Tem ◽  
Lateral Crystallization ◽  
Si Films

AbstractAmorphous silicon (a-Si) films prepared on oxidized silicon wafer were crystallized to a highly textured form using contact printing of rolled and annealed nickel tapes. Crystallization was achieved by first annealing the a-Si film in contact with patterned Ni tape at 600°C for 20 min in a flowing forming gas (90 % N2, 10 % H2) environment, then removing the Ni tape and further annealing the a-Si film in vacuum for2hrsat600°C. An array of crystalline regions with diameters of up to 20 μm could be formed. Electron microscopy indicates that the regions are essentially single-crystalline except for the presence of twins and/or type A-B formations, and that all regions have the same orientation in all 3 directions even when separated by more than hundreds of microns. High resolution TEM analysis shows that formation of such orientation-controlled, nearly single crystalline regions is due to formation of nearly single crystalline NiSi2 under the point of contact, which then acts as the template for silicide-induced lateral crystallization. Furthermore, the orientation relationship between Si grains and Ni tape is observed to be Si (110) || Ni (001)

Electrical and photoelectrical characterization of GaAsxSy polycrystalline thin films

1997 ◽  
Vol 296 (1-2) ◽  
pp. 114-117 ◽  
Author(s):  
O. Pesty ◽  
P. Canet ◽  
F. Lalande ◽  
H. Carchano ◽  
D. Lollman
Keyword(s):  
Thin Films ◽  
Polycrystalline Thin Films

scholarly journals 4GREAT - a four-color receiver for high-resolution airborne terahertz spectroscopy

2020 ◽  
pp. 1-1
Author(s):  
Carlos Duran ◽  
Christophe Risacher ◽  
Rolf Guesten ◽  
Nicolas Reyes ◽  
Urs Graf ◽  
...  
Keyword(s):  
High Resolution ◽  
Terahertz Spectroscopy

Atomic structure of [0001]-tilt grain boundaries in ZnO:  A high-resolution TEM study of fiber-textured thin films

2004 ◽  
Vol 70 (12) ◽  
Author(s):  
Fumiyasu Oba ◽  
Hiromichi Ohta ◽  
Yukio Sato ◽  
Hideo Hosono ◽  
Takahisa Yamamoto ◽  
...  
Keyword(s):  
Thin Films ◽  
High Resolution ◽  
Grain Boundaries ◽  
Atomic Structure ◽  
High Resolution Tem
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